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Thermal conductivity is one of the most important physical properties of thin films. Different from two- or three-dimensional measurement structures in most reports, in this work, one-dimensional (1D) two-end supported cantilever beam is provided. The structure of cantilever includes a metal heater (which also serves as a thermometer) and thin film(s) underneath for measurement. 1D heat flow equation is employed to obtain the expression of temperature rise distribution (T(x)) along the cantilever beam and voltage drop changes along the heater (U) when a direct current (DC) follows in the heater. To confirm the correctness of theoretical deduction, ANSYS finite element software is employed to simulate T(x) and U. Results demonstrate that the simulations are in good agreement with the theoretic calculations obtained from expressions of T(x) and U. Compared with conventional 3-times frequency (3 ) method, the DC method with 1D cantilever beam is relatively simple and accurate.
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Keywords:
- heat transfer /
- thermal conductivities of thin films /
- ANSYS
[1] Kruse P W, Skatrud D D 1997 Uncooled Infrared Imaging Arrays and Systems (1st Ed.) (San Diego: Academic Press) pp17--75
[2] Greenspan J 1998 MS Dissertation (Montreal: McGill University)
[3] Sberveglieri G, Hellmich W, Muller G 1997 Microsyst. Technol. 3 183
[4] Eaton W P, Smith J H 1997 Smart Mater. Struct. 6 530
[5] Yang J, Zhang J, Zhang H, Zhu Y 2010 Rev. Sci. Instrum. 81 114902
[6] Zhang Y L, Hapenciuc C L, Castillo, Borca-Tasciuc T, Mehta R J, Karthik C, Ramanath G 2010 Appl. Phys. Lett. 96 062107
[7] Mavrokefalos A, Pettes M T, Zhou F, Shi L 2007 Rev. Sci. Instrum. 78 034901
[8] Jain A, Goodson K E 2008 J. Heat Transfer 130 102402
[9] Paul O, Ruther P, Plattner L, Baltes H 2000 IEEE Trans. Semicond. Manuf. 13 159
[10] Volklein F 1990 Thin Solid Films 188 27
[11] Arx M, Paul O, Baltes H 2000 J. Microelectromech. Syst. 9 136
[12] Cahill D G, Fischer H E, Klitsner T, Swartz E T, Pohl R O 1989 J. Vac. Sci. Technol. A 7 1259
[13] Mastrangelo C H, Tai Y C, Muller R S 1990 Sensors and Actuators A 21-23 856
[14] Cahill D G 1990 Rev. Sci. Instrum. 61 802
[15] Eriksson P, Anderson J Y, Stemme G 1997 J. Microelectromech. Syst. 6 55
[16] Sultan R, Avery A D, Stiehl G, Zink B L 2009 J. Appl. Phys. 105 043501
[17] Yamane T, Nagai N, Katayama S, Todoki M 2002 J. Appl. Phys. 91 9772
[18] Qiu L, Wang D W, Zheng X H, Su G P 2011 Rev. Sci. Instrum. 82 045106
[19] Benard W L, Kahn H, Heuer A H, Huff M 1998 J. Microelectromech. Syst. 7 245
[20] Brand O, Fedder G K, (translated by Huang Q A, Qin M) 2007 CMOS MEMS Technology and Applications (Nanjing: Southeast University Press) pp62--119 (in Chinese) [Brand O, Fedder G K, (黄庆安, 秦明译) CMOS MEMS 技术与应用 (南京: 东南大学出版社) 第62---119页]
[21] Zhu X Y 2007 College Physics Experiment Course (1st Ed.) (Beijing: Science Press) pp311--313 (in Chinese) [朱孝义 2007 大学物理实验教程(第一版) (北京: 科学出版社) 第311---313页]
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[1] Kruse P W, Skatrud D D 1997 Uncooled Infrared Imaging Arrays and Systems (1st Ed.) (San Diego: Academic Press) pp17--75
[2] Greenspan J 1998 MS Dissertation (Montreal: McGill University)
[3] Sberveglieri G, Hellmich W, Muller G 1997 Microsyst. Technol. 3 183
[4] Eaton W P, Smith J H 1997 Smart Mater. Struct. 6 530
[5] Yang J, Zhang J, Zhang H, Zhu Y 2010 Rev. Sci. Instrum. 81 114902
[6] Zhang Y L, Hapenciuc C L, Castillo, Borca-Tasciuc T, Mehta R J, Karthik C, Ramanath G 2010 Appl. Phys. Lett. 96 062107
[7] Mavrokefalos A, Pettes M T, Zhou F, Shi L 2007 Rev. Sci. Instrum. 78 034901
[8] Jain A, Goodson K E 2008 J. Heat Transfer 130 102402
[9] Paul O, Ruther P, Plattner L, Baltes H 2000 IEEE Trans. Semicond. Manuf. 13 159
[10] Volklein F 1990 Thin Solid Films 188 27
[11] Arx M, Paul O, Baltes H 2000 J. Microelectromech. Syst. 9 136
[12] Cahill D G, Fischer H E, Klitsner T, Swartz E T, Pohl R O 1989 J. Vac. Sci. Technol. A 7 1259
[13] Mastrangelo C H, Tai Y C, Muller R S 1990 Sensors and Actuators A 21-23 856
[14] Cahill D G 1990 Rev. Sci. Instrum. 61 802
[15] Eriksson P, Anderson J Y, Stemme G 1997 J. Microelectromech. Syst. 6 55
[16] Sultan R, Avery A D, Stiehl G, Zink B L 2009 J. Appl. Phys. 105 043501
[17] Yamane T, Nagai N, Katayama S, Todoki M 2002 J. Appl. Phys. 91 9772
[18] Qiu L, Wang D W, Zheng X H, Su G P 2011 Rev. Sci. Instrum. 82 045106
[19] Benard W L, Kahn H, Heuer A H, Huff M 1998 J. Microelectromech. Syst. 7 245
[20] Brand O, Fedder G K, (translated by Huang Q A, Qin M) 2007 CMOS MEMS Technology and Applications (Nanjing: Southeast University Press) pp62--119 (in Chinese) [Brand O, Fedder G K, (黄庆安, 秦明译) CMOS MEMS 技术与应用 (南京: 东南大学出版社) 第62---119页]
[21] Zhu X Y 2007 College Physics Experiment Course (1st Ed.) (Beijing: Science Press) pp311--313 (in Chinese) [朱孝义 2007 大学物理实验教程(第一版) (北京: 科学出版社) 第311---313页]
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