Acta Physica Sinica - //m.suprmerch.com/ daily 15 2025-01-25 16:28:28 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2025-01-25 16:28:28 zh Copyright ©Acta Physica Sinica All Rights Reserved.  Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[LATTICE VIBRATIONS AND FORCE CONSTANTS OF Cu(100), (111), (110) SURFACES]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.349

We had obtained the semiempirical functions for describing the interaction properties in the ground state of Cu by using the Embedded Atom Method (EAM). In this work, The formula of surface Yorce constants between planes are derived, the force constants between planes of Cu (100), (111) and (110) surfaces are then calculated, which show that the EAM can distinguish the difference of interatomic interactions in the bulk and near the surface, and distinguish the difference of interatomic interactions near different structural surfaces. The calculated force constants lead to good agreement between the projected state densities of surface vibrations calculated by Recursion Method and the experimental results of electron-energy-loss-spectroscopy.


Acta Physica Sinica. 1989 38(3): 349-356. Published 2005-07-08 ]]>

We had obtained the semiempirical functions for describing the interaction properties in the ground state of Cu by using the Embedded Atom Method (EAM). In this work, The formula of surface Yorce constants between planes are derived, the force constants between planes of Cu (100), (111) and (110) surfaces are then calculated, which show that the EAM can distinguish the difference of interatomic interactions in the bulk and near the surface, and distinguish the difference of interatomic interactions near different structural surfaces. The calculated force constants lead to good agreement between the projected state densities of surface vibrations calculated by Recursion Method and the experimental results of electron-energy-loss-spectroscopy.


Acta Physica Sinica. 1989 38(3): 349-356. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 349-356. article doi:10.7498/aps.38.349 10.7498/aps.38.349 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.349 349-356
<![CDATA[A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.357

We have studied the surface relaxation of GaAs (110) with Low-Energy-Electron-Diffra-cion. We find that the best agreemet between theory and experiment is obtained for such a structure in which the As atoms are tilted outward by 0.10±0.02? and the Ga atoms are tilted inward by 0.55±0.02?, with an angle of rotation (ω) of 27.32°±0.24°, keeping the bond length at surface As-Ga unchanged and a Ga to secondlayer spcing d2= 1.45±0.01?and the second-layer Ga to third-layer spcing d3 = 2.01±0.01?. For this structure, the As back bond length lAs =2.43±0.01? (contracted 0.56%) and the Ga back bood length lGa=2.235±0.004?(contracted 8.0%)


Acta Physica Sinica. 1989 38(3): 357-365. Published 2005-07-08 ]]>

We have studied the surface relaxation of GaAs (110) with Low-Energy-Electron-Diffra-cion. We find that the best agreemet between theory and experiment is obtained for such a structure in which the As atoms are tilted outward by 0.10±0.02? and the Ga atoms are tilted inward by 0.55±0.02?, with an angle of rotation (ω) of 27.32°±0.24°, keeping the bond length at surface As-Ga unchanged and a Ga to secondlayer spcing d2= 1.45±0.01?and the second-layer Ga to third-layer spcing d3 = 2.01±0.01?. For this structure, the As back bond length lAs =2.43±0.01? (contracted 0.56%) and the Ga back bood length lGa=2.235±0.004?(contracted 8.0%)


Acta Physica Sinica. 1989 38(3): 357-365. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 357-365. article doi:10.7498/aps.38.357 10.7498/aps.38.357 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.357 357-365
<![CDATA[ELECTRON SUBBANDS AND WAVE FUNCTIONS OF TYPE-Ⅰ AND TYPE-Ⅱ QUASIPERIODIC SEMI- CONDUCTOR SUPERLATTICES]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.366

The envelope function approximation was generalized to calculate the electron subbands and wave functions of quasiperiodic semiconductor superlattices (QSS) within rational approximation, for nonzero K⊥ (the wave vector perpendicular to the axis of the QSS). For K⊥= 0, the electron subbands and wave functions are calculated for InAs/ GaSb QSS up to the generation number m =9 and for GaAs/AlxGa1-xAs QSS up to m = 6. For InAs/GaSb QSS, the influence of valence band states on conduction band state is strong. The dependences of the energies and band widths of electron subbands on K⊥ are obtained for m = 5 and 6. A theoretical method is proposed to calculate the intersubband collective excitations of the type-I QSS by means of the above results.


