Recent progress in optoelectronic memristive devices for in-sensor computing

Shan Xuan-Yu; Wang Zhong-Qiang; Xie Jun; Zheng Jia-Hui; Xu Hai-Yang; Liu Yi-Chun

doi:10.7498/aps.71.20220350

Abstract

Neuromorphic computing system, inspired by human brain, has the capability of breaking through the bottlenecks of conventional von Neumann architecture, which can improve the energy efficiency of data processing. Novel neuromorphic electronic components are the hardware foundation of efficient neuromorphic computation. Optoelectronic memristive device integrates the functions of sensing, memorizing and computing and is considered as a promising hardware candidate for neuromorphic vision. Herein, the recent research progress of optoelectronic memristive device for in-sensor computing are reviewed, including optoelectronic materials and mechanism, optoelectronic memristive device/characteristics as well as functionality and application of in-sensor computing. We first review the optoelectronic materials and corresponding memristive mechanism, including photon-ion coupling and photon-electron coupling type. Then optoelelctronic and all-optical modulated memristive device are introduced according to the modulation mode. Moreover, we exhibit the applications of optoelectronic device in cognitive function simulation, optoelectronic logic operation, neuromorphic vision, object tracking, etc. Finally, we summarize the advantages/challenges of optoelectronic memristor and prospect the future development.

Keywords:

Authors and contacts

1.
Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
2.
National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China

Corresponding author: Wang Zhong-Qiang, wangzq752@nenu.edu.cn

Funds: Project supported by the fund from the Ministry of Science and Technology of China (Grant No. 2018YFE0118300) and the National Natural Science Foundation of China (Grant Nos. 11974072, U19A2091).

