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The influences of aluminum doping, oxygen pressure, and substrate temperature on the transparent conductive properties of ZnO:Al (AZO) films grown by pulsed laser deposition (PLD) were investigated using scanning electron microscope, atomic force microscope, X-ray diffraction, Hall effect measurements, and optical transmission spectrum. When the aluminum doping concentration is over 0.5 wt%, all the PLD grown AZO films are degenerated and the aluminum donors are thermal ionized even at a low temperature of 80 K. As a result, the bandgap of AZO film shows blue shifts due to the Bernstein-Moss effect as further confirmed by optical transmission spectrum. The influences of the oxygen pressure and substrate temperature on the transparent conductive property of AZO films were further studied. When the oxygen pressure is 1 Pa and the substrate temperature is 200 ℃, the best conductivity property of AZO thin film is obtained with Hall mobility of 28.8 cm2/V·s and film resistivity of 2.7×10-4 Ω·cm. Moreover, the light transmittance in the visible range exceeds 85%. However, as the oxygen pressure and temperature continue to increase, the film resistivity will increase.
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Keywords:
- pulsed laser deposition /
- ZnO：Al thin film /
- transparency /
- conductivity
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[18] Zhang C, Chen X L, Wang F, Yan C B, Huang Q, ZhaoY, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese) [张翅, 陈新亮, 王斐, 闰聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 61 238101]
[19] Li Y, Tompa G S, Liang S, Gorla C, Lu Y, Doyle J 1997 J. Vac. Sci. Technol. A 15 1063
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[1] Granqvist G C 2007 Sol. Energy Mater. Sol. Cells 91 1529
[2] Fortunato E, Ginley D, Hosono H, Paine C D 2007 MRS Bull. 32 242
[3] Lewis B G, Paine D C 2000 MRS Bull. 25 22
[4] Minami T 2008 Thin Solid Films 516 5822
[5] Cao L,Zhun L P, Jiang J, Zhao R, Ye Z Z, Zhao B H 2011 Sol. Energy Mater. Sol. Cells 5 894
[6] Gondoni P, Ghidell M, Fonzo F D, Russo V, Bruno P, Martí-Rujas J, Bottani E C, Bassi L A, Casari S C 2012 Thin Solid Films 520 4707
[7] Chen Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q, Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese) [陈兆权, 刘明海, 刘玉萍, 陈伟, 罗志清, 胡希伟 2009 58 4260]
[8] Ellmer K 2001 J. Phys. D 34 3097
[9] Bao S Y, Dong W J, Xu X, Luan T B, Li J, Zhang Q Y 2011 Acta Phys. Sin. 60 036804 (in Chinese) [鲍善永, 董武军, 徐兴, 栾田宝, 李杰, 张庆瑜 2011 60 036804]
[10] Yano M, Ogata K,Yan F P, Koki K, Sasa S, Inoue M 2003 Mater. Res. Soc. Symp. Proc. 744 M3.1.1
[11] Agura H, Suzuki A, Matsushita T, Aoki T, Masahiro, Okuda M 2003 Thin Solid Films 445 263
[12] Agashe C, KluthO, Hupkes J, Zastrow U, Rech B, Wuttig M 2004 J. Appl. Phys. 95 1911
[13] Mridha S, Basakk D 2007 J. Phys. D Appl. Phys. 40 6902
[14] Chen C, Ji Y, Gao X Y, Zhao M K, Ma J M, Zhang Z Y, Lu J X 2012 Acta Phys. Sin. 61 036104 (in Chinese) [陈超, 冀勇, 郜小勇, 赵孟珂, 马姣民, 张增院, 卢景霄 2012 61 036104]
[15] Li L N, Chen X L, Wang F, Sun J, Zhang D K, Geng X H, Zhao Y 2011 Acta Phys. Sin. 60 067304 (in Chinese) [李林娜, 陈新亮, 王斐, 孙建, 张德坤, 耿新华, 赵颖 2012 60 067304]
[16] Chen D, L J G, Huang J Y, Jin Y Z, Zhang H X, Ye Z Z 2013 J. Inorg. Mater. 28 649 (in Chinese) [陈丹, 吕建国, 黄靖云, 金豫浙,张昊翔, 叶志镇 2013 无机材料学报 28 649]
[17] Wang G H, Zhao L, Yan B J, Chen J W, Wang G, Diao H W, Wang W J 2013 Chin. Phys. B 22 068102
[18] Zhang C, Chen X L, Wang F, Yan C B, Huang Q, ZhaoY, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese) [张翅, 陈新亮, 王斐, 闰聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 61 238101]
[19] Li Y, Tompa G S, Liang S, Gorla C, Lu Y, Doyle J 1997 J. Vac. Sci. Technol. A 15 1063
[20] Singh V A, Mehra M R, Buthrath N, Wakahara A, Yoshida A 2001 J. Appl. Phys. 90 5661
[21] Park S M, Kegami T I, Ebihara K 2005 Jpn. J. Appl. Phys. 44 8027
[22] Gondoni P,Ghidelli M, Russo V, Bruno P, Martí-Rujas J, Bottani C E, Bassi A L, Casari S C 2012 Thin Solid Films 520 4707
[23] Yoon M H, Lee S H, Park H L, Kim H K, Jang M S 2002 J. Mater. Sci. Lett. 21 1703
[24] Ayadi Z B, Mir L E, Djessas K, Alaya S 2008 Mater. Sci. Eng. C 28 613
[25] Lu J G, Ye Z Z, Zeng Y J, Zhu L P, Wang L, Yuan J, Zhao B H 2006 J. Appl. Phys. 100 073714
[26] Yoshioka S, Oba F, Huang R, Tanaka I, Mizoguchi T, Yamamoto T 2008 J. Appl. Phys. 103 014309
[27] Gu X Q, Zhu L P, Cao L, Ye Z Z, He H P, Chu P K 2011 Mater. Sci. Semicon. Proc. 14 48
[28] Chen M, Pei Z L, Wang X, Sun C, Wen L S 2001 J. Vac. Sci. Technol. A 19 963
[29] Pankove I J 1971 Optical Processes in Semiconductors(New Jersey: Prentice-Hall) pp34–76
[30] Guillen C, Herrero J 2010 Vacuum 84 924
[31] Chang J F, Hon M H 2001 Thin Solid Films 386 79
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