The P- and S- wave π-π scattering amplitudes are obtained by the Tamm-Dancoff method from the following interaction Lagrangian The P- wave solution is identical with that obtained by Frazer and Fulco, and the resonance behavior of the S- wave is found to be more complicate than the P- wave solution.
The P- and S- wave π-π scattering amplitudes are obtained by the Tamm-Dancoff method from the following interaction Lagrangian The P- wave solution is identical with that obtained by Frazer and Fulco, and the resonance behavior of the S- wave is found to be more complicate than the P- wave solution.
By using the fact that the properties of differential cross section, are invariant under the rotation of total spin, the ambiguity in assigning phase shift of the nucleon-deuteron scattering is discussed. The Minami transformation for the nucleon-deuteron scattering has been given.
By using the fact that the properties of differential cross section, are invariant under the rotation of total spin, the ambiguity in assigning phase shift of the nucleon-deuteron scattering is discussed. The Minami transformation for the nucleon-deuteron scattering has been given.
A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the collector conductance introduced by base width modulation plays an important role in limiting the maximum frequency of oscillation of the transistor. The connection between the maximum frequency of oscillation of drift transistor and its external parameters is discussed finally. It is concluded that when proper corrections are made for drift transistors, not only fTd, rb, and Cc, but also the magnitude of drift field in the base region of drift transistors can be deduced.
A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the collector conductance introduced by base width modulation plays an important role in limiting the maximum frequency of oscillation of the transistor. The connection between the maximum frequency of oscillation of drift transistor and its external parameters is discussed finally. It is concluded that when proper corrections are made for drift transistors, not only fTd, rb, and Cc, but also the magnitude of drift field in the base region of drift transistors can be deduced.
The difference in the form of Cadmium sulphide single crystals grown under various temperature range is discussed and ascribed to the different temperature dependence of the growth velocities of three principal crystal faces. This difference is explained by the equilibrium properties of the crystal face structure.
The difference in the form of Cadmium sulphide single crystals grown under various temperature range is discussed and ascribed to the different temperature dependence of the growth velocities of three principal crystal faces. This difference is explained by the equilibrium properties of the crystal face structure.
The ratio of the probability of two capture processes of stopped negative pions in hydrogen was measured by the γ-γ coincidence method. The experimental result is equal to 1.40 ±0.08. This value agrees with the datum on photoproduction and scattering of pions.
The ratio of the probability of two capture processes of stopped negative pions in hydrogen was measured by the γ-γ coincidence method. The experimental result is equal to 1.40 ±0.08. This value agrees with the datum on photoproduction and scattering of pions.