FullText HTML : translate this paragraph

References

[1]	Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252 Google Scholar
[2]	Lee J, Lu W D 2018 Adv. Mater. 30 1702770 Google Scholar
[3]	Cheng Z G, Rios C, Pernice W H P, Wright C D, Bhaskaran H 2017 Sci. Adv. 3 e1700160 Google Scholar
[4]	Xu W T, Cho H, Kim Y H, Kim Y T, Wolf C, Park C G, Lee T W 2016 Adv. Mater. 28 5916 Google Scholar
[5]	Gholipour B, Bastock P, Craig C, Khan K, Hewak D, Soci C 2015 Adv. Optical Mater. 3 635 Google Scholar
[6]	Mao J Y, Zhou L, Zhu X, Zhou Y, HanS T 2019 Adv. Optical Mater. 7 1900766 Google Scholar
[7]	Chua L 1971 IEEE Trans. Circuit Theory 18 507 Google Scholar
[8]	Wang Z, Zeng T, Ren Y, Lin Y, Xu H, Zhao X, Liu Y, Ielmini D 2020 Nat. Commun. 11 1510 Google Scholar
[9]	Jo S, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297 Google Scholar
[10]	Sun L F, Wang Z R, Jiang J, Kim Y, Joo B, Zheng S, Lee S, Yu W J, Kong B S, Yang H 2021 Sci. Adv. 7 eabg1455 Google Scholar
[11]	Lin Y, Zhang X, Shan X, Zeng T, Zhao X, Wang Z, Kang Z, Xu H, Liu Y 2020 J. Mater. Chem. C 8 14789 Google Scholar
[12]	Kim S J, Kim S B, Jang H W 2021 Iscience 24 101889 Google Scholar
[13]	Milo V, Malavena G, Monzio Compagnoni C, Ielmini D 2020 Material 13 166 Google Scholar
[14]	Tan H, Liu G, Yang H, Yi X, Pan L, Shang J, Long S, Liu M, Wu Y, Li R 2017 ACS Nano 11 11298 Google Scholar
[15]	Gao S, Liu G, Yang H L, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J, Li R 2019 ACS Nano 13 2634 Google Scholar
[16]	Zhao X, Wang Z, Xie Y, Xu H, Zhu J, Zhang X, Liu W, Yang G, Ma J, Liu Y 2018 Small 14 1801325 Google Scholar
[17]	Jaafar A H, Gray R J, Verrelli E, O’Neill M, Kelly S M, Kemp N T 2017 Nanoscale 9 17091 Google Scholar
[18]	Zhao X, Wang Z, Li W, Sun S, Xu H, Zhou P, Xu J, Lin Y, Liu Y 2020 Adv. Funct. Mater. 30 1910151 Google Scholar
[19]	Ahmed T, Tahir M, Low M X, Ren Y, Tawfik S, Mayes E, Kuriakose S, Nawaz S, Spencer S, Chen H, Bhaskaran M, Sriram S, Walia S 2021 Adv. Mater. 33 2004207 Google Scholar
[20]	Wang Z, Xu H, Li X, Yu H, Liu Y, Zhu X 2012 Adv. Funct. Mater. 22 2759 Google Scholar
[21]	Mu B, Guo L, Liao J, Xie P, Ding G, Lv Z, Zhou Y, Han S, YanY 2021 Small 17 2103837 Google Scholar
[22]	Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J K, Aono M 2011 Nat. Mater. 10 591 Google Scholar
[23]	Wan C, Zhu L, Liu Y, Feng P, Liu Z, Cao H, Xiao P, Shi Y, Wan Q 2016 Adv. Mater. 28 3557 Google Scholar
[24]	Zidan M A, Strachan J P, Lu W D 2018 Nat. Electron. 1 22 Google Scholar
[25]	Hu D, Yang R, Jiang L, Guo X 2018 ACS Appl. Mater. Interfaces 10 6463 Google Scholar
[26]	Chen S, Lou Z, Chen D, Shen G 2018 Adv. Mater. 30 1705400 Google Scholar
[27]	Sun F, Lu Q, Feng S, Zhang T 2021 ACS Nano 15 3875 Google Scholar
[28]	Ji X, Zhao X, Tan M C, Zhao R 2020 Adv. Intell. Syst. 2 1900118 Google Scholar
[29]	Carrara S 2021 IEEE Sens. J 21 12370 Google Scholar
[30]	Zhou F, Zhou Z, Chen J, Choy T, Wang J, Zhang N, Lin Z, Yu S, Kang J, Wong H, Chai Y 2019 Nat. Nanotechnol. 14 776 Google Scholar
[31]	Zhou Z, Pei Y, Zhao J, Fu G, Yan X 2021 Appl. Phys. Lett. 118 191103 Google Scholar
[32]	Ling H, Tan K, Fang Q, Xu X, Chen H, Li W, Liu Y, Wang L, Yi M, Huang R, Qian Y, Xie L, Huang W 2017 Adv. Electron. Mater. 3 1600416 Google Scholar
[33]	Wang S, Fan W, Liu Z, Yu A, Jiang X 2018 J. Mater. Chem. C 6 191 Google Scholar
[34]	Tsuruoka T, Terabe K, Hasegawa T, Valov I, Waser R, Aono M 2012 Adv. Funct. Mater. 22 70 Google Scholar
[35]	Deb S, Chopoorian J 1966 J. Appl. Phys. 37 4818 Google Scholar
[36]	Natansohn A, Rochon P 2002 Chem. Rev. 102 4139 Google Scholar
[37]	Tsai H, Asadpour R, Blancon J, Stoumpos C, Durand O, Strzalka J, Chen B, Verduzco R, Ajayan P, Tretiak S, Even J, Alam M, Kanatzidis M, Nie W, Mohite A 2018 Science 360 67 Google Scholar
[38]	Liu Y, Ievlev A V, Collins L, Borodinov N, Belianinov A, Keum J K, Wang M, Ahmadi M, Jesse S, Xiao K, Sumpter B G, Hu B, Kalinin S V, Ovchinnikova O S 2019 Adv. Opt. Mater. 7 1901451 Google Scholar
[39]	Hossain A, Bandyopadhyay P, Karmakar A, Ullah A, Manavalan R, Sakthipandi K, Alhokbany K, Alshehri S, Ahmed J 2021 Ceram. Int. 48 7325
[40]	Walsh A, Stranks S D 2018 ACS Energy Lett. 3 1983 Google Scholar
[41]	Guan X, Hu W, Haque Md A, Wei N, Liu Z, Chen A, Wu T 2018 Adv. Funct. Mater. 28 1704665 Google Scholar
[42]	Yang J M, Kim S G, Seo J Y, Cuhadar C, Son D Y, Lee D, Park N G 2018 Adv. Electron. Mater 4 1800190 Google Scholar
[43]	Yang K, Li F, Veeramalai C P, Guo T 2017 Appl. Phys. Lett. 110 083102 Google Scholar
[44]	Zhao X, Xu H, Wang Z, Lin Y, Liu Y 2019 InfoMat 1 183
[45]	Ahmadi M, Wu T, Hu B 2017 Adv. Mater. 29 1605242 Google Scholar
[46]	Hu J, Yan L, You W 2018 Adv. Mater. 30 1802041 Google Scholar
[47]	Choi J, Han J S, Hong K, Kim S Y, Jang H W 2018 Adv Mater. 30 1870317 Google Scholar
[48]	Manjappa M, Srivastava Y K, Solanki A, Kumar A, Sum T C, Singh R 2017 Adv. Mater. 29 1605881 Google Scholar
[49]	Zhu X, Lu W D 2018 ACS Nano 12 1242
[50]	Zhu X, Lee J, Lu W D 2017 Adv. Mater. 29 1700527 Google Scholar
[51]	Ham S, Choi S, Cho H, Na S, Wang G 2019 Adv. Funct. Mater. 29 1806646 Google Scholar
[52]	Skorodumova N, Simak S, Lundqvist B, Abrikosov I, Johansson B 2002 Phys. Rev. Lett. 89 166601 Google Scholar
[53]	Pan Z, Peng W, Li F, He Y 2018 Adv. Funct. Mater. 28 1706897 Google Scholar
[54]	Tan H, Ni Z, Peng W, Du S, Liu X, Zhao S, Li W, Ye Z, Xu M, Xu Y, Pi X, Yang D 2018 Nano Energy 52 422 Google Scholar
[55]	Ma F, Zhu Y, Xu Z, Liu Y, Zheng X, Ju S, Li Q, Ni Z, Hu H, Chai Y, Wu C, Kim T W, Li F 2020 Adv. Funct. Mater. 30 1908901 Google Scholar
[56]	He H, Yang R, Zhou W, Huang H-M, Xiong J, Gan L, Zhai T, Guo X 2018 Small 14 1800079 Google Scholar
[57]	Yang J, Pickett M, Li X, Ohlberg D, Stewart D, Williams R 2008 Nat. Nanotechnol. 3 429 Google Scholar
[58]	You T, Du N, Slesazeck S, Mikolajick T, Li G, Burger D, Skorupa I, Stocker H, Abendroth B, Beyer A, Volz K, Schmidt O, Schmidt H 2014 ACS Appl. Mater. Interfaces 6 19758 Google Scholar
[59]	Zhai Y, Yang X, Wang F, Li Z, Ding G, Qiu Z, Wang Y, Zhou Y, Han S T 2018 Adv. Mater. 30 1803563 Google Scholar
[60]	Yang R, Huang H, Hong Q, Yin X, Tan Z, Shi T, Zhou Y, Miao X, Wang X, Mi S 2018 Adv. Funct. Mater. 28 1704455 Google Scholar
[61]	Tan H, Liu G, Zhu X, Yang H, Chen B, Chen X, Shang J, Lu W D, Wu Y, Li R 2015 Adv. Mater. 27 2797 Google Scholar
[62]	Zhou S, Ni Z, Ding Y, Sugaya M, Pi X, Nozaki T 2016 ACS Photonics 3 415 Google Scholar