Acta Physica Sinica. 1989 38(3): 366-375. Published 2005-07-08 ]]>

The envelope function approximation was generalized to calculate the electron subbands and wave functions of quasiperiodic semiconductor superlattices (QSS) within rational approximation, for nonzero K⊥ (the wave vector perpendicular to the axis of the QSS). For K⊥= 0, the electron subbands and wave functions are calculated for InAs/ GaSb QSS up to the generation number m =9 and for GaAs/AlxGa1-xAs QSS up to m = 6. For InAs/GaSb QSS, the influence of valence band states on conduction band state is strong. The dependences of the energies and band widths of electron subbands on K⊥ are obtained for m = 5 and 6. A theoretical method is proposed to calculate the intersubband collective excitations of the type-I QSS by means of the above results.


Acta Physica Sinica. 1989 38(3): 366-375. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 366-375. article doi:10.7498/aps.38.366 10.7498/aps.38.366 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.366 366-375
<![CDATA[CURRENT TRANSPORT MECHENISM IN THERMAL-LYNITRIDED SiO2 THIN FILMS]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.376

A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2×1019-7.2×1020cm-3 and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applied MNOS structure or MIS devices with other traps.


Acta Physica Sinica. 1989 38(3): 376-384. Published 2005-07-08 ]]>

A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2×1019-7.2×1020cm-3 and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applied MNOS structure or MIS devices with other traps.


Acta Physica Sinica. 1989 38(3): 376-384. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 376-384. article doi:10.7498/aps.38.376 10.7498/aps.38.376 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.376 376-384
<![CDATA[SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.385

The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105?) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.


Acta Physica Sinica. 1989 38(3): 385-393. Published 2005-07-08 ]]>

The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105?) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.


Acta Physica Sinica. 1989 38(3): 385-393. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 385-393. article doi:10.7498/aps.38.385 10.7498/aps.38.385 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.385 385-393
<![CDATA[OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.394

The growth behavior during silicon molecular beam epitaxy on Si(lll) is observed by measuring the intensity oscillation of reflection high energy electron diffraction. The oscillation behaves as what is expected with bilayer model. The characteristics of damping and recovery of intensity oscillation during Si molecular beam epitaxy growth on Si(lll) are different from those on Si(100), but are very similar to those during GaAs molecular beam epitaxy growth.


Acta Physica Sinica. 1989 38(3): 394-398. Published 2005-07-08 ]]>

The growth behavior during silicon molecular beam epitaxy on Si(lll) is observed by measuring the intensity oscillation of reflection high energy electron diffraction. The oscillation behaves as what is expected with bilayer model. The characteristics of damping and recovery of intensity oscillation during Si molecular beam epitaxy growth on Si(lll) are different from those on Si(100), but are very similar to those during GaAs molecular beam epitaxy growth.


Acta Physica Sinica. 1989 38(3): 394-398. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 394-398. article doi:10.7498/aps.38.394 10.7498/aps.38.394 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.394 394-398
<![CDATA[THE EFFECT OF LIGHT POLARIZATION ON HIGH ACCURACY MEASUREMENTS OF THIN WIRE DIAMETER]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.399

The effect of light beam polarization on high accuracy measurements of thin wire diameters has been studied. The experimental results are given below in brief. The experimental magnitudes of steel wire diameters vary sinusoidally with the angle between the direction of light vibration and the wire axis. The experimental value obtained with parallel polarization, (i.e., its vibration being parallel to the wire axis) is 0.36 μm smaller than that of the perpendicular, case. The experimental results of steel slit width are contrary to that of steel wires. Based on the experiment, the theoretical analyses of the polarization effect are carried out. Taken into account the influence of light reflection on the wire surface and different phase changes of different vibration directions produced in the reflection, the Fraunhofer diffraction patterns are slightly changed, therefore making the measured values different. According to this idea, the analysis for steel wire shows: the theoretical value of thin wire diameter for light vibration parallel to the wire axis is 0.33μm smaller than that of perpendicular vibration, different from the experimental value 0.36 μm by 0.03 μm. For steel slit width, the measured value with the light vibrations parallel to slit edges is 0.19 μm larger than that of perpendicular case, different from the experimental value 0.21μm by 0.02μm. These differences between theory and experiment are close to or smaller than the error of the measurement system, 0.04 μm. Good coincidencl is achieved.


