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CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target. The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.02 Pa of CS2 partial pressure). When sputtering time is 2 h, their thickness are obtained to be 1-2 μm. The CuInS2 films are characterized by EPMA, XRD, and so on. The results show that the optimal CuInS2 films are obtained at a ratio of 1.4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure. The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.9%.
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Keywords:
- chalcopyrite semiconductor /
- reactive sputtering /
- CuInS2 films /
- EPMA
[1] Shay J L, Tell B, Kasper H M, Schiavone L M 1972 Phys. Rev. B 5 5003
[2] Klaer J, Bruns J, Henninger R, Siemer K, Klenk R, Ellmer K, Braunig D 1998 Semiconductor. Sci. Technol. 13 1456
[3] Kobayashi S, Kozakai H, Vequizo R M, Oishi K, Kaneko F 2005 Jpn. J. Appl. Phys. 44 999
[4] Plank, 于丹阳 CN201110362187.6 [2011年11月16日]
[5] Hwang H L, Sun C Y, Fang C S, Chang S D, Cheng C H, Yang M H, Lin H H, Tuwan-mu T 1981 J. Cryst. Growth 55 116
[6] Hwang H L, Cheng C L, Liu L M, Liu Y C, Sun C Y 1980 Thin Solid Films 67 83
[7] Pamplin B, Feigelson R S 1979 Thin Solid Films 60 141
[8] 小林康之, 于丹阳, サリナント M M, 小林敏志, 金子双男, 川上貴浩 信学技報 (Vol.94) (日本新潟市:電子情報通信学会) 1994-09-12 CPM94-56～64
[9] Kittel C 1988 Introduction to Solid State Physics (6th) 宇野良清, 津屋昇, 森田章, 山下次郎共訳1988 (第6版) (日本: 日本丸善株式会社) p1—86
[10] Shay J L, Wernick J H 1975 Ternary Chalcopyrite Semiconductors, Growth, Electrical Properties and Applications (Pergamon Press, 1975)
[11] Kobayashi S, YU D Y, Sarinanto M M, Kobayashi Y, Kaneko F, Kawakami T 1995 Jpn. J. Appl. Phys. 34 L513
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[1] Shay J L, Tell B, Kasper H M, Schiavone L M 1972 Phys. Rev. B 5 5003
[2] Klaer J, Bruns J, Henninger R, Siemer K, Klenk R, Ellmer K, Braunig D 1998 Semiconductor. Sci. Technol. 13 1456
[3] Kobayashi S, Kozakai H, Vequizo R M, Oishi K, Kaneko F 2005 Jpn. J. Appl. Phys. 44 999
[4] Plank, 于丹阳 CN201110362187.6 [2011年11月16日]
[5] Hwang H L, Sun C Y, Fang C S, Chang S D, Cheng C H, Yang M H, Lin H H, Tuwan-mu T 1981 J. Cryst. Growth 55 116
[6] Hwang H L, Cheng C L, Liu L M, Liu Y C, Sun C Y 1980 Thin Solid Films 67 83
[7] Pamplin B, Feigelson R S 1979 Thin Solid Films 60 141
[8] 小林康之, 于丹阳, サリナント M M, 小林敏志, 金子双男, 川上貴浩 信学技報 (Vol.94) (日本新潟市:電子情報通信学会) 1994-09-12 CPM94-56～64
[9] Kittel C 1988 Introduction to Solid State Physics (6th) 宇野良清, 津屋昇, 森田章, 山下次郎共訳1988 (第6版) (日本: 日本丸善株式会社) p1—86
[10] Shay J L, Wernick J H 1975 Ternary Chalcopyrite Semiconductors, Growth, Electrical Properties and Applications (Pergamon Press, 1975)
[11] Kobayashi S, YU D Y, Sarinanto M M, Kobayashi Y, Kaneko F, Kawakami T 1995 Jpn. J. Appl. Phys. 34 L513
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