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Graphene is predicted to hold a promising use for developing future miniaturized electronic devices. However, the magnetic transport properties based on the armchair-edged graphene nanoribbons (AGNRs) is less studied in currently existing work. So in this work the special chemical modified nanoribbons based on the edge of the AGNR bridged by the transition metal Mn atom and passivated subsequently by two F atoms or two H atoms (AGNR-Mn-F2 or AGNR-Mn-H2) are proposed theoretically. Our calculations from first-principle method based on the spin-polarized density functional theory combined with the non-equilibrium Green's function technique show that the heterojunction F2-AGNR-Mn-H2 consisting of such two types of nanoribbons possesses the excellent magnetic device features, namely, the spin polarization is able to reach almost 100% in a very large bias region, and under P magnetic configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the same direction), the single spin filtering effects can be realized, while under the AP configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the opposite directions), the dual spin filtering effects can be realized. It is also found that such a heterojunction features dual diode-like effect, and its rectification ratio is up to be 108. Additionally, changing the direction of switching magnetic field, namely, changing the magnetic configurations from one kind of case to another, would lead to an obvious spin valve effect, and the giant magnetoresistace approaches to 108%. These findings suggest that the excellent spin polarization, dual diode-like effect, and giant magnetoresistace effect can be realized simultaneously for this heterojunction, therefore, it holds good promise in developing spintronic devices.
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Keywords:
- graphene nanoribbon heterojunction /
- spin filter effect /
- spin diode-like effect /
- giant magnetoresistace effect
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[3] Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J 2008 Solid State Commun. 146 351
[4] Kim T W, Gao Y, Acton O, Yip H L, Ma H, Chen H 2010 Appl. Phys. Lett. 97 023310
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[11] Zhang X J, Chen K Q, Tang L M, Long M Q 2011 Phys. Lett. A 375 3319
[12] Chen Y, Hu H F, Wang X W, Zhang Z J, Cheng C P 2015 Acta Phys.Sin. 64 196101 (in Chinese) [陈鹰, 胡慧芳, 王晓伟, 张照锦, 程彩萍 2015 64 196101]
[13] Wu M, Wu X, Zeng X C 2010 J. Phys. Chem. C 114 3937
[14] Qiu M, Liew K M 2012 J. Phys. Chem C 116 11709
[15] Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B 82 2889
[16] Wagner P, Ewels C P, Adjizian J J, Magaud L, Pochet P, Roche S 2013 J. Phys. Chem. 117 26790
[17] Li B, Xu D H, Zeng H 2014 Acta Phys. Sin. 63 117102 (in Chinese) [李彪, 徐大海, 曾晖 2014 63 117102]
[18] Song L, Zheng X, Wang R, Zeng Z 2010 J. Phys. Chem. C 114 12145
[19] Cao C, Wu M, Jiang J, Cheng H P 2010 Phys. Rev. B 81 205424
[20] Cocchi C, Prezzi D, Calzolari A, Molinari E 2010 J. Phys. Chem. C 133 124703
[21] Wang D, Zhang Z H, Deng X Q, Fan Z Q 2013 Acta Phys. Sin. 62 207101 (in Chinese) [王鼎, 张振华, 邓小清, 范志强 2013 62 207101]
