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Based on the framework of the spin-flip model, the nonlinear dynamics of 1550 nm vertical-cavity surface-emitting laser (VCSEL) subject to polarization-preserved optical feedback is theoretically investigated. The results show that for a free-running 1550 nm-VCSEL, the current value for polarization switching (PS) is affected seriously by the internal parameters; with the increase of the gain anisotropy coefficient γa, the corresponding current for PS increases. Due to the introduction of the polarization-preserved optical feedback, the dominant polarized mode (Y polarized mode) will display different dynamical states for different injection currents while the other mode (X polarized mode) may be excited. As a result, the average output powers of the two polarized modes increase with fluctuation with the increase of current. For different feedback times, the dynamic states of 1550 nm-VCSEL with polarization- preserved optical feedback maybe route into chaos via different evolution paths such as period doubling bifurcation, quasi-periodic bifurcation and intermittent chaos.
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Keywords:
- 1550 nm vertical-cavity surface emitting laser /
- nonlinear dynamics /
- polarization-preserved /
- optical feedback
[1] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. A 52 1728
[2] Regalado J M, Prati F, Miguel M S, Abraham N B 1997 IEEE J. Quantum Electron. 33 765
[3] Wang X F, Xia G Q, Wu Z M 2009 Acta Phys. Sin. 58 4669 (in Chinese) [王小发, 夏光琼, 吴正茂 2009 58 4669]
[4] Yang B X, Xia G Q, Lin X D, Wu Z M 2009 Acta Phys. Sin. 58 1480 (in Chinese) [杨炳星, 夏光琼, 林晓东, 吴正茂 2009 58 1480]
[5] Kuksenkov D V, Temkin H 1997 IEEE J. Quantum Electron. 3 390
[6] Sciamanna M, Panajotov K, Thienpont H, Veretennicoff I, Mégret P, Blondel M 2003 Opt. Lett. 28 1543
[7] Li X F, Pan W, Luo B, Ma D, Deng G 2006 IEE Proc. Optoelectron. 153 67
[8] Robert F, Besnard P, Charés M L, Stéphan G M 1995 Opt. Quantum Electron. 27 805
[9] Zhong D Z, Cao W H, Wu Z M, Xia G Q 2008 Acta Phys. Sin. 57 1548 (in Chinese) [钟东洲, 曹文华, 吴正茂, 夏光琼 2008 57 1548]
[10] Hong Y H, Spencer P S, Shore K A 2004 Opt. Lett. 29 2151
[11] Paul J, Masoller C, Hong Y H, Spencer P S, Shore K A 2007 J. Opt. Soc. Am. B 24 1987
[12] Al-Seyab R, Schires K, Khan N A, Hurtado A, Henning I D, Adams M J 2011 IEEE J. Quantum Electron. 17 1242
[13] Ohtsubo J 2007 Semiconductor Lasers (2nd Edn.) (Berlin: Springer) p67, 237
[14] Torre M, Hurtado A, Quirce A, Valle A, Pesquera L, Adams M J 2011 IEEE J. Quantum Electron. 47 92
[15] Hurtado A, Quirce A, Valle A, Presquera L, Adams M J 2010 Opt. Express 18 9423
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[1] Miguel M S, Feng Q, Moloney J V 1995 Phys. Rev. A 52 1728
[2] Regalado J M, Prati F, Miguel M S, Abraham N B 1997 IEEE J. Quantum Electron. 33 765
[3] Wang X F, Xia G Q, Wu Z M 2009 Acta Phys. Sin. 58 4669 (in Chinese) [王小发, 夏光琼, 吴正茂 2009 58 4669]
[4] Yang B X, Xia G Q, Lin X D, Wu Z M 2009 Acta Phys. Sin. 58 1480 (in Chinese) [杨炳星, 夏光琼, 林晓东, 吴正茂 2009 58 1480]
[5] Kuksenkov D V, Temkin H 1997 IEEE J. Quantum Electron. 3 390
[6] Sciamanna M, Panajotov K, Thienpont H, Veretennicoff I, Mégret P, Blondel M 2003 Opt. Lett. 28 1543
[7] Li X F, Pan W, Luo B, Ma D, Deng G 2006 IEE Proc. Optoelectron. 153 67
[8] Robert F, Besnard P, Charés M L, Stéphan G M 1995 Opt. Quantum Electron. 27 805
[9] Zhong D Z, Cao W H, Wu Z M, Xia G Q 2008 Acta Phys. Sin. 57 1548 (in Chinese) [钟东洲, 曹文华, 吴正茂, 夏光琼 2008 57 1548]
[10] Hong Y H, Spencer P S, Shore K A 2004 Opt. Lett. 29 2151
[11] Paul J, Masoller C, Hong Y H, Spencer P S, Shore K A 2007 J. Opt. Soc. Am. B 24 1987
[12] Al-Seyab R, Schires K, Khan N A, Hurtado A, Henning I D, Adams M J 2011 IEEE J. Quantum Electron. 17 1242
[13] Ohtsubo J 2007 Semiconductor Lasers (2nd Edn.) (Berlin: Springer) p67, 237
[14] Torre M, Hurtado A, Quirce A, Valle A, Pesquera L, Adams M J 2011 IEEE J. Quantum Electron. 47 92
[15] Hurtado A, Quirce A, Valle A, Presquera L, Adams M J 2010 Opt. Express 18 9423
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