Controllable preparation and photoelectric applications of two-dimensional in-plane and van der Waals heterostructures

Yao Wen-Qian; Sun Jian-Zhe; Chen Jian-Yi; Guo Yun-Long; Wu Bin; Liu Yun-Qi

doi:10.7498/aps.70.20201419

Abstract

Since the discovery of graphene, two-dimensional (2D) materials have received continuous attention and carried out in-depth exploration and development due to their excellent properties. With the exploration of the preparation of new 2D materials, one began to consider the synergistic effects produced by the in-plane junction and interlayer stacking to compensate for the defects of a single material and obtain some new properties. Matching the lattice structure to achieve specific functionalization, or using van der Waals force to achieve stacking, helps to introduce a new degree of freedom by combining different 2D materials, and open a new window for the research and practical application of 2D materials.From the perspective of atomic manufacturing, in this article we introduce the controllable preparation and optoelectronic applications of 2D planar and van der Waals heterojunction materials. First, we briefly introduce the common 2D materials such as graphene, hexagonal boron nitride, transition metal dichalcogenides and black phosphorus used in the preparation of heterojunctions and related concepts of heterojunctions. Second, we review, in principle, the commonly used characterization methods including scanning probe-based techniques, spectrum-based, electron-based imaging techniques and others. Third, we summarize the preparation methods of planar and vertical heterojunctions. Basically, mechanical transfer method such as wet or dry method can be used to produce various vertical heterostructures of 2D materials, but usually lack the scalability. On the other hand, chemical vapor deposition method provides a scalable route to producing the planar heterostructure and vertical structure of 2D materials. Several strategies have been developed to produce various heterostructures. In addition, the recent development of twist-angle and quasi-crystalline bi-layer graphene is briefly reviewed. Fourth, the properties and applications of 2D van der Waals heterostructures such as field-effect transistor, light emitting diode, solar cell, flexible optoelectronic devices and plasmonic applications are introduced. Finally, the problems in the field are discussed, and the outlook is provided.

Keywords:

Authors and contacts

1.
Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2.
Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Wu Bin, wubin@iccas.ac.cn ; Liu Yun-Qi, liuyq@iccas.ac.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2016YFA0200101), the National Natural Science Foundation of China (Grant Nos. 21633012, 61890940), the Strategic Priority Research Program of the Chinese Academy of Sciences, China (Grant No. XDB30000000), and the CAS Key Research Program of Frontier Sciences, China (Grant No. QYZDY-SSW-SLH029)

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Cited By

图 1 机械转移制备vdWHs示意图　(a) 楔形转移法^[43]; (b)干法转移^[47]

Figure 1. Schematic of mechanical transfer for the preparation of vdWHs: (a) Wedge-transfer^[43]; (b) dry transfer method^[47].

DownLoad: Full-Size Img PowerPoint

图 2 h-BN沿石墨烯不同边界的外延生长　(a)刻蚀的单晶石墨烯过程示意图, 从左到右分别显示六边形单晶石墨烯、具有zigzag边界的石墨烯刻蚀孔洞、十二边形的石墨烯刻蚀图案以及具有armchair外边界图案; (b), (c) h-BN沿armchair边界生长的SEM图; (d), (e) h-BN沿zigzag和armchair边界生长的SEM图; (f) h-BN沿十二边形石墨烯边界生长的SEM图^[77]

Figure 2. h-BN growth along different graphene edges: (a) Schematic of different etched stages of a graphene flake showing a flake (I), etched hole with zigzag edges (II), etched dodecagonal perimeters (III), and etched perimeters with armchair edges (IV); (b), (c) SEM images of h-BN grown along armchair edges of graphene taken with different magnification; (d), (e) SEM images of h-BN stripes grown along both zigzag and armchair edges of graphene; (f) SEM image of h-BN stripes grown along edges of dodecagon graphene^[77].

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图 3 MoSe₂/WSe₂异质结的制备　(a)以MoSe₂为模板生长WSe₂的示意图; (b), (c), (d)分别为MoSe₂、类型I、类型II的光学显微图^[75]

Figure 3. The growth of MoSe₂/WSe₂ vdWH: (a) Diagram of MoSe₂-templated WSe₂ growth; (b), (c), (d) optical images of as-grown MoSe₂, type I and type II^[75].

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图 4 石墨烯的层层生长差异　(a), (b)铜上生长的单层定向石墨烯片SEM 图和示意图; (c), (d)铜上生长的双层石墨烯片SEM 图和示意图; (e)−(g)双层石墨烯的生长随氢气量的不同而变化^[122]

Figure 4. (a), (b) SEM image of aligned single layer graphene flakes grown on a solid Cu and the corresponding diagram of (a); (c), (d) SEM images of bi-layer graphene flakes grown on a solid Cu surface and the corresponding diagram of (c); (e)−(g) typical SEM images of bi-layer graphene flakes grown with H₂ flow rates of 20, 35 and 50 sccm (1 sccm=1 mL/min), respectively^[122].

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图 5 文章结构示意图

Figure 5. Schematic diagram of materials, characterizations, synthesis, properties and applications of 2D heterostructures.

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Vol. 70, Issue 2 - 2021-01-20

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