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In this paper, the piezoresistive effect of the multiwalled carbon nanotube (MWCNT) film is studied. Carbon nanotubes are synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the MWCNT film is studied by a three-point bending test. The gauge factor of the MWCNT film under 500 microstrain is found to be at most 120 at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in MWCNT film is also discussed.
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Keywords:
- piezoresistive effect /
- carbon nanotubes /
- gauge factor
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[2] Zhang Z X§Hou S M§Zhao X Y, Zhang H, Sun J P, Liu W M,Xue Z Q, Shi Z J, Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥, 侯士敏, 赵兴钰, 张浩, 孙建平, 刘惟敏, 薛增泉,施祖进, 顾镇南 2002 51 434]
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[22] Kaiser A B 1989 Phys. Rev. B 40 2806
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[1] Lijima S 1991 Nature 358 56
[2] Zhang Z X§Hou S M§Zhao X Y, Zhang H, Sun J P, Liu W M,Xue Z Q, Shi Z J, Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥, 侯士敏, 赵兴钰, 张浩, 孙建平, 刘惟敏, 薛增泉,施祖进, 顾镇南 2002 51 434]
[3] Wang Y J§Wang L D§Yang M, Yan C, Wang X D, Xi C P, Li SN 2011 Acta Phys. Sin. 60 077303 (in Chinese) [王益军, 王六定, 杨敏, 严诚, 王小冬, 席彩萍, 李邵宁 2011 60 077303]
[4] Liu H, Yin H J, Xia S N 2009 Acta Phys. Sin. 58 8489 (in Chinese) [刘红, 印海建, 夏树宁 2009 58 8489]
[5] Gaal R, Salvetat J P, Forro L 2000 Phys. Rev. B 61 7320
[6] Bozhko A D, Sklovsky D E, Nalimova V A, Rinzler A G, SmalleyR E, Fischer J E 1998 Appl. Phys. A: Mater. Sci. Process 67 75
[7] Tombler T W, Zhou C, Alexseyev L, Kong J, Dai H, Liu L, JayanthiS C, Tang M, Wu S Y 2000 Nature 405 769
[8] Paulson S, Falvo M R, Snider N 1999 Appl. Phys. Lett. 75 2936
[9] Fang L, Wang W L, Ding P D, Liao K J, Wang J 1999 J. Appl.Phys. 86 5185
[10] Wang W L, Jiang X, Taube K, Klages C P 1997 J. Appl. Phys. 82729
[11] Rueckers T, Kim K, Joselevich E, Tseng G Y, Cheung C L, LieberC M 2000 Science 289 94
[12] WangWL, Liao K J, Feng B, Sanchez G, PoloMC, Esteve J 1998Diam. Relat. Mater. 7 528
[13] Cao P J, Gu Y S, Liu F, Liu H W, Zhang Q F, Wang Y G, Gao H J2004 Acta Phys. Sin. 53 854 (in Chinese) [曹培江,顾有松, 刘飞, 刘虹雯, 张琦锋, 王岩国, 高鸿钧 2004 53 854]
[14] Wu Z H, Wang W L, Liao K J, Wang Y T, Hu C G, Fu G Z, WanB Y, Yu P 2004 Acta Phys. Sin. 53 3462 (in Chinese) [吴子华,王万录, 廖克俊, 王永田, 胡陈果, 付光宗, 万步勇, 余鹏 2004 53 3462]
[15] Jin L, Bower C, Zhou O 1998 Appl. Phys. Lett. 73 1197
[16] Shui X P, Chung D L 1995 Smart Mater. Struct. 5 243
[17] Kazaoui S, Minami N, Jacquemin R, Kataura H, Achiba Y 1999Phys. Rev. B 60 13339
[18] He Y L, Lin H Y, Wu X H, Yu M B, Yu X M, Wang H, Li C 1996Chinese Journal of Materials Researc H 10 33 (in Chinese) [何宇亮, 林鸿溢, 武旭辉, 余明斌, 于晓梅, 王珩, 李冲 1996材料研究导报 10 33]
[19] Wang W L, Zhang Z G, Liao K J, Wu B, Zhang S B, Liao M Y1997 Chinese J. Semiconductors 1997 18 474 (in Chinese) [王万录, 张振刚, 廖克俊, 吴彬, 张世斌, 廖梅勇 1997 半导体学报 18 474]
[20] Jang JW, Lee D K, Lee C E, Lee T J, Lee C J, Noh S J 2002 SolidState Communications 122 619
[21] Bachtold A, Jonge M D, Grove R K, McEuen P L, Buitelaar M,Schonenberger C 2001 Phys. Rev. Lett. 87 166801
[22] Kaiser A B 1989 Phys. Rev. B 40 2806
[23] Kaiser A B, Dusberg G, Roth S 1998 Phys. Rev. B 57 1418
[24] Kaiser A B, Flanagan G U, Stewart D M, Beaglehole D 2001 SyntheticMetals 117 67
[25] Kim G T, Burghard M, Suh D S, Liu K, Park J G, Roth S, Park YW 1999 Synthetic Metals 105 207
[26] Yoon Y G, Mazzoni M S C, Choi H J, Ihm J, Louie S G 2001Phys. Rev. Lett. 86 688
[27] Buldum A, Lu J P 2001 Phys. Rev. B 63 161403
[28] FuhrerMS, Nygard J, Shih L, Forero M, Yoon Y G, MazzoniMSC, Choi H J, Ihm J, Louie S G, Zettl A, McEuen P L 2000 Science288 494
[29] Liu K, Avouris Ph, Martel R, Hsu W K 2001 Phys. Rev. B 63161404
[30] Hertel T, Walkup R E, Avouris P 1998 Phys. Rev. B 58 13870
[31] Stahl H, Appenzeller J, Martel R, Avouris Ph, Lengeler B 2000Phys. Rev. Lett. 85 5186
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