Numerical simulation of graphene/Ag<sub>2</sub>ZnSnSe<sub>4</sub> induced p-n junction solar cell

Xiao You-Peng; Wang Huai-Ping; Li Gang-Long

doi:10.7498/aps.70.20201194

Abstract

Ag₂ZnSnSe₄ is an n-type semiconductor with a suitable bandgap of 1.4 eV. In the present study, a graphene/Ag₂ZnSnSe₄ induced p-n junction thin film solar cell is proposed and the physical mechanism and performance influencing factors of the solar cell are simulated and analyzed by using the wxAMPS software. The simulation results show that when a high work function graphene contacts an n-type Ag₂ZnSnSe₄ semiconductor, the energy band of the Ag₂ZnSnSe₄ absorber layer bends upward, meanwhile a p-type Ag₂ZnSnSe₄ inversion layer is induced on the surface of n-type Ag₂ZnSnSe₄, therefore the p-type Ag₂ZnSnSe₄ and n-type Ag₂ZnSnSe₄ form an induced p-n homojunction. It is found that the work function of graphene and back contact significantly influence the photogenerated carrier separation, transportation and collection. The graphene work function should be 5.5 eV and the work function of back contact should not be greater than 4.4 eV, which is beneficial to the improving of the device performance. The doping concentration of Ag₂ZnSnSe₄ absorber mainly affects the short-circuit current of the device, however, the defect density of Ag₂ZnSnSe₄ absorber affects the whole device performance. When the work function of graphene and back contact are 5.5 eV and 3.8 eV, the doping concentration and defect density of Ag₂ZnSnSe₄ absorber are 10¹⁶ cm^–3 and 10¹⁴ cm^–33, respectively, the conversion efficiency of the graphene/Ag₂ZnSnSe₄ induced p-n junction thin film solar cell can reach 23.42%. These simulation results provide the idea and physical explanation for designing a novel type of solar cell with high efficiency and low cost.

Keywords:

Authors and contacts

1.
Engineering Research Center of Nuclear Technology Application, Ministry of Education, East China University of Technology, Nanchang 330013, China
2.
School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China

Corresponding author: Xiao You-Peng, xiaoypnc@ecut.edu.cn

Funds: Scientific Research Staring Foundation for Doctors of East China University of Technology, China (Grant No. DHBK2019170).

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References

[1]	Repins I, Beall C, Vora N, DeHart C, Kuciauskas D, Dippo P, To B, Mann J, Hsu W C, Goodrich A, Noufi R 2012 Sol. Energy Mater. Sol.Cells 101 154 Google Scholar
[2]	Liu F, Sun K, Li W, Yan C, Cui H, Jiang L, Hao X, Green M A 2014 Appl. Phys. Lett. 104 051105 Google Scholar
[3]	Zeng X, Tai K F, Zhang T, Ho C W J, Chen X, Huan A, Sum T C, Wong L H 2014 Sol. Energy Mater. Sol. Cells 124 55 Google Scholar
[4]	Chen S, Gong X G, Walsh A, Wei S H 2010 Appl. Phys. Lett. 96 021902 Google Scholar
[5]	Gokmen T, Gunawan O, Todorov T K, Mitzi D B 2013 Appl. Phys. Lett. 103 103506 Google Scholar
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Cited By

图 1 模拟器件结构

Figure 1. Structure of the graphene/AZTSe induced p-n junction solar cell used in the numerical simulation.

DownLoad: Full-Size Img PowerPoint

图 2 不同石墨烯功函数情况下电池的　(a)电流密度-电压特性曲线, (b)能带结构, (c)电场分布, (d)载流子浓度, (e)载流子复合率分布, (f)量子效率

Figure 2. Graphene/AZTSe induced p-n junction thin film solar cell with different values of graphene work function (a) current density-voltage curves, (b) energy band structure, (c) electric field, (d) carrier concentration, (e) carrier recombination rate profile, (f) quantum efficiency.

DownLoad: Full-Size Img PowerPoint

图 3 不同背接触功函数时电池的　(a)电流密度-电压特性曲线, (b)能带结构, (c)电子浓度, (d)载流子复合率分布

Figure 3. Graphene/AZTSe induced p-n junction thin film solar cell with different values of back contact work function (a) current density-voltage curves, (b) energy band structure, (c) carrier concentration, (d) carrier recombination rate profile.

DownLoad: Full-Size Img PowerPoint

图 4 不同吸收层掺杂浓度时电池的电流密度-电压特性曲线

Figure 4. Current density-Voltage curves of graphene/AZTSe induced p-n junction solar cell with different values of absorber layer doping concentration.

DownLoad: Full-Size Img PowerPoint

图 5 不同吸收层缺陷密度时的电流密度-电压特性曲线

Figure 5. Current density-Voltage curves of graphene/AZTSe induced p-n junction solar cell with different values of absorber layer defect densities.

DownLoad: Full-Size Img PowerPoint

表 1 模拟使用的主要材料参数

Table 1. Main material parameters used in the numerical simulation.

