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Thermal rectification has potential applications in the thermal management of electronics and energy saving. Discovering thermal rectification phenomena and understanding the mechanism are very essential. Reported in this paper is the thermal rectification in silicon nanofilm with triangle holes by the non-equilibrium molecular dynamics simulation. The results show that in the silicon nanofilm with triangle holes, the difference in thermal rectification coefficient is around 28% with the variation of heat flow direction in a temperature range from 300 K to 1100 K. The phonon wave packet dynamic simulations indicate that transverse phonons are generated during the scattering of longitudinal phonons in the nanofilms. When the phonon transport direction is reversed, the average phonon energy transmission coefficient is changed by about 22% in all the frequency range. The difference in phonon transmissity, which is caused by asymmetric structure, is regarded as being attributed mainly to the thermal rectification in silicon film with triangle holes.
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Keywords:
- thermal rectification /
- triangle hole /
- phonon scattering /
- interfacial thermal resistance
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[12] Yue B 2006 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [岳宝 2006 硕士学位论文 (北京：清华大学)]
[13] Sun L 2003 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [孙麟 2003 硕士学位论文 (北京：清华大学)]
[14] Zhang M P, Zhong W R, Ai B Q 2011 Acta Phys. Sin. 60 060511 (in Chinese) [张茂平, 钟伟荣, 艾保全 2011 60 060511]
[15] Zhang J R, Jin Y 2002 Mater. Sci. .Eng. 20 432 (in Chinese) [张九如, 金燕 2002 材料科学与工程 20 432]
[16] Wang J, Li J Y, Zheng Z G 2010 Acta Phys. Sin. 59 476 (in Chinese) [王军, 李京颍, 郑志刚 2010 59 476]
[17] Kobayashi W, Teraoka Y, Terasaki I 2009 Appl. Phys. Lett. 95 171905
[18] Sawaki W, Kobayashi W, Moritomo Y, Terasaki I 2011 Appl. Phys. Lett. 98 081915
[19] Chang C W, Okawa S, Majumdar A, Zettl A 2006 Science 314 1121
[20] Mller-Plathe F 1997 J. Chem. Phys. 106 6082
[21] Schelling P K, Phillpot S R, Keblinski P 2002 Appl. Phys. Lett. 80 2484
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[1] Roberts N A, Walker D G 2011 Int. J. Therm. Sci. 50 648
[2] Terraneo M, Peyrard M, Casati G 2002 Phys. Rev. Lett. 88 094302
[3] Li B W, Wang L, Casati G 2004 Phys. Rev. Lett. 93 184301
[4] Li B W, Lan J H, Wang L 2005 Phys. Rev. Lett. 95 104302
[5] Wang S C, Liang X G 2011 Int. J. Therm. Sci. 50 680
[6] Ju S H, Liang X G, Wang S C 2010 J. Phys. D: Appl. Phys. 43 085407
[7] Hu J N, Ruan X L, Chen Y P 2009 Nano Lett. 9 2730
[8] Yang N, Zhang G, Li B W 2009 Appl. Phys. Lett. 95 033107
[9] Wu G, Li B W 2007 Phys. Rev. B 76 085424
[10] Jiang J W, Wang J S, Li B 2010 Europhys. Lett. 89 46005
[11] Ju S H, Liang X G 2012 J. Appl. Phys. 112 024307
[12] Yue B 2006 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [岳宝 2006 硕士学位论文 (北京：清华大学)]
[13] Sun L 2003 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [孙麟 2003 硕士学位论文 (北京：清华大学)]
[14] Zhang M P, Zhong W R, Ai B Q 2011 Acta Phys. Sin. 60 060511 (in Chinese) [张茂平, 钟伟荣, 艾保全 2011 60 060511]
[15] Zhang J R, Jin Y 2002 Mater. Sci. .Eng. 20 432 (in Chinese) [张九如, 金燕 2002 材料科学与工程 20 432]
[16] Wang J, Li J Y, Zheng Z G 2010 Acta Phys. Sin. 59 476 (in Chinese) [王军, 李京颍, 郑志刚 2010 59 476]
[17] Kobayashi W, Teraoka Y, Terasaki I 2009 Appl. Phys. Lett. 95 171905
[18] Sawaki W, Kobayashi W, Moritomo Y, Terasaki I 2011 Appl. Phys. Lett. 98 081915
[19] Chang C W, Okawa S, Majumdar A, Zettl A 2006 Science 314 1121
[20] Mller-Plathe F 1997 J. Chem. Phys. 106 6082
[21] Schelling P K, Phillpot S R, Keblinski P 2002 Appl. Phys. Lett. 80 2484
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