Acta Physica Sinica. 1989 38(3): 399-406. Published 2005-07-08 ]]>

The effect of light beam polarization on high accuracy measurements of thin wire diameters has been studied. The experimental results are given below in brief. The experimental magnitudes of steel wire diameters vary sinusoidally with the angle between the direction of light vibration and the wire axis. The experimental value obtained with parallel polarization, (i.e., its vibration being parallel to the wire axis) is 0.36 μm smaller than that of the perpendicular, case. The experimental results of steel slit width are contrary to that of steel wires. Based on the experiment, the theoretical analyses of the polarization effect are carried out. Taken into account the influence of light reflection on the wire surface and different phase changes of different vibration directions produced in the reflection, the Fraunhofer diffraction patterns are slightly changed, therefore making the measured values different. According to this idea, the analysis for steel wire shows: the theoretical value of thin wire diameter for light vibration parallel to the wire axis is 0.33μm smaller than that of perpendicular vibration, different from the experimental value 0.36 μm by 0.03 μm. For steel slit width, the measured value with the light vibrations parallel to slit edges is 0.19 μm larger than that of perpendicular case, different from the experimental value 0.21μm by 0.02μm. These differences between theory and experiment are close to or smaller than the error of the measurement system, 0.04 μm. Good coincidencl is achieved.


Acta Physica Sinica. 1989 38(3): 399-406. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 399-406. article doi:10.7498/aps.38.399 10.7498/aps.38.399 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.399 399-406
<![CDATA[NODAL-CURVE OF MATRIX ELEMENT FOR GENERALIZED OSCILLATOR STRENGTH DENSITY]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.407

Generalized oscillator strength density from an initial atomic state nl to final states n'l' or ∈'l' forming a final channel is a function of the energy transfer ∈ and the momentum transfer q. We report our study on the nodal curves in the ∈-q plane, where the matrix element for the generalized oscillator strength density vanishes. For high momentum transfer, the positions of the nodal curves can be obtained by scaling the hydrogenic results. For low momentum transfer, the nodal curves depend strongly on the difference of the quantum defects △μ of the initial and final channels; the topology of the nodal curves for △μ>0 is completely different from the topology for △μ<0.


Acta Physica Sinica. 1989 38(3): 407-413. Published 2005-07-08 ]]>

Generalized oscillator strength density from an initial atomic state nl to final states n'l' or ∈'l' forming a final channel is a function of the energy transfer ∈ and the momentum transfer q. We report our study on the nodal curves in the ∈-q plane, where the matrix element for the generalized oscillator strength density vanishes. For high momentum transfer, the positions of the nodal curves can be obtained by scaling the hydrogenic results. For low momentum transfer, the nodal curves depend strongly on the difference of the quantum defects △μ of the initial and final channels; the topology of the nodal curves for △μ>0 is completely different from the topology for △μ<0.


Acta Physica Sinica. 1989 38(3): 407-413. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 407-413. article doi:10.7498/aps.38.407 10.7498/aps.38.407 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.407 407-413
<![CDATA[UNSTABLE REGION AND BIFURCATIONS AND CHAOS IN SINGLE-MODE BISTABLE OPTICAL SYSTEMS]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.414

Based on the instability criterion of semi-classical Maxwell -Bloch equations of single-mode optical systems, the global distribution of instability region is depicted in △-θ parameter space (△ detuning of the atoms, θ mistuning of the cavity). In the instability region predicted, various bifurcations and chaos are disclosed. We find that chaos may appear in both upper and lower branches of one bistable curve Moreover, a new time-dependent solution coexisting with the stable stationary solution is found.


Acta Physica Sinica. 1989 38(3): 414-421. Published 2005-07-08 ]]>

Based on the instability criterion of semi-classical Maxwell -Bloch equations of single-mode optical systems, the global distribution of instability region is depicted in △-θ parameter space (△ detuning of the atoms, θ mistuning of the cavity). In the instability region predicted, various bifurcations and chaos are disclosed. We find that chaos may appear in both upper and lower branches of one bistable curve Moreover, a new time-dependent solution coexisting with the stable stationary solution is found.


