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It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10300 K) and magnetic susceptibility (5300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function \exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnxTe monocrystal.
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Keywords:
- magnetic semiconductors /
- negative magnetoresistance /
- paramagnetic enhancement /
- spin splitting
[1] Furdyna J K 1982 J. Vac. Sci. Technol. 21 220
[2] Rogalski A 1991 Infrared Phys. 31 117
[3] Becla P 1988 J. Vac. Sci. Technol. A 6 2725
[4] Becla P 1993 Proc. SPIE 2021 22
[5] Piotrowski J, Rogalski A 2004 Infrared Phys. Technol. 46 115
[6] Anderson J R, Görska R M, Azevedo L J, Venturini E L 1986 Phys. Rev. B 33 4706
[7] Nagata S, Galazka R R, Mullin D P, Akbarzadeh H, Khattak G D, Furdyna J K, Keesom P H 1980 Phys. Rev. B 22 3331
[8] Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温, 介万奇 2007 56 1141]
[9] Wojtowicz T, Mycielski A 1983 Physica B 117---118 476
[10] Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508
[11] Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419
[12] Dillon J F, Furdyna J K, Debska U, Mycielski A 1990 J. Appl. Phys. 67 4917
[13] Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510
[14] Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321
[15] Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328
[16] Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802
[17] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 53 1977]
[18] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 55 2955]
[19] Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187
[20] Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931
[21] Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799
[22] Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209
[23] Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264
[24] Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761
[25] Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679
[26] Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57
[27] Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344
[28] Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407
[29] Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210
[30] Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781
[31] Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]
[32] Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918
[33] Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579
[34] Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388
[35] Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]
[36] Dietl T, Spalek J 1983 Phys. Rev. B 28 1548
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[1] Furdyna J K 1982 J. Vac. Sci. Technol. 21 220
[2] Rogalski A 1991 Infrared Phys. 31 117
[3] Becla P 1988 J. Vac. Sci. Technol. A 6 2725
[4] Becla P 1993 Proc. SPIE 2021 22
[5] Piotrowski J, Rogalski A 2004 Infrared Phys. Technol. 46 115
[6] Anderson J R, Görska R M, Azevedo L J, Venturini E L 1986 Phys. Rev. B 33 4706
[7] Nagata S, Galazka R R, Mullin D P, Akbarzadeh H, Khattak G D, Furdyna J K, Keesom P H 1980 Phys. Rev. B 22 3331
[8] Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温, 介万奇 2007 56 1141]
[9] Wojtowicz T, Mycielski A 1983 Physica B 117---118 476
[10] Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508
[11] Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419
[12] Dillon J F, Furdyna J K, Debska U, Mycielski A 1990 J. Appl. Phys. 67 4917
[13] Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510
[14] Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321
[15] Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328
[16] Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802
[17] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 53 1977]
[18] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 55 2955]
[19] Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187
[20] Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931
[21] Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799
[22] Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209
[23] Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264
[24] Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761
[25] Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679
[26] Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57
[27] Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344
[28] Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407
[29] Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210
[30] Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781
[31] Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]
[32] Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918
[33] Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579
[34] Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388
[35] Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]
[36] Dietl T, Spalek J 1983 Phys. Rev. B 28 1548
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