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One-dimensional nanomaterial possesses an electric field reinforcing effect, and its field emission properties have aroused much interest. In this paper, ZnO nanowire (NW) arrays are prepared by the thermal chemical vapor deposition (CVD) method, and the characteristic of field electron emission of ZnO NW arrays under the illumination of ultraviolet light is investigated. It is found that, upon ultraviolet light illumination, the turn-on voltage drops off and emission current increases. A process of field emission coupled with semiconducting properties of ZnO NWs is proposed. Ultraviolet photon-excited electron transition from valence band to conductance band and defect energy levels of ZnO NWs can lead the number of emitting electrons to increase, and the photoemission reduces the effective work function of zinc oxide emitters, which largely enhances the field emission performance. The characteristic of field emission of ZnO NWs under ultraviolet light illumination suggests an approach to tuning field emission of semiconductor emitters, which is promising for the applications in optical sensor, cold-cathode flat panel display and field electron source.
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Keywords:
- ZnO nanowires /
- field electron emission /
- optical coupling enhancement /
- semiconductor emitters
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[1] Pan Z W, Dai Z R, Wang Z L 2001 Science 291 1947
[2] Dai Y, Zhang Y, Bai Y Q 2003 Chem. Phys. Lett. 375 96
[3] Xu S, Wei Y G, Kirkham M 2008 J. Am. Chem. Soc. 130 14958
[4] Zhang X W, Li J B, Li S S 2008 Appl. Phys. Lett. 92 181101
[5] Wang Z L, Song J H 2006 Science 312 242
[6] Wang X D, Song J H, Lin J 2007 Science 316 102
[7] Qin Y, Wang X D, Wang Z L 2008 Nature 451 809
[8] Xu S, Qin Y, Xu C 2010 Nature Nanotechnol. 5 366
[9] Huang M H, Mao S, Feick H 2001 Science 292 1897
[10] Johnson J C, Yan H, Schaller R D 2001 J. Phys. Chem. B 105 11387
[11] Liu C H, Zapien J A, Yao Y 2003 Adv. Mater. 15 838
[12] Kind H, Yan H, Messer B 2002 Adv. Mater. 14 158
[13] Law M, Greene L, Johnson J 2005 Nature Materials 4 455
[14] Huang Y H, Zhang Y, Liu L, Fan S S 2006 J. Nanosci. & Nanotechnol. 6 787
[15] Zhao Q, Zhang H Z, Zhu Y W 2005 Appl. Phys. Lett. 86 203115
[16] Zhu Y W, Zhang H Z, Sun X C 2003 Appl. Phys. Lett. 83 144
[17] Wei A, Sun X W, Xu C X 2006 Appl. Phys. Lett. 88 213102
[18] Wang R C, Liu C P, Huanga J L 2005 Appl. Phys. Lett. 87 013110
[19] Huang Y H, Zhang Y, Gu Y S 2007 J. Phys. Chem. C 111 9039
[20] Kind H, Yan H, Messer B 2002 Adv. Mater. 14 158
[21] Liao L, Liu D H, Li J C 2005 Appl. Surf. Sci. 240 175
[22] Kettel C 2004 Introduction to Solid State Physics 8th ed. (New York: Wiley)
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