Acta Physica Sinica. 1989 38(3): 414-421. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 414-421. article doi:10.7498/aps.38.414 10.7498/aps.38.414 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.414 414-421
<![CDATA[TRANSFER FUNCTION THEORY FOR FLUORESCENCE DYNAMICS]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.422

In order to characterize the dynamical properties of a fluorescence system under weak excitation regime, flurescence response function and fluorescence transfer function are introduced. Based on these concepts a new theoretical representation of fluorescence dynamics is established. It is then applied to the discussion of some important problems. The results show that the new theory provides an effective method for describing systematically the fluorescence dynamics of complex systems, in which the energy transfer processes take place.


Acta Physica Sinica. 1989 38(3): 422-429. Published 2005-07-08 ]]>

In order to characterize the dynamical properties of a fluorescence system under weak excitation regime, flurescence response function and fluorescence transfer function are introduced. Based on these concepts a new theoretical representation of fluorescence dynamics is established. It is then applied to the discussion of some important problems. The results show that the new theory provides an effective method for describing systematically the fluorescence dynamics of complex systems, in which the energy transfer processes take place.


Acta Physica Sinica. 1989 38(3): 422-429. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 422-429. article doi:10.7498/aps.38.422 10.7498/aps.38.422 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.422 422-429
<![CDATA[TRANSFER CHARACTERISTICS OF NONRADIATIVE ENERGY FROM Tb3+ TO Ce3+ IN YTTRIUM GALLIUM GARNETS]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.430

Selection-excited spectra and fluorescence lifetimes of Tb3+ and Ce3+ ions in yttrium gallium garnets are obtained at room temperature. In Y3Ga5O12:Tb, Ce, Tb3+ (donor) emission spectrum and Ce3+( acceptor) excitation spectrum overlaps considerably. The observed fluorescence lifetimes of Tb3+ 5D3 and 5D4 levels decrease with Ce3+ concentration when the sample of Y3Ga5O12: Tb, Ce are excited by UV laser pulse. The mechanisms for nonradiative energy transfer from 5D3 and 5D4 states of Tb3+ to 2D3/2 state of Ce3+ are found to be electric dipole-dipole interaction. The critical distance, rate and efficiency of energy transfer from Tb3+ to Ce3+ ion are obtained. The average critical transfer distance (R0) for 5D3 and 5D4(Tb3+)→2D3/2(Ce3+) are 16.3 ? and 11.2 ?, respectively. Although the energy transfer from the 5D4 state is dominated by dipole-dipole interaction, the dipole-quadrupole interaction must also be considered.


Acta Physica Sinica. 1989 38(3): 430-438. Published 2005-07-08 ]]>

Selection-excited spectra and fluorescence lifetimes of Tb3+ and Ce3+ ions in yttrium gallium garnets are obtained at room temperature. In Y3Ga5O12:Tb, Ce, Tb3+ (donor) emission spectrum and Ce3+( acceptor) excitation spectrum overlaps considerably. The observed fluorescence lifetimes of Tb3+ 5D3 and 5D4 levels decrease with Ce3+ concentration when the sample of Y3Ga5O12: Tb, Ce are excited by UV laser pulse. The mechanisms for nonradiative energy transfer from 5D3 and 5D4 states of Tb3+ to 2D3/2 state of Ce3+ are found to be electric dipole-dipole interaction. The critical distance, rate and efficiency of energy transfer from Tb3+ to Ce3+ ion are obtained. The average critical transfer distance (R0) for 5D3 and 5D4(Tb3+)→2D3/2(Ce3+) are 16.3 ? and 11.2 ?, respectively. Although the energy transfer from the 5D4 state is dominated by dipole-dipole interaction, the dipole-quadrupole interaction must also be considered.


Acta Physica Sinica. 1989 38(3): 430-438. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 430-438. article doi:10.7498/aps.38.430 10.7498/aps.38.430 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.430 430-438
<![CDATA[A STUDY ON DEMAGNETIZATION PROCESS AND COERCIV-ITY MECHANISM IN ORIENTED SINTERED Nd-Fe-B PERMANENT ALLOY]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.439

The four stages of the demagnetization process of oriented sintered Nd-Fe-B alloy after saturation magnetizing along easy direction is studied theoretically in this paper. The results indicate that the nucleation in the soft magnetization regions located at the surface of hard magnetic grains, as well as the irreversible domain wall displacement from the surface to the inside of grains are the dominant factors controlling the intrinsic coercivity of Nd-Fe-B alloy. The rapid reduction of coercivity of Nd-Fe-B alloy with temperature rising are mainly attributed to the thermal movement of atoms it has a harmful effect on the perfection of tetragonal structure in hard magnetic grains and increases the thickness of the soft magnetization transition regions.