[63]	Ni Z, Ma L, Du S, Xu Y, Yuan M, Fang H, Wang Z, Xu M, Li D, Yang J, Hu W, Pi X, Yang D 2017 ACS Nano 11 9854 Google Scholar
[64]	Ni Z, Pi X, Zhou S, Nozaki T, Grandidier B, Yang D 2016 Adv. Opt. Mater. 4 700 Google Scholar
[65]	Ge R, Wu X, Kim M, Shi J, Sonde S, Tao L, Zhang Y, Lee J, Akinwande D 2018 Nano Lett. 18 434 Google Scholar
[66]	Zhou Y, Liu D, Wang J, Cheng Z, Liu L, Yang N, Liu Y, Xia T, Liu X, Zhang X, Ye C, Xu Z, Xiong W, Chu P, Yu X 2020 ACS Appl. Mater. Interface 12 25108 Google Scholar
[67]	Xiang D, Liu T, Xu J, Tan J, Hu Z, Lei B, Zheng Y, Wu J, Neto A, Liu L, Chen W 2018 Nat. Commun. 9 2966 Google Scholar
[68]	Tran M D, Kim H, Kim J S, Doan M H, Chau T K, Vu Q A, Kim J H, Lee Y H 2019 Adv. Mater. 31 807075
[69]	Pei F, Yan L, Wu Z, Lu J, Zhao J, Chen J Liu Q, Yan X 2021 ACS Nano 15 17319 Google Scholar
[70]	Wang Q S, Wen Y, Cai K M, Cheng R Q, Yin L, Zhang Y, Li J, Wang Z X, Wang F, Wang F M, Shifa T A, Jiang C, Yang H, He J 2018 Sci. Adv. 4 eaap7916 Google Scholar
[71]	Lee J, Pak S, Lee Y W, Cho Y, Hong J, Giraud P, Shin H S, Morris S M, Sohn J I, Cha S, Kim J M 2017 Nat. Commun. 8 14734 Google Scholar
[72]	Miller D A B 2009 Proc. IEEE 97 1166 Google Scholar
[73]	Lin Y, Wang Z, Zhang X, Zeng T, Bai L, Kang Z, Wang C, Zhao X, Xu H, Liu Y. 2020 NPG Asia Mater. 12 1 Google Scholar
[74]	Hu L X, Yang J, Wang J R, Cheng P H, O. Chua L, Zhuge F 2020 Adv. Funct. Mater. 31 2005582
[75]	Ahmed T, Balendhran S, Karim M N, Mayes E L H, Field M R, Ramanathan R, Singh M, Bansal V, Sriram S, Bhaskaran M, Walia S 2017 NPJ 2 D Mater. Appl. 1 18 Google Scholar
[76]	Walia S, Sabri Y, Ahmed T, Field M R, Ramanathan R, Arash A, Bhargava S K, Sriram S, Bhaskaran M, Bansal V, Balendhran S 2017 2 D Mater. 4 015025
[77]	Favron A, Gaufres E, Fossard F, Phaneuf-L'Heureux A L, Tang N Y W, Levesque P L, Loiseau A, Leonelli R, Francoeur S, Martel R 2015 Nat. Mater. 14 826 Google Scholar
[78]	Kuriakose S, Ahmed T, Balendhran S, Bansal V, Sriram S, Bhaskaran M, Walia S 2018 2D Mater. 5 032001 Google Scholar
[79]	Utt K L, Rivero P, Mehboudi M, Harriss E O, Borunda M F, SanJuan A A P, Barraza-Lopez S. 2015 ACS Cent. Sci. 1 320 Google Scholar
[80]	Wood J D, Wells S A, Jariwala D, Chen K S, Cho E, Sangwan V K, Liu X, Lauhon L J, Marks T. J, Hersam M C 2014 Nano Lett. 14 6964 Google Scholar
[81]	Ahmed T, Kuriakose S, Abbas S, Spencer M J S, Rahman M A, Tahir M, Lu Y R, Sonar P, Bansal V, Bhaskaran M, Sriram S, Walia S 2019 Adv. Funct. Mater. 29 1901991 Google Scholar
[82]	Shan X Y, Zhao C Y, Wang X N, Wang Z Q, Lin Y, Zeng T, Zhao X N, Xu H Y, Zhang X T, Liu Y C 2021 Adv. Sci. 8 2104632
[83]	Colton R J, Guzman A M, Rabalais J W 1978 ACC Chem. Res. 11 170 Google Scholar
[84]	Zhu Y, Wu C, Xu Z, Liu Y, Hu H, Guo T, Kim T, Chai Y, Li F 2021 Nano Lett. 21 14
[85]	Shan X, Wang Z, Lin Y, Zeng T, Zhao X, Xu H, Liu Y 2020 Adv. Electron. Mater. 6 2000536 Google Scholar
[86]	Wang W, Gao S, Li Y, Yue W, Kan H, Zhang C, Lou Z, Wang L, Shen G 2021 Adv. Funct. Mater. 31 2101201 Google Scholar
[87]	Yang L, Singh M, Shen S, Chih K, Liu S, Wu C, Chu C, Lin H 2020 Adv. Funct. Mater. 31 2008259
[88]	Fanselow M, Poulos A A 2005 Rev. Psychol. 56 207 Google Scholar
[89]	Liu L, Cheng Z Q, Jiang B, Liu Y X, Zhang Y L, Yang F, Wang J H, Yu X F, Chu P K, Ye C 2021 ACS Appl. Mater. Interfaces 13 30797 Google Scholar
[90]	Li Y, Long S, Liu Q, Lv H, Liu M 2017 Small 13 1604306 Google Scholar
[91]	Zhang K, Meng D, Bai F, Zhai J, Wang Z L 2020 Adv. Funct. Mater. 30 2002945 Google Scholar
[92]	Li Y, Zhong Y P, Deng Y F, Zhou Y X, Xu L, Miao X S 2013 J. Appl. Phys. 114 234503 Google Scholar
[93]	Nguyen D A, Jo Y, Tran T U, Jeong M S, Kim H, Im H 2021 Small Methods 5 2101303 Google Scholar
[94]	Shepherd R K, Shivdasani M N, Nayagam D A, Williams C E, Blamey P J 2013 Trends Biotechnol. 31 562 Google Scholar
[95]	Kolb H 2003 Am. Sci. 91 28 Google Scholar
[96]	Brady T F, Konkle T, Alvarez G A, Oliva A 2008 Proc. Natl Acad. Sci. USA 105 14325 Google Scholar
[97]	Wang G, Wang R, Kong W and Zhang J 2018 Analysis. Cogn. Neurodyn. 12 615 Google Scholar
[98]	Zhou F, Chen J, Tao X, Wang, X and Chai Y 2019 Research 2019 9490413
[99]	Radovic A, Williams M, Rousseau D, Kagan M, Bonacorsi D, Himmel A, Aurisano A, Terao K, Wongjirad T 2018 Nature 560 41 Google Scholar
[100]	Sze V, Then Y, Emer J, Suleiman A, Zhang Z 2017 IEEE Custom Integrated Circuits Conference (CICC) 1
[101]	Xiang D, Liu T, Xu J, Tan J, Hu Z, Lei B, Zheng Y, Wu J, Neto A, Liu L, Chen W 2018 Nat. Commun. 9 1 Google Scholar
[102]	Choi C, Leem J, Kim M S, Taqieddin A, Cho C, Cho K W, Lee G J, Seung H, Bae H J, Song Y M, Hyeon T, Aluru N R, Nam S W, Kim D H 2020 Nat. Commun. 11 1 Google Scholar
[103]	McCollough C 1965 Science 149 1115 Google Scholar
[104]	Huang X, Li Q Y, Shi W, Liu K, Zhang Y P, Liu Y W, Wei X F, Zhao Z Y, Guo Y L, Liu Y Q 2021 Small 17 2102820 Google Scholar
[105]	Yuan J, Zhang Y, Zhou L, Zhang G, Yip H L, Lau T K, Lu X, Zhu C, Peng H, Johnson P A, Leclerc M, Cao Y, Ulanski J, Li Y, Zou Y 2019 Joule 3 1140 Google Scholar
[106]	Seo S, Jo S H, Kim S, Shim J, Oh S, Kim J H, Heo K, Choi J W, Choi C, Oh S, Kuzum D, Wong H P, Park J H 2018 Nat. Commun. 9 5106 Google Scholar
[107]	Wang S, Wang C Y, Wang P F, Wang C, Li Z A, Pan C, Dai1 Y T, Gao A Y, Liu C, Liu J, Yang H F, Liu X W, Cheng B, Chen K J, Wang Z L, Watanabe K J, Taniguchi T, Liang S J, Miao F 2020 Natl. Sci. Rev. 7 1 Google Scholar
[108]	Euler T, Haverkamp S and Schubert T 2014 Nat. Rev. Neurosci. 15 507 Google Scholar
[109]	van Hateren J H, Lamb T D 2006 Neuroscience 7 34
[110]	Wang Z, Li C, Lin P, Rao M Y, Nie Y Y, Song W H, Qiu Q R, Li Y N, Yan P, Strachan J P, Ge N, McDonald N, Wu Q, Hu M, Wu H Q, Williams R S, Xia Q F, Yang J J 2019 Nat. Mach. Intell. 1 434 Google Scholar
[111]	Moon J, Ma W, Shin J H, Cai F X, Du C, Lee S H, Lu W D 2019 Nat. Electron. 2 480 Google Scholar
[112]	Du C, Cai F, Zidan M A, Ma W, Lee S H, Lu W D 2017 Nat. Commun. 8 2204 Google Scholar
[113]	Zhang Z H, Wang S Y, Liu C S, Xie R Z, Hu W D, Zhou P 2021 Nat. Nanotechnol. 17 27
[114]	Qin S, Wang F, Liu Y, Wan Q, Wang X, Xu Y, Shi Y, Wang X, Zhang R 2017 2 D Mater. 4 035022
[115]	Ahn J, Ko K, Kyhm J H, Ra H S, Bae H, Hong S, Kim D Y, Jang J S, Kim T W, Choi S, Kang J H, Kwon N, Park S, Ju B K, Poon T C, Park M C, Im S, Hwang D K 2021 ACS nano 15 17917 Google Scholar
[116]	Xie D D, Yin K, Yang Z J, Huang H, Li X H, Shu Z W, Duan H G, He J, Jiang J 2022 Materials Horizons, 9 1448-1459

