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Single event upset vulnerabilities of static random access memory (SRAM) cells on the micron scale and deep sub-micron scale are characterized and analyzed under ionizing irradiation. Meanwhile, by means of three-dimentional simulation, electrical responses of 6-T SRAM cell with feature size 0.18 μm are calculated when ions are injected into the different central single transistors under the irradiotion with different deposited doses. The simulation results are consistent with the analysis conclusion: the single event upset vulnerability would increase only when the SRAM cell stores the same state as the one stored in the irradiation period.
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Keywords:
- ionizing irradiation /
- single event upset /
- static random access memory /
- device simulation
[1] He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese) [何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍艳, 王祖军 2011 60 056105]
[2] Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹虹, 何宝平, 姚志斌, 张凤祁, 王园明 2009 58 8651]
[3] Knudson A R, Campbell A B, Hammond E C 1983 IEEE Trans. Nucl. Sci. NS-30 4508
[4] Campbell A B, Stapor W J 1984 IEEE Trans. Nucl. Sci. NS-31 1175
[5] He C H, Geng B, Wang Y P, Peng H L, Yang H L, Chen X H, Li G Z 2002 Nucl. Electron. Detect. Technol. 22 228 (in Chinese) [贺朝会, 耿斌, 王燕萍, 彭宏论, 杨海亮, 陈晓华, 李国政 2002 核电子学与探测技术 22 228]
[6] Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A, Hash G L, Ferlet-Cavrois V, Paillet P, Baggio J, Tangyunong P, Blackmore E 2004 IEEE Trans. Nucl. Sci. 51 3692
[7] Schwank J R, Shaneyfelt M R, Felix J A, Dodd P E, Baggio J, Ferlet-Cavrois V, Paillet P, Hash G L, Flores R S, Massengill L W, Blackmore E 2006 IEEE Trans. Nucl. Sci. 53 1772
[8] Koga R, Yu P, Crawford K, George J, Zakrzewski M 2009 IEEE Radiation Effects Data Workshop Quebec, July 20-24, 2009 p127
[9] Bhuva B L, Johnson Jr R L, Gyurcsik R S, Fernald K W, Kerns S E 1987 IEEE Trans. Nucl. Sci. NS-34 1414
[10] Matsukawa T, Kishida A, Tanii T, Koh M, Horita K, Hara K, Shigeta B, Goto M, Matsuda S, Kuboyama S, Ohdomari I 1994 IEEE Trans. Nucl. Sci. 41 2071
[11] Integrated Systems Engineering Inc, 2004 ISE TCAD Release 10.0 DESSIS manual, Switzerland
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[1] He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese) [何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍艳, 王祖军 2011 60 056105]
[2] Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹虹, 何宝平, 姚志斌, 张凤祁, 王园明 2009 58 8651]
[3] Knudson A R, Campbell A B, Hammond E C 1983 IEEE Trans. Nucl. Sci. NS-30 4508
[4] Campbell A B, Stapor W J 1984 IEEE Trans. Nucl. Sci. NS-31 1175
[5] He C H, Geng B, Wang Y P, Peng H L, Yang H L, Chen X H, Li G Z 2002 Nucl. Electron. Detect. Technol. 22 228 (in Chinese) [贺朝会, 耿斌, 王燕萍, 彭宏论, 杨海亮, 陈晓华, 李国政 2002 核电子学与探测技术 22 228]
[6] Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A, Hash G L, Ferlet-Cavrois V, Paillet P, Baggio J, Tangyunong P, Blackmore E 2004 IEEE Trans. Nucl. Sci. 51 3692
[7] Schwank J R, Shaneyfelt M R, Felix J A, Dodd P E, Baggio J, Ferlet-Cavrois V, Paillet P, Hash G L, Flores R S, Massengill L W, Blackmore E 2006 IEEE Trans. Nucl. Sci. 53 1772
[8] Koga R, Yu P, Crawford K, George J, Zakrzewski M 2009 IEEE Radiation Effects Data Workshop Quebec, July 20-24, 2009 p127
[9] Bhuva B L, Johnson Jr R L, Gyurcsik R S, Fernald K W, Kerns S E 1987 IEEE Trans. Nucl. Sci. NS-34 1414
[10] Matsukawa T, Kishida A, Tanii T, Koh M, Horita K, Hara K, Shigeta B, Goto M, Matsuda S, Kuboyama S, Ohdomari I 1994 IEEE Trans. Nucl. Sci. 41 2071
[11] Integrated Systems Engineering Inc, 2004 ISE TCAD Release 10.0 DESSIS manual, Switzerland
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