Acta Physica Sinica. 1989 38(3): 439-448. Published 2005-07-08 ]]>

The four stages of the demagnetization process of oriented sintered Nd-Fe-B alloy after saturation magnetizing along easy direction is studied theoretically in this paper. The results indicate that the nucleation in the soft magnetization regions located at the surface of hard magnetic grains, as well as the irreversible domain wall displacement from the surface to the inside of grains are the dominant factors controlling the intrinsic coercivity of Nd-Fe-B alloy. The rapid reduction of coercivity of Nd-Fe-B alloy with temperature rising are mainly attributed to the thermal movement of atoms it has a harmful effect on the perfection of tetragonal structure in hard magnetic grains and increases the thickness of the soft magnetization transition regions.


Acta Physica Sinica. 1989 38(3): 439-448. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 439-448. article doi:10.7498/aps.38.439 10.7498/aps.38.439 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.439 439-448
<![CDATA[THE UNIVERSAL DISPERSION EQUATIONS OF MSFVW AND MSBVW IN ARBITRARY MULTILAYER MAGNETIC STRUCTURE]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.449

In this paper, we study the regularity that the dispersion equation of MSFVW; in a magnetic anisotropy multilayer structure with finite width varies periodically with the number of magnetic layers increasing. After introducing three self-defined functions, the universal dispersion equation of MSFVW in an arbitrary multilayer magnetic structure is obtained Using similar procedure, a universal dispersion equation of MSBVW in the multilayer struc-ture has also been derived.


Acta Physica Sinica. 1989 38(3): 449-457. Published 2005-07-08 ]]>

In this paper, we study the regularity that the dispersion equation of MSFVW; in a magnetic anisotropy multilayer structure with finite width varies periodically with the number of magnetic layers increasing. After introducing three self-defined functions, the universal dispersion equation of MSFVW in an arbitrary multilayer magnetic structure is obtained Using similar procedure, a universal dispersion equation of MSBVW in the multilayer struc-ture has also been derived.


Acta Physica Sinica. 1989 38(3): 449-457. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 449-457. article doi:10.7498/aps.38.449 10.7498/aps.38.449 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.449 449-457
<![CDATA[STUDY ON THE INSERTION OF HIGH-VALENCE CATIONS INTO LAYERED CATHODE]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.458

The study on solid electrochemistry of insertion of high-valence cations such as Mg2+, Zn2+ etc. into the layered material such as V2O5, MoS2 is carried out. The insertion compounds are investigated by a lot of physical techniques such as XRD, EMP, ESR. The mechanism of insertion is disscussed.


Acta Physica Sinica. 1989 38(3): 458-465. Published 2005-07-08 ]]>

The study on solid electrochemistry of insertion of high-valence cations such as Mg2+, Zn2+ etc. into the layered material such as V2O5, MoS2 is carried out. The insertion compounds are investigated by a lot of physical techniques such as XRD, EMP, ESR. The mechanism of insertion is disscussed.


Acta Physica Sinica. 1989 38(3): 458-465. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 458-465. article doi:10.7498/aps.38.458 10.7498/aps.38.458 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.458 458-465
<![CDATA[REAL-TIME COMPENSATION OF ATMOSPHERIC TURBULEN- CE BY NONLINEAR OPTICAL PHASE CONJUAGTION]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.466

A theory of compensating atmospheric turbulence by optical phase conjugation is developed basing on the transmission theory of monochromatic scalar wave through atmosphere and the first Born approximation. It is shown, under the conditions of the nonabsorbing atmosphere and a infinite phase conjugate mirror, that atmospheric turbulence can be corrected thoroughly. Our experiment demonstrated that optical phase conjugate wave generated by SBS can real-time restore the initial optical field.


Acta Physica Sinica. 1989 38(3): 466-470. Published 2005-07-08 ]]>

A theory of compensating atmospheric turbulence by optical phase conjugation is developed basing on the transmission theory of monochromatic scalar wave through atmosphere and the first Born approximation. It is shown, under the conditions of the nonabsorbing atmosphere and a infinite phase conjugate mirror, that atmospheric turbulence can be corrected thoroughly. Our experiment demonstrated that optical phase conjugate wave generated by SBS can real-time restore the initial optical field.