Cited By

图 1 综述框架示意图, 主要包括光电忆阻材料与机制, 忆阻器件与特性、功能与应用三部分^{[14,19,30,41,44,64,72,95,96]}

Figure 1. Schematic illustration of optoelectronic memristor in terms of materials and mechanism, device and characteristics, functions and applications^{[14,19,30,41,44,64,72, 95,96]}.

DownLoad: Full-Size Img PowerPoint

图 2 (a) MoO_x光电阻变式存储器的结构示意图; (b) Pd/MoO_x/ITO器件的脉冲开关特性; (c)器件阻变机制示意图^[30]; (d)基于PDR1A材料光学忆阻器结构示意图; (e) ITO/ZnO/PDR1 A/Al结构器件的可逆电阻调制过程; (f) PDR1A分子化学结构的示意图^[32]

Figure 2. (a) Structural illustration of the MoO_x ORRAM; (b) pulse-switching characteristics of Pd/MoO_x/ITO device; (c) schematic of switching mechanism^[30]; (d) schematic of PDR1A based optical memristor; (e) conductance modulation of ITO/ZnO/PDR1A/Al device; (f) schematic of the PDR1A molecules^[32].

DownLoad: Full-Size Img PowerPoint

图 3 (a) 基于MAPbI₃材料的平面结构器件示意图; (b) 光照抑制V_I^·/V_I^×形成加速V_I^·/V_I^×湮灭^[49]; (c) MAPbI₃忆阻器结构图; (d), (e) 光照强度对MAPbI₃器件开启电压和过充电流的影响^[18]; (f) Ag/CH₃NH₃PbI₃ (OHP)/ITO结构光突触器件示意图; (g) 器件在光电脉冲刺激下的响应; (h) 响应幅值随照射时间、频率和强度的变化^[51]

Figure 3. (a) Schematic of MAPBI₃ based planar device; (b) light illumination inhibits the formation and accelerate the annihilation of V_I^·/V_I^× ^[49]; (c) structural illustration of MAPbI₃ based memristor; (d), (e) the variations of V_Forming and I_OV (overshoot current) with light intensity^[18]; (f) structural illustration of Ag/CH₃NH₃PbI₃ (OHP)/ITO optoelectronic memristor; (g) current response under the stimulation of electrical and optical pulse; (h) current response depending on exposure time, frequency and intensity^[51].

DownLoad: Full-Size Img PowerPoint

图 4 (a) ITO/CeO_2–x/AlO_y/Al结构光电突触示意图; (b) 器件阻变特性机制图^[14]; (c) 生物突触和硅纳米晶器件结构图; (d) 硅纳米晶能带结构和载流子输运示意图^[54]; (e) 光调制BP@PS忆阻器示意图; (f) BP@PS器件阻变机制的能带模型^[66]; (g) 基于单层MoS₂的忆阻突触器件; (h) MoS₂/p-Si结阻变示意图^[56]

Figure 4. (a) Schematic diagram of optoelectronic synapse with ITO/CeO_2–x/AlO_y/Al structure; (b) schematic energy band diagram demonstrating memristive characteristics^[14]; (c) schematic of biological synapse and Si-NC-based device; (d) schematic illustration of the band structure and charge carrier transport of Si NCs^[54]; (e) schematic of light modulation BP@PS memristor; (f) energy band diagram explaining RS mechanism^[66]; (g) schematic of memristive synapse based on monolayer MoS₂; (h) schematic illustration of the resistive switching^[56].

DownLoad: Full-Size Img PowerPoint

图 5 (a) 全无机钙钛矿基光电忆阻突触器件示意图; (b) 器件在紫外光下的光开关特性; (c) 器件在电学脉冲信号下的电导调制^[55]; (d) Al/GO-TiO₂/ITO存储器件结构图; (e) 紫外光照射对器件电初始化和阻变的影响; (f) 紫外照射时间对开关电压的调节^[16]; (g) 生物突触及RGO/GO-NCQDs/石墨烯全碳器件示意图; (h) GO-NCQD复合材料的光致还原过程^[73]

Figure 5. (a) Structural diagram of all-inorganic perovskite optoelectronic synapses; (b) optical switching characteristics under UV light; (c) potentiation and depression behaviors under electrical stimulation^[55]; (d) schematic illustration of Al/GO-TiO₂/ITO memory device; (e), (f) the effect of UV irradiation time on forming (e) and switching voltages^[16] (f); (g) schematic illustration of biological synapse and RGO/GO-NCQDs/graphene memristor; (h) photo-reduction process of GO-NCQDs film^[73].

DownLoad: Full-Size Img PowerPoint

图 6 (a) Au/O_D-IGZO/O_R-IGZO/Pt结构的全光调控忆阻器件; (b)不同波长光照射下IGZO器件响应电流; (c) 光照强度对光关闭过程影响; (d) 光开启和光关闭特性; (e) 全光调制过程机制图^[74]; (f) 基于BP材料的光电晶体管; (g), (h) 器件在280 nm和365 nm光脉冲下的响应电流; (i) 器件的长时增强和抑制特性^[19]

Figure 6. (a) Schematic diagram of the Au/O_D-IGZO/O_R-IGZO/Pt device structure; (b) current response depending on light of various wavelengths; (c) effect of power density on optical reset behavior; (d) reversible modulation of device conductance; (e) schematic illustrations of all-optically controlled device^[74]; (f) schematic of BP based device; (g), (h) transient photocurrent under 280 nm and 365 nm illumination; (i) LTP and LTD behaviors under consecutive pulse^[19].

DownLoad: Full-Size Img PowerPoint

图 7 (a) 基于Ag-TiO₂材料的全光调控忆阻器件; (b), (c) 可见光和紫外光脉冲刺激下器件的电流响应; (d), (e) 光照强度和时间对器件电流的影响; (f) 全光可逆调制过程; (g), (h) 器件在光电信号刺激下的运行机制^[82]

Figure 7. (a) Fully light-modulated memristor based on Ag-TiO₂ nanocomposite; (b), (c) transient photocurrent under the illumination of visible and UV light; (d), (e) the response current depending on irradiation time and intensity; (f) fully light-modulated behaviors; (g), (h) operating mechanism of the Ag-TiO₂ based optoelectronic device^[82].

DownLoad: Full-Size Img PowerPoint

图 8 (a) TiN_xO_2–x/MoS₂异质结光电突触器件; (b) 单个光脉冲引起的增强过程; (c) 对脉冲促进(PPF)功能; (d), (e)不同光照强度和时间下器件的电导响应; (f) 连续光脉冲引起的电导变化^[86]

Figure 8. (a) Structural illustration of TiN_xO_2–x/MoS₂ heterostructure-based optoelectronic synapse; (b) optical potentiation process; (c) paired pulse facilitation function; (d), (e) conductance response depending on the illumination intensity and duration; (f) transient response under consecutive optical pulses^[86].

