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In order to learn the effects of front surface structural defects and back surface thinning process on the InSb chip deformation, its elastic modulus along normal direction is reduced in InSb structural modeling, and based on the typical strain character appearing under thermal shock, the mechanical parameter selection basis is deduced in this paper. Simulation results show that when the out-of-plane elastic modulus of InSb chip is set to be 30 percent Young's modulus, both the maximum Von Mises stress and Z component of strain appear in the N electrode zone, and the extremum values present non-continuous distribution. These are in good agreement with fracture origination zone and crack distribution in the fracture statistics results of 128 128 InSb infrared focal plane array under thermal shock. Besides, the region above the indium bump array is convex upward, and the domain above the isolation trough is concave downward, they are also identical with the scenario of Z component of strain in InSb chip under thermal shock. All these results indicate that the Z component of strain criterion can not only predict both crack origination zone and crack distribution, but also support both Z component of strain distribution in the central region and Z component of strain enhancement effect in the InSb chip N electrode zone.
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Keywords:
- focal plane array /
- InSb /
- structural stress
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[2] Tidrow M Z 2005 Proceedings of SPIE, Bellingham, WA, March 25-28, 2005 p217
[3] Gong H M, Liu D F 2008Infrared Laser Eng. 37 18 (in Chinese) [龚海梅, 刘大福 2008 红外与激光工程 37 18]
[4] Dorn R J, Finger G, Huster G, Lizon J L, Mehrgan H, Meyer M, Stegmeier J, Moorwood A F M 2002 Eur. Southern Observatory. 1 1
[5] Meng Q D, Zhang X L, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 190701 (in Chinese) [孟庆端, 张晓玲, 张立文, 吕衍秋 2012 61 190701]
[6] Liu Y D, Du H Y, Zhang G, Dong S, Ma J S 2005 Laser Infrared. 35 177 (in Chinese) [刘豫东, 杜红燕, 张刚, 董硕, 马莒生 2005 激光与红外 35 177]
[7] Jiun H H, Ahmad I, Jalar A, Omar G 2006 Microelectron. Reliab. 46 836
[8] Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J 2008 J. Mater. Process. Technol. 198 114
[9] Schönfelder S, Ebert M, Bagdahn J 2006 Proceedings of EuroSimE, Como, Italy, April 24-26, 2006 p1
[10] Pandolfi A, Weinberg K 2011 Eng. Fract. Mech. 78 2052
[11] Jiang Y T, Tsao S, O'Sullivan T, Razeghi M, Brown G J 2004 Infrared Phys. Techn. 45 143
[12] He Y, Moreira B E, Overson A, Nakamura S H, Bider C, Briscoe J F 2000 Thermochimica Acta. 357-358 1
[13] White G K, Collins J G 1972 J. Low. Temp. Phys. 7 43
[14] Cheng X, Liu C, Silberschmidt V V 2012 Comp. Mater. Sci. 52 274
[15] Chang R W, Patrick M F 2009 J. Electron. Mater. 38 1855
[16] Pau I, Majeed B, Razeeb K M, Barton J 2006 Acta Mater. 54 3991
[17] Hauck T, Bohm C, Müller W H 2005 Proceedings of EuroSimE, Berlin, Germany, April 18-20, 2005 p242
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[1] He L, Yang D J, Ni G Q 2011 Introduction to Advanced Focal Plane Arrays (1st Ed.) (Beijing: National Defence Industry Press) p1 (in Chinese) [何力, 杨定江, 倪国强 2011 先进焦平面技术导论(第1版) (北京:国防工业出版社) 第1页]
[2] Tidrow M Z 2005 Proceedings of SPIE, Bellingham, WA, March 25-28, 2005 p217
[3] Gong H M, Liu D F 2008Infrared Laser Eng. 37 18 (in Chinese) [龚海梅, 刘大福 2008 红外与激光工程 37 18]
[4] Dorn R J, Finger G, Huster G, Lizon J L, Mehrgan H, Meyer M, Stegmeier J, Moorwood A F M 2002 Eur. Southern Observatory. 1 1
[5] Meng Q D, Zhang X L, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 190701 (in Chinese) [孟庆端, 张晓玲, 张立文, 吕衍秋 2012 61 190701]
[6] Liu Y D, Du H Y, Zhang G, Dong S, Ma J S 2005 Laser Infrared. 35 177 (in Chinese) [刘豫东, 杜红燕, 张刚, 董硕, 马莒生 2005 激光与红外 35 177]
[7] Jiun H H, Ahmad I, Jalar A, Omar G 2006 Microelectron. Reliab. 46 836
[8] Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J 2008 J. Mater. Process. Technol. 198 114
[9] Schönfelder S, Ebert M, Bagdahn J 2006 Proceedings of EuroSimE, Como, Italy, April 24-26, 2006 p1
[10] Pandolfi A, Weinberg K 2011 Eng. Fract. Mech. 78 2052
[11] Jiang Y T, Tsao S, O'Sullivan T, Razeghi M, Brown G J 2004 Infrared Phys. Techn. 45 143
[12] He Y, Moreira B E, Overson A, Nakamura S H, Bider C, Briscoe J F 2000 Thermochimica Acta. 357-358 1
[13] White G K, Collins J G 1972 J. Low. Temp. Phys. 7 43
[14] Cheng X, Liu C, Silberschmidt V V 2012 Comp. Mater. Sci. 52 274
[15] Chang R W, Patrick M F 2009 J. Electron. Mater. 38 1855
[16] Pau I, Majeed B, Razeeb K M, Barton J 2006 Acta Mater. 54 3991
[17] Hauck T, Bohm C, Müller W H 2005 Proceedings of EuroSimE, Berlin, Germany, April 18-20, 2005 p242
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