Acta Physica Sinica. 1989 38(3): 466-470. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 466-470. article doi:10.7498/aps.38.466 10.7498/aps.38.466 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.466 466-470
<![CDATA[SUBHARMONIC SHORT LASER PULSE AND SINGLE MODE BEHAVIOR OF SEMICONDUCTOR LASERS UNDER IGH SPEED LARGE SINUSOIDAL ODULATION]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.471

The output characteristics of semiconductor lasers under high speed large sinusoidal modulation have been analyzed numerically by means of a system of multilongitudinal-mode rate equations. It is shown that with different modulation parameters, the output may contain a regular pulse series,exhibit spectral widening and spectral shift, and under some adequate modulation conditions, 2-or multi-subharmonic short laser pulse of less than 10 ps may appear, and may be of single mode. A qualitative interpretation is given to some of these phenomena.


Acta Physica Sinica. 1989 38(3): 471-475. Published 2005-07-08 ]]>

The output characteristics of semiconductor lasers under high speed large sinusoidal modulation have been analyzed numerically by means of a system of multilongitudinal-mode rate equations. It is shown that with different modulation parameters, the output may contain a regular pulse series,exhibit spectral widening and spectral shift, and under some adequate modulation conditions, 2-or multi-subharmonic short laser pulse of less than 10 ps may appear, and may be of single mode. A qualitative interpretation is given to some of these phenomena.


Acta Physica Sinica. 1989 38(3): 471-475. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 471-475. article doi:10.7498/aps.38.471 10.7498/aps.38.471 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.471 471-475
<![CDATA[REDUCTION OF QUANTUM NOISE BY PHOTON CORRELATION]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.476

In this paper, the quantum theory of the measurement of the intensity difference between two light beams is analysed. The quantum noise can be reduced by increasing the photon correlation between two beams. For anti-Cauchy-Schwarz light, another type of nonclassical radiation fields, this quantum noise can be reduced to a level below the classical limit. The sub-shot noise may occur in DFWM between the conjugate wave and the transmit wave.


Acta Physica Sinica. 1989 38(3): 476-480. Published 2005-07-08 ]]>

In this paper, the quantum theory of the measurement of the intensity difference between two light beams is analysed. The quantum noise can be reduced by increasing the photon correlation between two beams. For anti-Cauchy-Schwarz light, another type of nonclassical radiation fields, this quantum noise can be reduced to a level below the classical limit. The sub-shot noise may occur in DFWM between the conjugate wave and the transmit wave.


Acta Physica Sinica. 1989 38(3): 476-480. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 476-480. article doi:10.7498/aps.38.476 10.7498/aps.38.476 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.476 476-480
<![CDATA[LEVEL STRUCTURE OF THE RYDBERG STATES OF CALCIUM ATOM IN ELECTRIC FIELD]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.481

The Stark spectrum of Ca atom with m = 0 in the vicinity of n = 10 to n = 13 have been obtained by using two-step excitation and photoionization methods in the applied electric field from 0 to 8 kV/cm. The experimental results show that the 3d2 3P0 and 3d2 3P2 valence states are repelled by n= 12 Stark manifold. The interaction among the zero-field non-degenerate states, valence states and Stark states are discussed. The interference phenomenon, in which valence state and Stark states take part, has been observed. The interference is enhanced when the electric field increase.


Acta Physica Sinica. 1989 38(3): 481-486. Published 2005-07-08 ]]>

The Stark spectrum of Ca atom with m = 0 in the vicinity of n = 10 to n = 13 have been obtained by using two-step excitation and photoionization methods in the applied electric field from 0 to 8 kV/cm. The experimental results show that the 3d2 3P0 and 3d2 3P2 valence states are repelled by n= 12 Stark manifold. The interaction among the zero-field non-degenerate states, valence states and Stark states are discussed. The interference phenomenon, in which valence state and Stark states take part, has been observed. The interference is enhanced when the electric field increase.


Acta Physica Sinica. 1989 38(3): 481-486. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 481-486. article doi:10.7498/aps.38.481 10.7498/aps.38.481 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.481 481-486
<![CDATA[MEASUREMENT FOR THE HIGH EXCITED SPECTRA OF ATOMIC SAMARIUM BY USING STEPWISE LASER EXCITATION METHOD]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.487

We report the method for selecting the high excited states from the complex photoionizing spectra. Thirty energy levels of Sm near the ionization limit have been measured.


