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Dual-wavelength LEDs with doped quantum well barriers of different doping concentrations are numerically investigated by using the APSYS simulation software. The carrier concentrations, radiative recombination rates, energy band diagrams and spectra are investigated at different doping types and different doping concentrations. The results show that through adjusting the doping concentration of the quantum well barrier a suitable spectrum can be obtained, which will satisfy the need of application. And the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of electrons and holes by doped quantum well barriers.
[1] Damilano B, Demolon P, Brault J, Huault T, Natail F, Massies J 2010 J. Appl. Phys. 108 073115
[2] Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 908
[3] [4] [5] Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[6] [7] Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905 (in Chinese) [邵嘉平, 胡卉, 郭文平, 汪莱, 罗毅, 孙长征, 郝智彪 2005 54 3905]
[8] Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 918
[9] [10] [11] Dalmasso S, Damilano B, Pernot C, Dussaigne A, Byrne D, Grandjean N, Lerous M, Massies J 2002 Phys. Stat. Sol. 192 139
[12] [13] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 App. Phys. Lett. 79 2532
[14] [15] Qi Y D, Liang H, Tang W, Lu Z D, Lau K M 2004 Journal of Crystal Growth 272 333
[16] Gu X L, Guo X, Liang T, Lin Q M, Guo J, Wu D, Xu L H, Shen G D 2007 Acta Phys. Sin. 56 5531 (in Chinese) [顾晓玲, 郭霞, 梁庭, 林巧明, 郭晶, 吴迪, 徐丽华, 沈光地 2007 56 5531]
[17] [18] Zhang Y Y, Fan G H 2011 Acta Phys.Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[19] [20] [21] Zhang Y Y, Fan G H 2011 Acta Phys.Sin. 60 078504 (in Chinese) [张运炎, 范广涵 2011 60 078504]
[22] Yan Q R, Zhang Y, Yan Q A, Shi P P, Zheng S W, Niu Q L, Li S T, Fan G H 2012 Acta Phys. Sin. 61 036103 (in Chinese) [严启荣, 章勇, 闫其昂, 石培培, 郑树文, 牛巧利, 李述体, 范广涵 2012 61 036103]
[23] [24] [25] Crosslight Software Inc http: //www.crosslight.com [February 2, 2010]
[26] [27] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[28] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[29] [30] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[31] [32] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[33] [34] [35] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
[36] Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[37] -
[1] Damilano B, Demolon P, Brault J, Huault T, Natail F, Massies J 2010 J. Appl. Phys. 108 073115
[2] Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 908
[3] [4] [5] Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[6] [7] Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905 (in Chinese) [邵嘉平, 胡卉, 郭文平, 汪莱, 罗毅, 孙长征, 郝智彪 2005 54 3905]
[8] Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 918
[9] [10] [11] Dalmasso S, Damilano B, Pernot C, Dussaigne A, Byrne D, Grandjean N, Lerous M, Massies J 2002 Phys. Stat. Sol. 192 139
[12] [13] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 App. Phys. Lett. 79 2532
[14] [15] Qi Y D, Liang H, Tang W, Lu Z D, Lau K M 2004 Journal of Crystal Growth 272 333
[16] Gu X L, Guo X, Liang T, Lin Q M, Guo J, Wu D, Xu L H, Shen G D 2007 Acta Phys. Sin. 56 5531 (in Chinese) [顾晓玲, 郭霞, 梁庭, 林巧明, 郭晶, 吴迪, 徐丽华, 沈光地 2007 56 5531]
[17] [18] Zhang Y Y, Fan G H 2011 Acta Phys.Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[19] [20] [21] Zhang Y Y, Fan G H 2011 Acta Phys.Sin. 60 078504 (in Chinese) [张运炎, 范广涵 2011 60 078504]
[22] Yan Q R, Zhang Y, Yan Q A, Shi P P, Zheng S W, Niu Q L, Li S T, Fan G H 2012 Acta Phys. Sin. 61 036103 (in Chinese) [严启荣, 章勇, 闫其昂, 石培培, 郑树文, 牛巧利, 李述体, 范广涵 2012 61 036103]
[23] [24] [25] Crosslight Software Inc http: //www.crosslight.com [February 2, 2010]
[26] [27] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[28] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[29] [30] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[31] [32] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[33] [34] [35] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
[36] Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[37]
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