Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substrates

Qi Wei-Jing; Zhang Meng; Pan Shuan; Wang Xiao-Lan; Zhang Jian-Li; Jiang Feng-Yi

doi:10.7498/aps.65.077801

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Qi Wei-Jing, Zhang Meng, Pan Shuan, Wang Xiao-Lan, Zhang Jian-Li, Jiang Feng-Yi. Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substratesJ. Acta Physica Sinica, 2016, 65(7): 077801. DOI: 10.7498/aps.65.077801

Citation:

Qi Wei-Jing, Zhang Meng, Pan Shuan, Wang Xiao-Lan, Zhang Jian-Li, Jiang Feng-Yi. Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substratesJ. Acta Physica Sinica, 2016, 65(7): 077801. DOI: 10.7498/aps.65.077801

Citation:

Qi Wei-Jing, Zhang Meng, Pan Shuan, Wang Xiao-Lan, Zhang Jian-Li, Jiang Feng-Yi. Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substratesJ. Acta Physica Sinica, 2016, 65(7): 077801. DOI: 10.7498/aps.65.077801