Acta Physica Sinica. 1989 38(3): 487-491. Published 2005-07-08 ]]>

We report the method for selecting the high excited states from the complex photoionizing spectra. Thirty energy levels of Sm near the ionization limit have been measured.


Acta Physica Sinica. 1989 38(3): 487-491. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 487-491. article doi:10.7498/aps.38.487 10.7498/aps.38.487 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.487 487-491
<![CDATA[INVERSE DIELECTRIC FUNCTION AND FAST ELECTRON ENERGY-LOSS-SPECTRUM OF SEMICONDUCTOR SUPERLATTICES]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.492

The inverse dielectric function of semiconductor superlattices is derived with inclusion of tunneling effects between adjacent quantum wells. The result is, then, used to evaluate the fast electron energy-loss-spotrum with the conclusion that tunneling effect tend to enhance the energy loss in superlattices.


Acta Physica Sinica. 1989 38(3): 492-496. Published 2005-07-08 ]]>

The inverse dielectric function of semiconductor superlattices is derived with inclusion of tunneling effects between adjacent quantum wells. The result is, then, used to evaluate the fast electron energy-loss-spotrum with the conclusion that tunneling effect tend to enhance the energy loss in superlattices.


Acta Physica Sinica. 1989 38(3): 492-496. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 492-496. article doi:10.7498/aps.38.492 10.7498/aps.38.492 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.492 492-496
<![CDATA[THE UPPER LIMIT OF CRITICAL TEMPERATURE OF N DIMENSIONAL ISING MODEL]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.497

In the present article, by using coupling technique, we establish the relation between Ising model and contact process. From this relation, the upper limit of critical temperature of higher dimensional Ising model is obtained. That is, the critical point βc(n) of n-dimensional Ising model must satisfy exp{2βc(n)(2n-1)}·(exp{2βc(n)}-1)≥2/2n-1 and especially, crirical point βc(3) of the three-dimensional Ising model must satisfy βc(3)> 1/2ln1.17.


Acta Physica Sinica. 1989 38(3): 497-501. Published 2005-07-08 ]]>

In the present article, by using coupling technique, we establish the relation between Ising model and contact process. From this relation, the upper limit of critical temperature of higher dimensional Ising model is obtained. That is, the critical point βc(n) of n-dimensional Ising model must satisfy exp{2βc(n)(2n-1)}·(exp{2βc(n)}-1)≥2/2n-1 and especially, crirical point βc(3) of the three-dimensional Ising model must satisfy βc(3)> 1/2ln1.17.


Acta Physica Sinica. 1989 38(3): 497-501. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 497-501. article doi:10.7498/aps.38.497 10.7498/aps.38.497 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.497 497-501
<![CDATA[THE UTILIZATION OF INCOMPLETE PSEUDO-KOSSEL LINES IN CRYSTAL DIFFRACTION]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.502

The great number of incomplete pseudo-Kossel lines, which can not be avoided and are normally useless in divergent-beam X-ray diffraction, can be used for obtaining the information about interplanar spacings, inclination angles of diffraction planes and the film shifts in multiple exposures with the dual-element radiation method. Therefore, those problems such as the identification of diffraction indices, the determination of crystal orientation and the precise measurement of lattice constants etc. can be solved by the use of diffraction patterns in one experiment.


Acta Physica Sinica. 1989 38(3): 502-507. Published 2005-07-08 ]]>

The great number of incomplete pseudo-Kossel lines, which can not be avoided and are normally useless in divergent-beam X-ray diffraction, can be used for obtaining the information about interplanar spacings, inclination angles of diffraction planes and the film shifts in multiple exposures with the dual-element radiation method. Therefore, those problems such as the identification of diffraction indices, the determination of crystal orientation and the precise measurement of lattice constants etc. can be solved by the use of diffraction patterns in one experiment.