参数	AZTSe
厚度/µm	2
相对介电常数 ε_r	12.6
电子亲和能 χ_e/eV	4.2
禁带宽度 E_g/eV	1.4
施主掺杂浓度 N_D/cm^–3	10¹¹—10¹⁶
导带有效态密度 N_c /cm^–3	2.2 × 10¹⁸
价带有效态密度N_v /cm^–3	1.8 × 10¹⁹
电子迁移率 µ_n/cm²·V^–1·s^–1	100
空穴迁移率 µ_p/cm²·V^-1·s^–1	2
缺陷密度 N_t/cm^–3	10¹³—10¹⁸

DownLoad: CSV

map

[1]	Repins I, Beall C, Vora N, DeHart C, Kuciauskas D, Dippo P, To B, Mann J, Hsu W C, Goodrich A, Noufi R 2012 Sol. Energy Mater. Sol.Cells 101 154 Google Scholar
[2]	Liu F, Sun K, Li W, Yan C, Cui H, Jiang L, Hao X, Green M A 2014 Appl. Phys. Lett. 104 051105 Google Scholar
[3]	Zeng X, Tai K F, Zhang T, Ho C W J, Chen X, Huan A, Sum T C, Wong L H 2014 Sol. Energy Mater. Sol. Cells 124 55 Google Scholar
[4]	Chen S, Gong X G, Walsh A, Wei S H 2010 Appl. Phys. Lett. 96 021902 Google Scholar
[5]	Gokmen T, Gunawan O, Todorov T K, Mitzi D B 2013 Appl. Phys. Lett. 103 103506 Google Scholar
[6]	Chen S, Walsh A, Gong X G, Wei S H 2013 Adv. Mater. 25 1522 Google Scholar
[7]	Yeh L Y, Cheng K W 2014 Thin Solid Films 558 289 Google Scholar
[8]	Patil R M, Nagapure D R, Chandra G H, Subbaiah Y P V, Gupta M, Rao R P 2020 Phys. Status Solidi 217 1900752 Google Scholar
[9]	Yuan Z K, Chen S, Xiang H, Gong X G, Walsh A, Park J S, Repins I, Wei S H 2015 Adv. Funct. Mater. 25 6733 Google Scholar
[10]	Chagarov E, Sardashti K, Kummel A C, Lee Y S, Haight R, Gershon T S 2016 J. Chem. Phys. 144 104704 Google Scholar
[11]	Gershon T, Sardashti K, Gunawan O, Mankad R, Singh S, Lee Y S, Ott J A, Kummel A, Haight R 2016 Adv. Energy Mater. 6 1601182 Google Scholar
[12]	肖友鹏, 高超, 王涛, 周浪 2017 66 158801 Google Scholar Xiao Y P, Gao C, Wang T, Zhou L 2017 Acta Phys. Sin. 66 158801 Google Scholar
[13]	曹宇, 祝新运, 陈瀚博, 王长刚, 张鑫童, 候秉东, 申明仁, 周静 2018 67 247301 Google Scholar Cao Y, Zhu X Y, Chen H B, Wang C G, Zhang X T, Hou B D, Shen M R, Zhou J 2018 Acta Phys. Sin. 67 247301 Google Scholar
[14]	梁晓娟, 曹宇, 蔡宏琨, 苏健, 倪牮, 李娟, 张建军 2020 69 057901 Google Scholar Liang X J, Cao Y, Cai H K, Su J, Ni J, Li J, Zhang J J 2020 Acta Phys. Sin. 69 057901 Google Scholar
[15]	张翱, 张春秀, 陈云林, 张春梅, 孟涛 2020 69 118801 Google Scholar Zhang A, Zhang C X, Chen Y L, Zhang C M, Meng T 2020 Acta Phys. Sin. 69 118801 Google Scholar
[16]	Gershon T, Sardashti K, Lee Y S, Gunawan O, Singh S, Bishop D, Kummel A C, Haight R 2017 Acta Mater. 126 383 Google Scholar
[17]	Gershon T, Gunawan O, Gokmen T, Brew K W, Singh S, Hopstaken M, Poindester J R, Barnard E S, Buonassisi T, Haight R 2017 J. Appl. Phys. 121 174501 Google Scholar
[18]	Jia J, Li Y, Yao B, Ding Z, Deng R, Jiang Y, Sui Y 2017 J. Appl. Phys. 121 215305 Google Scholar
[19]	Jiang Y, Yao B, Jia J, Ding Z, Deng R, Liu D, Sui Y, Wang H, Li Y 2019 J. Appl. Phys. 125 025703 Google Scholar
[20]	Hibino H, Kageshima H, Kotsugi M, Maeda F, Guo F Z, Watanabe Y 2009 Phys. Rev. B 79 125437 Google Scholar
[21]	Garg R, Dutta N K, Choudhury N R 2014 Nanomaterials 4 267 Google Scholar
[22]	Kim J H, Hwang J H, Suh J, Tongay S, Kwon S, Hwang C C, Wu J, Park J Y 2013 Appl. Phys. Lett. 103 171604 Google Scholar
[23]	Seo J, Bong J, Cha J, Lim T, Son J, Park S H, Hwang J, Hong S, Ju S 2014 J. Appl. Phys. 116 084312 Google Scholar
[24]	Bivour M, Temmler J, Steinkemper H, Hermle M 2015 Sol. Energy Mater. Sol. Cells 142 34 Google Scholar
[25]	Gerling L G, Voz C, Alcubilla R, Puigdollers J 2017 J. Mater. Res. 32 260 Google Scholar
[26]	Dréon J, Jeangros Q, Cattin J, Haschke J, Antognini L, Ballif C, Boccard M 2020 Nano Energy 70 104495 Google Scholar

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Numerical simulation of graphene/Ag₂ZnSnSe₄ induced p-n junction solar cell

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Corresponding author: Xiao You-Peng, xiaoypnc@ecut.edu.cn

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Numerical simulation of graphene/Ag2ZnSnSe4 induced p-n junction solar cell

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Corresponding author: Xiao You-Peng, xiaoypnc@ecut.edu.cn

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Numerical simulation of graphene/Ag₂ZnSnSe₄ induced p-n junction solar cell