DownLoad: Full-Size Img PowerPoint

图 9 (a) Al/TiS₃/ITO器件结构示意图; (b) 不同波长光照射下的电流-电压曲线; (c) 光电信号下的器件电导变化; (d) 巴普洛夫狗实验中经典条件反射模拟^[89]

Figure 9. (a) Sandwich-like structure of the Al/TiS₃/ITO memristor; (b) RS behaviors modulated by different wavelengths; (c) conductance change under optical and electric signals; (d) simulation of classical conditioning in Pavlov’s dog experiment^[89].

DownLoad: Full-Size Img PowerPoint

图 10 (a) 与门或门逻辑运算转换示意图; (b) 可重构与门、或门输出结果; (c) 真值表及输出电流值^[14]

Figure 10. (a) Logic operation switching of “AND” and “OR” gates; (b) reprogrammable outputs of memlogic “AND” and “OR”; (c) truth table and output current of “AND” and “OR” gate^[14].

DownLoad: Full-Size Img PowerPoint

图 11 (a) 基于光电忆阻器的图像记忆及预处理功能; (b) 神经形态视觉系统图像识别模拟^[30]; (c) 突触光电晶体管光照示意图; (d) 未知彩色光识别功能^[104]

Figure 11. (a) Image memorization and preprocessing functions based on optoelectronic memristor; (b) simulation of image recognition in artificial neural network^[30]; (c) device structure of 2D perovskite/organic heterojunction synaptic phototransistor; (d) simulating the recognition of unknow light^[104].

DownLoad: Full-Size Img PowerPoint

图 12 (a) 人类视觉神经系统及h-BN/WSe₂基突触器件示意图; (b) 不同光照条件下的长时增强和抑制行为; (c) 人工视觉神经网络训练测试实例; (d) 不同训练次数后的识别率^[106]

Figure 12. (a) Schematic illustration of the human optical nerve system; (b) schematic illustration of the human optical nerve system; (c) dataset consisted of colored and color-mixed number for training and testing; (d) dependence of recognition rate on training epochs^[106].

DownLoad: Full-Size Img PowerPoint

图 13 (a) 基于WSe₂/h-BN/Al₂O₃异质结的视网膜拟态传感器件; (b) 异质结器件相应的开关光响应; (c)—(e) 基于神经形态视觉系统实现目标追踪^[107]

Figure 13. (a) Retinomorphic sensor based on WSe₂/h-BN/Al₂O₃ heterostructure device; (b) the On and Off photo response of heterostructure device; (c)–(e) object tracking of neuromorphic vision system^[107].

DownLoad: Full-Size Img PowerPoint

图 14 (a) 多功能视网膜形态器件结构示意图; (b) 不同电压信号调节下的电流响应; (c) 基于二维神经形态器件的动态探测示意图^[113]

Figure 14. (a) All-in-one retinomorphic device; (b) current response under various drain voltage modulation; (c) motion detection based on 2 D retinomorphic device^[113].