Acta Physica Sinica. 1989 38(3): 502-507. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 502-507. article doi:10.7498/aps.38.502 10.7498/aps.38.502 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.502 502-507
<![CDATA[HIGH RESOLUTION ELECTRON MICROSCOPY STUDY ON HIGH Tc SUPERCONDUCTOR Nd-Ba-Cu-O]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.508

Nd-Ba-Cu-O high Tc superconductor is studied with electron diffraction and high resolution electron microscopy. The main phase is orthrombic with distorted perovskite structure. The lattice parameters are a = 3.84?, b = 3.87?, c= 11.7?. There are many defects in the sample. Edge dislocations and anti-phase domains are observed by lattice imaging. The structure mode) of NdBa2Cu3O7-δ is determined from the structure image. Depending on the imaging conditions either the heavy atoms or oxygen atoms appear as white dots in the high resolution electron microscope images. The oxygen atoms can be distinguished from the vacancies in the image under a suitable imaging condition.


Acta Physica Sinica. 1989 38(3): 508-510. Published 2005-07-08 ]]>

Nd-Ba-Cu-O high Tc superconductor is studied with electron diffraction and high resolution electron microscopy. The main phase is orthrombic with distorted perovskite structure. The lattice parameters are a = 3.84?, b = 3.87?, c= 11.7?. There are many defects in the sample. Edge dislocations and anti-phase domains are observed by lattice imaging. The structure mode) of NdBa2Cu3O7-δ is determined from the structure image. Depending on the imaging conditions either the heavy atoms or oxygen atoms appear as white dots in the high resolution electron microscope images. The oxygen atoms can be distinguished from the vacancies in the image under a suitable imaging condition.


Acta Physica Sinica. 1989 38(3): 508-510. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 508-510. article doi:10.7498/aps.38.508 10.7498/aps.38.508 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.508 508-510
<![CDATA[TRANSPORT PROPERTIES OF TETRAGONAL AND ORTHOR- HOMBIC PHASE IN YBa2Cu3O7-x SYSTEM]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.511

The resistance and thermoelectric power were measured for a series of single phase YBa2 Cu3O7-x samples with different quenching temperature. The relation between the thermopower and temperature indicates that there exists a phonon-drag peak in orthorhombic phase sample. The peak disappears in tetragonal phase sample. This phenomeron suggests that the electron-phonon interaction influences the superconduc tivity of YBa2 Cu3O7-x. According to the experimental data of thermoelectric power, estimation for the Fermi energy and carrier concentration of the sample are made.


Acta Physica Sinica. 1989 38(3): 511-515. Published 2005-07-08 ]]>

The resistance and thermoelectric power were measured for a series of single phase YBa2 Cu3O7-x samples with different quenching temperature. The relation between the thermopower and temperature indicates that there exists a phonon-drag peak in orthorhombic phase sample. The peak disappears in tetragonal phase sample. This phenomeron suggests that the electron-phonon interaction influences the superconduc tivity of YBa2 Cu3O7-x. According to the experimental data of thermoelectric power, estimation for the Fermi energy and carrier concentration of the sample are made.


Acta Physica Sinica. 1989 38(3): 511-515. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 511-515. article doi:10.7498/aps.38.511 10.7498/aps.38.511 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.511 511-515
<![CDATA[A STUDY ON IMAGE QUALITY DEPENDING ON DEFOCUSING HREM WITH IMAGE QUALIFICATION THEORY OF LINFOOT]]> //m.suprmerch.com/en/article/doi/10.7498/aps.38.516

Using image qualification theory of Linfoot, we studied the deforcusing character of imaging of weak phase object in HREM. The power spectrum of electron micrographs of an amorphous carbon thin foil specimen of 10 μm thick is measured from which the distribution of the relative structral content is determined. It is further verified by numerical analysis. The correlation factor, the image fidelity, the choice of the defocus amount in the electron microscope for the unkown crystal objects and automatic focusing is discussed.


Acta Physica Sinica. 1989 38(3): 516-522. Published 2005-07-08 ]]>

Using image qualification theory of Linfoot, we studied the deforcusing character of imaging of weak phase object in HREM. The power spectrum of electron micrographs of an amorphous carbon thin foil specimen of 10 μm thick is measured from which the distribution of the relative structral content is determined. It is further verified by numerical analysis. The correlation factor, the image fidelity, the choice of the defocus amount in the electron microscope for the unkown crystal objects and automatic focusing is discussed.


Acta Physica Sinica. 1989 38(3): 516-522. Published 2005-07-08 ]]>
1989-02-05T00:00:00+00:00 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(3): 516-522. article doi:10.7498/aps.38.516 10.7498/aps.38.516 Acta Physica Sinica 38 3 2005-07-08 //m.suprmerch.com/en/article/doi/10.7498/aps.38.516 516-522