[22] Jaiswal N K, Srivastava P 2013 Nanotech 12 685
[23] Jaiswal N K, Srivastava P 2011 Solid State Commun. 151 1490
[24] Xiao J, Yang Z X, Xie W T, Xiao L X, Xu H, Ouyang F P 2012 Chin. Phys. B 21 027102
[25] Santos E J, Snchez Portal D, Ayuela A 2010 Phys. Rev. B 81 125433
[26] Longo R C, Carrete J, Ferrer J, Gallego L J 2010 Phys. Rev. B 81 115418
[27] Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B: Condens. Matter. 82 2889
[28] Qiu M, Liew K M 2011 J. Appl. Phys. 110 064319
[29] Landauer R 1970 Philos. Mag. 21 863
[30] Li J, Zhang Z H, Wang D, Zhu Z, Fan Z Q, Tang G P 2014 Carbon 69 142
[31] Zhou Y H, Zeng J, Tang L M, Chen K Q, Hu W P 2013 Org. Electron. 14 2940
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[1] Huertas-Hernando D, Guinea F, Brataas A 2006 Phys. Rev. B 74 155426
[2] Fischer J, Trauzettel B, Loss D2009 Phys. Rev. B 80 155401
[3] Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J 2008 Solid State Commun. 146 351
[4] Kim T W, Gao Y, Acton O, Yip H L, Ma H, Chen H 2010 Appl. Phys. Lett. 97 023310
[5] Obradovic B, Kotlyar R, Heinz F, Matagne P, Rakshit T, Giles M D 2006 Appl. Phys. Lett. 88 14210
[6] Rivero P, Jimenez-Hoyos C A, Scuseria G E 2013 J. Phys. Chem. B 117 12750
[7] Zeng M, Shen L, Zhou M, Zhang C, Feng Y 2011 Phys. Rev. B 83 115427
[8] Ozaki T, Nishio K, Weng H, Kino H 2010 Phys. Rev. B 81 115274
[9] Zeng M, Shen L, Yang M, Zhang C, Feng Y 2011 Appl. Phys. Lett. 98 053101
[10] Ren Y, Chen K Q 2010 J. Appl. Phys. 107 044514
[11] Zhang X J, Chen K Q, Tang L M, Long M Q 2011 Phys. Lett. A 375 3319
[12] Chen Y, Hu H F, Wang X W, Zhang Z J, Cheng C P 2015 Acta Phys.Sin. 64 196101 (in Chinese) [陈鹰, 胡慧芳, 王晓伟, 张照锦, 程彩萍 2015 64 196101]
[13] Wu M, Wu X, Zeng X C 2010 J. Phys. Chem. C 114 3937
[14] Qiu M, Liew K M 2012 J. Phys. Chem C 116 11709
[15] Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B 82 2889
[16] Wagner P, Ewels C P, Adjizian J J, Magaud L, Pochet P, Roche S 2013 J. Phys. Chem. 117 26790
[17] Li B, Xu D H, Zeng H 2014 Acta Phys. Sin. 63 117102 (in Chinese) [李彪, 徐大海, 曾晖 2014 63 117102]
[18] Song L, Zheng X, Wang R, Zeng Z 2010 J. Phys. Chem. C 114 12145
[19] Cao C, Wu M, Jiang J, Cheng H P 2010 Phys. Rev. B 81 205424
[20] Cocchi C, Prezzi D, Calzolari A, Molinari E 2010 J. Phys. Chem. C 133 124703
[21] Wang D, Zhang Z H, Deng X Q, Fan Z Q 2013 Acta Phys. Sin. 62 207101 (in Chinese) [王鼎, 张振华, 邓小清, 范志强 2013 62 207101]
[22] Jaiswal N K, Srivastava P 2013 Nanotech 12 685
[23] Jaiswal N K, Srivastava P 2011 Solid State Commun. 151 1490
[24] Xiao J, Yang Z X, Xie W T, Xiao L X, Xu H, Ouyang F P 2012 Chin. Phys. B 21 027102
[25] Santos E J, Snchez Portal D, Ayuela A 2010 Phys. Rev. B 81 125433
[26] Longo R C, Carrete J, Ferrer J, Gallego L J 2010 Phys. Rev. B 81 115418
[27] Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B: Condens. Matter. 82 2889
[28] Qiu M, Liew K M 2011 J. Appl. Phys. 110 064319
[29] Landauer R 1970 Philos. Mag. 21 863
[30] Li J, Zhang Z H, Wang D, Zhu Z, Fan Z Q, Tang G P 2014 Carbon 69 142
[31] Zhou Y H, Zeng J, Tang L M, Chen K Q, Hu W P 2013 Org. Electron. 14 2940
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