DownLoad: Full-Size Img PowerPoint

map

[1]	Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252 Google Scholar
[2]	Lee J, Lu W D 2018 Adv. Mater. 30 1702770 Google Scholar
[3]	Cheng Z G, Rios C, Pernice W H P, Wright C D, Bhaskaran H 2017 Sci. Adv. 3 e1700160 Google Scholar
[4]	Xu W T, Cho H, Kim Y H, Kim Y T, Wolf C, Park C G, Lee T W 2016 Adv. Mater. 28 5916 Google Scholar
[5]	Gholipour B, Bastock P, Craig C, Khan K, Hewak D, Soci C 2015 Adv. Optical Mater. 3 635 Google Scholar
[6]	Mao J Y, Zhou L, Zhu X, Zhou Y, HanS T 2019 Adv. Optical Mater. 7 1900766 Google Scholar
[7]	Chua L 1971 IEEE Trans. Circuit Theory 18 507 Google Scholar
[8]	Wang Z, Zeng T, Ren Y, Lin Y, Xu H, Zhao X, Liu Y, Ielmini D 2020 Nat. Commun. 11 1510 Google Scholar
[9]	Jo S, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297 Google Scholar
[10]	Sun L F, Wang Z R, Jiang J, Kim Y, Joo B, Zheng S, Lee S, Yu W J, Kong B S, Yang H 2021 Sci. Adv. 7 eabg1455 Google Scholar
[11]	Lin Y, Zhang X, Shan X, Zeng T, Zhao X, Wang Z, Kang Z, Xu H, Liu Y 2020 J. Mater. Chem. C 8 14789 Google Scholar
[12]	Kim S J, Kim S B, Jang H W 2021 Iscience 24 101889 Google Scholar
[13]	Milo V, Malavena G, Monzio Compagnoni C, Ielmini D 2020 Material 13 166 Google Scholar
[14]	Tan H, Liu G, Yang H, Yi X, Pan L, Shang J, Long S, Liu M, Wu Y, Li R 2017 ACS Nano 11 11298 Google Scholar
[15]	Gao S, Liu G, Yang H L, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J, Li R 2019 ACS Nano 13 2634 Google Scholar
[16]	Zhao X, Wang Z, Xie Y, Xu H, Zhu J, Zhang X, Liu W, Yang G, Ma J, Liu Y 2018 Small 14 1801325 Google Scholar
[17]	Jaafar A H, Gray R J, Verrelli E, O’Neill M, Kelly S M, Kemp N T 2017 Nanoscale 9 17091 Google Scholar
[18]	Zhao X, Wang Z, Li W, Sun S, Xu H, Zhou P, Xu J, Lin Y, Liu Y 2020 Adv. Funct. Mater. 30 1910151 Google Scholar
[19]	Ahmed T, Tahir M, Low M X, Ren Y, Tawfik S, Mayes E, Kuriakose S, Nawaz S, Spencer S, Chen H, Bhaskaran M, Sriram S, Walia S 2021 Adv. Mater. 33 2004207 Google Scholar
[20]	Wang Z, Xu H, Li X, Yu H, Liu Y, Zhu X 2012 Adv. Funct. Mater. 22 2759 Google Scholar
[21]	Mu B, Guo L, Liao J, Xie P, Ding G, Lv Z, Zhou Y, Han S, YanY 2021 Small 17 2103837 Google Scholar
[22]	Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J K, Aono M 2011 Nat. Mater. 10 591 Google Scholar
[23]	Wan C, Zhu L, Liu Y, Feng P, Liu Z, Cao H, Xiao P, Shi Y, Wan Q 2016 Adv. Mater. 28 3557 Google Scholar
[24]	Zidan M A, Strachan J P, Lu W D 2018 Nat. Electron. 1 22 Google Scholar
[25]	Hu D, Yang R, Jiang L, Guo X 2018 ACS Appl. Mater. Interfaces 10 6463 Google Scholar
[26]	Chen S, Lou Z, Chen D, Shen G 2018 Adv. Mater. 30 1705400 Google Scholar
[27]	Sun F, Lu Q, Feng S, Zhang T 2021 ACS Nano 15 3875 Google Scholar
[28]	Ji X, Zhao X, Tan M C, Zhao R 2020 Adv. Intell. Syst. 2 1900118 Google Scholar
[29]	Carrara S 2021 IEEE Sens. J 21 12370 Google Scholar
[30]	Zhou F, Zhou Z, Chen J, Choy T, Wang J, Zhang N, Lin Z, Yu S, Kang J, Wong H, Chai Y 2019 Nat. Nanotechnol. 14 776 Google Scholar
[31]	Zhou Z, Pei Y, Zhao J, Fu G, Yan X 2021 Appl. Phys. Lett. 118 191103 Google Scholar
[32]	Ling H, Tan K, Fang Q, Xu X, Chen H, Li W, Liu Y, Wang L, Yi M, Huang R, Qian Y, Xie L, Huang W 2017 Adv. Electron. Mater. 3 1600416 Google Scholar
[33]	Wang S, Fan W, Liu Z, Yu A, Jiang X 2018 J. Mater. Chem. C 6 191 Google Scholar
[34]	Tsuruoka T, Terabe K, Hasegawa T, Valov I, Waser R, Aono M 2012 Adv. Funct. Mater. 22 70 Google Scholar
[35]	Deb S, Chopoorian J 1966 J. Appl. Phys. 37 4818 Google Scholar
[36]	Natansohn A, Rochon P 2002 Chem. Rev. 102 4139 Google Scholar
[37]	Tsai H, Asadpour R, Blancon J, Stoumpos C, Durand O, Strzalka J, Chen B, Verduzco R, Ajayan P, Tretiak S, Even J, Alam M, Kanatzidis M, Nie W, Mohite A 2018 Science 360 67 Google Scholar
[38]	Liu Y, Ievlev A V, Collins L, Borodinov N, Belianinov A, Keum J K, Wang M, Ahmadi M, Jesse S, Xiao K, Sumpter B G, Hu B, Kalinin S V, Ovchinnikova O S 2019 Adv. Opt. Mater. 7 1901451 Google Scholar
[39]	Hossain A, Bandyopadhyay P, Karmakar A, Ullah A, Manavalan R, Sakthipandi K, Alhokbany K, Alshehri S, Ahmed J 2021 Ceram. Int. 48 7325
[40]	Walsh A, Stranks S D 2018 ACS Energy Lett. 3 1983 Google Scholar
[41]	Guan X, Hu W, Haque Md A, Wei N, Liu Z, Chen A, Wu T 2018 Adv. Funct. Mater. 28 1704665 Google Scholar
[42]	Yang J M, Kim S G, Seo J Y, Cuhadar C, Son D Y, Lee D, Park N G 2018 Adv. Electron. Mater 4 1800190 Google Scholar
[43]	Yang K, Li F, Veeramalai C P, Guo T 2017 Appl. Phys. Lett. 110 083102 Google Scholar
[44]	Zhao X, Xu H, Wang Z, Lin Y, Liu Y 2019 InfoMat 1 183
[45]	Ahmadi M, Wu T, Hu B 2017 Adv. Mater. 29 1605242 Google Scholar
[46]	Hu J, Yan L, You W 2018 Adv. Mater. 30 1802041 Google Scholar
[47]	Choi J, Han J S, Hong K, Kim S Y, Jang H W 2018 Adv Mater. 30 1870317 Google Scholar
[48]	Manjappa M, Srivastava Y K, Solanki A, Kumar A, Sum T C, Singh R 2017 Adv. Mater. 29 1605881 Google Scholar
[49]	Zhu X, Lu W D 2018 ACS Nano 12 1242
[50]	Zhu X, Lee J, Lu W D 2017 Adv. Mater. 29 1700527 Google Scholar
[51]	Ham S, Choi S, Cho H, Na S, Wang G 2019 Adv. Funct. Mater. 29 1806646 Google Scholar
[52]	Skorodumova N, Simak S, Lundqvist B, Abrikosov I, Johansson B 2002 Phys. Rev. Lett. 89 166601 Google Scholar
[53]	Pan Z, Peng W, Li F, He Y 2018 Adv. Funct. Mater. 28 1706897 Google Scholar
[54]	Tan H, Ni Z, Peng W, Du S, Liu X, Zhao S, Li W, Ye Z, Xu M, Xu Y, Pi X, Yang D 2018 Nano Energy 52 422 Google Scholar
[55]	Ma F, Zhu Y, Xu Z, Liu Y, Zheng X, Ju S, Li Q, Ni Z, Hu H, Chai Y, Wu C, Kim T W, Li F 2020 Adv. Funct. Mater. 30 1908901 Google Scholar
[56]	He H, Yang R, Zhou W, Huang H-M, Xiong J, Gan L, Zhai T, Guo X 2018 Small 14 1800079 Google Scholar
[57]	Yang J, Pickett M, Li X, Ohlberg D, Stewart D, Williams R 2008 Nat. Nanotechnol. 3 429 Google Scholar
[58]	You T, Du N, Slesazeck S, Mikolajick T, Li G, Burger D, Skorupa I, Stocker H, Abendroth B, Beyer A, Volz K, Schmidt O, Schmidt H 2014 ACS Appl. Mater. Interfaces 6 19758 Google Scholar
[59]	Zhai Y, Yang X, Wang F, Li Z, Ding G, Qiu Z, Wang Y, Zhou Y, Han S T 2018 Adv. Mater. 30 1803563 Google Scholar
[60]	Yang R, Huang H, Hong Q, Yin X, Tan Z, Shi T, Zhou Y, Miao X, Wang X, Mi S 2018 Adv. Funct. Mater. 28 1704455 Google Scholar
[61]	Tan H, Liu G, Zhu X, Yang H, Chen B, Chen X, Shang J, Lu W D, Wu Y, Li R 2015 Adv. Mater. 27 2797 Google Scholar
[62]	Zhou S, Ni Z, Ding Y, Sugaya M, Pi X, Nozaki T 2016 ACS Photonics 3 415 Google Scholar
[63]	Ni Z, Ma L, Du S, Xu Y, Yuan M, Fang H, Wang Z, Xu M, Li D, Yang J, Hu W, Pi X, Yang D 2017 ACS Nano 11 9854 Google Scholar
[64]	Ni Z, Pi X, Zhou S, Nozaki T, Grandidier B, Yang D 2016 Adv. Opt. Mater. 4 700 Google Scholar
[65]	Ge R, Wu X, Kim M, Shi J, Sonde S, Tao L, Zhang Y, Lee J, Akinwande D 2018 Nano Lett. 18 434 Google Scholar
[66]	Zhou Y, Liu D, Wang J, Cheng Z, Liu L, Yang N, Liu Y, Xia T, Liu X, Zhang X, Ye C, Xu Z, Xiong W, Chu P, Yu X 2020 ACS Appl. Mater. Interface 12 25108 Google Scholar
[67]	Xiang D, Liu T, Xu J, Tan J, Hu Z, Lei B, Zheng Y, Wu J, Neto A, Liu L, Chen W 2018 Nat. Commun. 9 2966 Google Scholar
[68]	Tran M D, Kim H, Kim J S, Doan M H, Chau T K, Vu Q A, Kim J H, Lee Y H 2019 Adv. Mater. 31 807075
[69]	Pei F, Yan L, Wu Z, Lu J, Zhao J, Chen J Liu Q, Yan X 2021 ACS Nano 15 17319 Google Scholar
[70]	Wang Q S, Wen Y, Cai K M, Cheng R Q, Yin L, Zhang Y, Li J, Wang Z X, Wang F, Wang F M, Shifa T A, Jiang C, Yang H, He J 2018 Sci. Adv. 4 eaap7916 Google Scholar
[71]	Lee J, Pak S, Lee Y W, Cho Y, Hong J, Giraud P, Shin H S, Morris S M, Sohn J I, Cha S, Kim J M 2017 Nat. Commun. 8 14734 Google Scholar
[72]	Miller D A B 2009 Proc. IEEE 97 1166 Google Scholar
[73]	Lin Y, Wang Z, Zhang X, Zeng T, Bai L, Kang Z, Wang C, Zhao X, Xu H, Liu Y. 2020 NPG Asia Mater. 12 1 Google Scholar
[74]	Hu L X, Yang J, Wang J R, Cheng P H, O. Chua L, Zhuge F 2020 Adv. Funct. Mater. 31 2005582
[75]	Ahmed T, Balendhran S, Karim M N, Mayes E L H, Field M R, Ramanathan R, Singh M, Bansal V, Sriram S, Bhaskaran M, Walia S 2017 NPJ 2 D Mater. Appl. 1 18 Google Scholar
[76]	Walia S, Sabri Y, Ahmed T, Field M R, Ramanathan R, Arash A, Bhargava S K, Sriram S, Bhaskaran M, Bansal V, Balendhran S 2017 2 D Mater. 4 015025
[77]	Favron A, Gaufres E, Fossard F, Phaneuf-L'Heureux A L, Tang N Y W, Levesque P L, Loiseau A, Leonelli R, Francoeur S, Martel R 2015 Nat. Mater. 14 826 Google Scholar
[78]	Kuriakose S, Ahmed T, Balendhran S, Bansal V, Sriram S, Bhaskaran M, Walia S 2018 2D Mater. 5 032001 Google Scholar
[79]	Utt K L, Rivero P, Mehboudi M, Harriss E O, Borunda M F, SanJuan A A P, Barraza-Lopez S. 2015 ACS Cent. Sci. 1 320 Google Scholar
[80]	Wood J D, Wells S A, Jariwala D, Chen K S, Cho E, Sangwan V K, Liu X, Lauhon L J, Marks T. J, Hersam M C 2014 Nano Lett. 14 6964 Google Scholar
[81]	Ahmed T, Kuriakose S, Abbas S, Spencer M J S, Rahman M A, Tahir M, Lu Y R, Sonar P, Bansal V, Bhaskaran M, Sriram S, Walia S 2019 Adv. Funct. Mater. 29 1901991 Google Scholar
[82]	Shan X Y, Zhao C Y, Wang X N, Wang Z Q, Lin Y, Zeng T, Zhao X N, Xu H Y, Zhang X T, Liu Y C 2021 Adv. Sci. 8 2104632
[83]	Colton R J, Guzman A M, Rabalais J W 1978 ACC Chem. Res. 11 170 Google Scholar
[84]	Zhu Y, Wu C, Xu Z, Liu Y, Hu H, Guo T, Kim T, Chai Y, Li F 2021 Nano Lett. 21 14
[85]	Shan X, Wang Z, Lin Y, Zeng T, Zhao X, Xu H, Liu Y 2020 Adv. Electron. Mater. 6 2000536 Google Scholar
[86]	Wang W, Gao S, Li Y, Yue W, Kan H, Zhang C, Lou Z, Wang L, Shen G 2021 Adv. Funct. Mater. 31 2101201 Google Scholar
[87]	Yang L, Singh M, Shen S, Chih K, Liu S, Wu C, Chu C, Lin H 2020 Adv. Funct. Mater. 31 2008259
[88]	Fanselow M, Poulos A A 2005 Rev. Psychol. 56 207 Google Scholar
[89]	Liu L, Cheng Z Q, Jiang B, Liu Y X, Zhang Y L, Yang F, Wang J H, Yu X F, Chu P K, Ye C 2021 ACS Appl. Mater. Interfaces 13 30797 Google Scholar
[90]	Li Y, Long S, Liu Q, Lv H, Liu M 2017 Small 13 1604306 Google Scholar
[91]	Zhang K, Meng D, Bai F, Zhai J, Wang Z L 2020 Adv. Funct. Mater. 30 2002945 Google Scholar
[92]	Li Y, Zhong Y P, Deng Y F, Zhou Y X, Xu L, Miao X S 2013 J. Appl. Phys. 114 234503 Google Scholar
[93]	Nguyen D A, Jo Y, Tran T U, Jeong M S, Kim H, Im H 2021 Small Methods 5 2101303 Google Scholar
[94]	Shepherd R K, Shivdasani M N, Nayagam D A, Williams C E, Blamey P J 2013 Trends Biotechnol. 31 562 Google Scholar
[95]	Kolb H 2003 Am. Sci. 91 28 Google Scholar
[96]	Brady T F, Konkle T, Alvarez G A, Oliva A 2008 Proc. Natl Acad. Sci. USA 105 14325 Google Scholar
[97]	Wang G, Wang R, Kong W and Zhang J 2018 Analysis. Cogn. Neurodyn. 12 615 Google Scholar
[98]	Zhou F, Chen J, Tao X, Wang, X and Chai Y 2019 Research 2019 9490413
[99]	Radovic A, Williams M, Rousseau D, Kagan M, Bonacorsi D, Himmel A, Aurisano A, Terao K, Wongjirad T 2018 Nature 560 41 Google Scholar
[100]	Sze V, Then Y, Emer J, Suleiman A, Zhang Z 2017 IEEE Custom Integrated Circuits Conference (CICC) 1
[101]	Xiang D, Liu T, Xu J, Tan J, Hu Z, Lei B, Zheng Y, Wu J, Neto A, Liu L, Chen W 2018 Nat. Commun. 9 1 Google Scholar
[102]	Choi C, Leem J, Kim M S, Taqieddin A, Cho C, Cho K W, Lee G J, Seung H, Bae H J, Song Y M, Hyeon T, Aluru N R, Nam S W, Kim D H 2020 Nat. Commun. 11 1 Google Scholar
[103]	McCollough C 1965 Science 149 1115 Google Scholar
[104]	Huang X, Li Q Y, Shi W, Liu K, Zhang Y P, Liu Y W, Wei X F, Zhao Z Y, Guo Y L, Liu Y Q 2021 Small 17 2102820 Google Scholar
[105]	Yuan J, Zhang Y, Zhou L, Zhang G, Yip H L, Lau T K, Lu X, Zhu C, Peng H, Johnson P A, Leclerc M, Cao Y, Ulanski J, Li Y, Zou Y 2019 Joule 3 1140 Google Scholar
[106]	Seo S, Jo S H, Kim S, Shim J, Oh S, Kim J H, Heo K, Choi J W, Choi C, Oh S, Kuzum D, Wong H P, Park J H 2018 Nat. Commun. 9 5106 Google Scholar
[107]	Wang S, Wang C Y, Wang P F, Wang C, Li Z A, Pan C, Dai1 Y T, Gao A Y, Liu C, Liu J, Yang H F, Liu X W, Cheng B, Chen K J, Wang Z L, Watanabe K J, Taniguchi T, Liang S J, Miao F 2020 Natl. Sci. Rev. 7 1 Google Scholar
[108]	Euler T, Haverkamp S and Schubert T 2014 Nat. Rev. Neurosci. 15 507 Google Scholar
[109]	van Hateren J H, Lamb T D 2006 Neuroscience 7 34
[110]	Wang Z, Li C, Lin P, Rao M Y, Nie Y Y, Song W H, Qiu Q R, Li Y N, Yan P, Strachan J P, Ge N, McDonald N, Wu Q, Hu M, Wu H Q, Williams R S, Xia Q F, Yang J J 2019 Nat. Mach. Intell. 1 434 Google Scholar
[111]	Moon J, Ma W, Shin J H, Cai F X, Du C, Lee S H, Lu W D 2019 Nat. Electron. 2 480 Google Scholar
[112]	Du C, Cai F, Zidan M A, Ma W, Lee S H, Lu W D 2017 Nat. Commun. 8 2204 Google Scholar
[113]	Zhang Z H, Wang S Y, Liu C S, Xie R Z, Hu W D, Zhou P 2021 Nat. Nanotechnol. 17 27
[114]	Qin S, Wang F, Liu Y, Wan Q, Wang X, Xu Y, Shi Y, Wang X, Zhang R 2017 2 D Mater. 4 035022
[115]	Ahn J, Ko K, Kyhm J H, Ra H S, Bae H, Hong S, Kim D Y, Jang J S, Kim T W, Choi S, Kang J H, Kwon N, Park S, Ju B K, Poon T C, Park M C, Im S, Hwang D K 2021 ACS nano 15 17917 Google Scholar
[116]	Xie D D, Yin K, Yang Z J, Huang H, Li X H, Shu Z W, Duan H G, He J, Jiang J 2022 Materials Horizons, 9 1448-1459

[1]	Wang Meng-Jiao, Yang Chen, He Shao-Bo, Li Zhi-Jun. A novel compound exponential locally active memristor coupled Hopfield neural network. Acta Physica Sinica, 2024, 73(13): 130501. doi: 10.7498/aps.73.20231888
[2]	Wei Wei, Guan Feng, Fang Xin. Integrated vibration absorption and isolation design method for metamaterial beams based on bandgap wave-insulating vibration isolatior. Acta Physica Sinica, 2024, 73(22): 224602. doi: 10.7498/aps.73.20241135
[3]	Guo Hui-Meng, Liang Yan, Dong Yu-Jiao, Wang Guang-Yi. Simplification of Chua corsage memristor and hardware implementation of its neuron circuit. Acta Physica Sinica, 2023, 72(7): 070501. doi: 10.7498/aps.72.20222013
[4]	Jiang Bi-Yi, Zhou Fei-Chi, Chai Yang. Application of neuromorphic resistive random access memory in image processing. Acta Physica Sinica, 2022, 71(14): 148504. doi: 10.7498/aps.71.20220463
[5]	Wu Chang-Chun, Zhou Pu-Jun, Wang Jun-Jie, Li Guo, Hu Shao-Gang, Yu Qi, Liu Yang. Memristor based spiking neural network accelerator architecture. Acta Physica Sinica, 2022, 71(14): 148401. doi: 10.7498/aps.71.20220098
[6]	Ren Kuan, Zhang Wo-Yu, Wang Fei, Guo Ze-Yu, Shang Da-Shan. Next-generation reservoir computing based on memristor array. Acta Physica Sinica, 2022, 71(14): 140701. doi: 10.7498/aps.71.20220082
[7]	Wang Shi-Chang, Lu Zhen-Zhou, Liang Yan, Wang Guang-Yi. Neuromorphic behaviors of N-type locally-active memristor. Acta Physica Sinica, 2022, 71(5): 050502. doi: 10.7498/aps.71.20212017
[8]	Zhu Jia-Xue, Zhang Xu-Meng, Wang Rui, Liu Qi. Flexible memristive spiking neuron for neuromorphic sensing and computing. Acta Physica Sinica, 2022, 71(14): 148503. doi: 10.7498/aps.71.20212323
[9]	Wang Tong, Wen Juan, Lü Kang, Chen Jian-Zhong, Wang Liang, Guo Xin. Bio-inspired sensory systems with integrated capabilities of sensing, data storage, and processing. Acta Physica Sinica, 2022, 71(14): 148702. doi: 10.7498/aps.71.20220281
[10]	Chen Yang-Yang, He Yu-Hui, Miao Xiang-Shui, Yang Dao-Hong. 3D-NAND flash memory based neuromorphic computing. Acta Physica Sinica, 2022, 71(21): 210702. doi: 10.7498/aps.71.20220974
[11]	Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui. Memristive brain-like computing. Acta Physica Sinica, 2022, 71(14): 140501. doi: 10.7498/aps.71.20220666
[12]	Shen Liu-Feng, Hu Ling-Xiang, Kang Feng-Wen, Ye Yu-Min, Zhuge Fei. Optoelectronic neuromorphic devices and their applications. Acta Physica Sinica, 2022, 71(14): 148505. doi: 10.7498/aps.71.20220111
[13]	Zhang Yu-Qi, Wang Jun-Jie, Lü Zi-Yu, Han Su-Ting. Multimode modulated memristors for in-sensor computing system. Acta Physica Sinica, 2022, 71(14): 148502. doi: 10.7498/aps.71.20220226
[14]	Hu Wei, Liao Jian-Bin, Du Yong-Qian. An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505. doi: 10.7498/aps.70.20210116
[15]	Zhu Wei, Guo Tian-Tian, Liu Lan, Zhou Rong-Rong. Al-based memristor applied to habituation sensory nervous system. Acta Physica Sinica, 2021, 70(6): 068502. doi: 10.7498/aps.70.20201961
[16]	Ren Kuan, Zhang Ke-Jia, Qin Xi-Zi, Ren Huan-Xin, Zhu Shou-Hui, Yang Feng, Sun Bai, Zhao Yong, Zhang Yong. Research progress of neuromorphic computation based on memcapacitors. Acta Physica Sinica, 2021, 70(7): 078701. doi: 10.7498/aps.70.20201632
[17]	Zhu Lei-Jie, Wang Fa-Qiang. Design and analysis of new meminductor model based on Knowm memristor. Acta Physica Sinica, 2019, 68(19): 198501. doi: 10.7498/aps.68.20190793
[18]	Xu Wei, Wang Yu-Qi, Li Yue-Feng, Gao Fei, Zhang Miao-Cheng, Lian Xiao-Juan, Wan Xiang, Xiao Jian, Tong Yi. Design of novel memristor-based neuromorphic circuit and its application in classical conditioning. Acta Physica Sinica, 2019, 68(23): 238501. doi: 10.7498/aps.68.20191023
[19]	Wang Xiao-Yuan, Yu Jun, Wang Guang-Yi. Simulink modeling of memristor, memcapacitor, meminductor and their characteristics analysis. Acta Physica Sinica, 2018, 67(9): 098501. doi: 10.7498/aps.67.20172674
[20]	Sun Jian, Liu Wei-Qiang. Investigation on integral model of heat-pipe-cooled leading edge of hypersonic vehicle. Acta Physica Sinica, 2013, 62(7): 074401. doi: 10.7498/aps.62.074401

Catalog

Vol. 71, Issue 14 - 2022-07-20

Metrics

Abstract views: 15332
PDF Downloads: 1247
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板