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The Co and/or Sn doped ZnO thin films are deposited on the glass substrates by the sol-gel method. The effects of Co and/or Sn doping on surface morphologies and mircrostructures of ZnO films are investigated by metallurgical microscope and X-ray diffraction (XRD). The XRD results indicate that all the ZnO samples show preferential orientation along the (002) direction, and that the Sn-doped ZnO thin film exhibits the best c-axis orientation and largest grain size. XPS results reveal that Co and Sn elements exist as Co2+ and Sn4+, indicating that Co and Sn ions have entered into the ZnO crystal lattices successfully. Strong blue double emission and weak green emission are observed in the PL spectra of all the samples. In addition, the ultraviolet peaks appear in the undoped and the Co-doped ZnO thin films. Our results reveal that the Co and/or Sn doping can tune the band gap, meanwhile, such a doping can also affect oxygen dislocation, zinc oxygen and zinc interstial defect concentrations. Finally, the possible luminescence mechanisms of Co and/or Sn doped ZnO films are discussed.
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Keywords:
- ZnO thin films /
- sol-gel /
- doping /
- photoluminescence
[1] Rodgriguez J A, Jirsak T, Dvorak J, Sambasivan S, Fischer D 2000 J. Phys. Chem. B 104 319
[2] Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399
[3] Zhang X J, Ma H L, Li Y X, Wang Q P, Ma J, Zong F J, Xiao H D 2006 Chin. Phys. 15 2385
[4] Cao H, Xu J Y, Zhang D Z, Chang S H, Ho S X, Seelig E W, Liu X, Chang R P H 2000 Phys. Revl. Lett. 84 5584
[5] Li Y, Meng G W, Zhang L D, Phillipp F 2000 Appl. Phys. Lett. 76 2011
[6] Jiao S J, Lü Y M, Shen D Z, Zhang Z Z, Li B H, Zhang J Y, Zhao D X 2006 Chin. J. Lumin 27 499 (in Chinese) [矫淑杰、吕有明、申德振、张振中、李炳辉、张吉英、 赵东旭 2006 发光学报 27 499]
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[8] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440 (in Chinese) [沈益斌、周 勋、徐 明、丁迎春、段满益、令狐荣锋、祝文军 2007 56 3440]
[9] Gong M G, Xu X L, Yang Z, Liu Y S, Liu L 2010 Chin. Phys. B 19 056701
[10] Duan M Y, Xu M, Zhou H P, Shen Y B, Chen Q Y, Ding Y C, Zhu W J 2007 Acta Phys. Sin. 56 5359 (in Chinese) [段满益、徐 明、周海平、沈益斌、陈青云、丁迎春、祝文军 2007 56 5359]
[11] Liu B, Wu Y S, Wu L L, Tian F, Dou Z W, Mao H Z 2008 Chin. J. Lumin 29 532 (in Chinese) [刘 宝、吴佑实、吴莉莉、田 芳、窦珍伟、毛宏志 2008 发光学报 29 532]
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[13] Wen J, Chen C L 2008 Journal of Sichuan Normal University (Natural Science) 31 732 (in Chinese) [文 军、陈长乐 2008 四川师范大学学报(自然科学版) 31 732]
[14] Wang D Y, Gao S X, Li G, Zhao M 2010 Acta Phys. Sin. 59 3473 (in Chinese) [王德义、高书霞、李 刚、赵 鸣 2010 59 3473]
[15] Xu M, Zhao H, Ostrikov K, Duan M Y, Xu L X 2009 J. Appl. Phys. 105 043708
[16] Hu Z G, Duan M Y, Xu M, Zhou X, Chen Q Y, Dong C J, Linghu R F 2009 Acta Phys. Sin. 58 1166 (in Chinese) [胡志刚、段满益、徐 明、周 勋、陈青云、董成军、令狐荣峰 2009 58 1166]
[17] Vaezi M R, Sadrnezhaad S K 2007 Materials and Design 28 1065
[18] Bougrine A, El Hichou A, Addou M, Ebothe J, Kachouane A, Troyon M 2003 Materials Chemistry and Physics 80 438
[19] Holmelund E, Schou J, Tougaard S, Larsen N B 2002 Appl. Surf. Sci. 197 467
[20] Guo J L, Chang Y Q, Wang M W, Lu Y D, Long Y 2009 Functional Materials 40 332 (in Chinese) [郭佳林、常勇勤、王明文、陆映东、龙 毅 2009 功能材料 40 332]
[21] Meng H, Wang C 2007 Chinese Journal of Semiconductors 28 267 (in Chinese) [孟 慧、王 聪 2007 半导体学报 28 267]
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[23] Wu D C, Hu Z G, Duan M Y, Xu L X, Liu F S, Dong C J, Wu Y N, Ji H X, Xu M 2009 Acta Phys. Sin. 58 7261 (in Chinese) [吴定才、胡志刚、段满益、徐禄祥、刘方舒、董成军、吴艳南、纪红萱、徐 明 2009 58 7261]
[24] Wang Q P, Zhang D H, Ma H L, Zhang X H, Zhang X J 2003 Appl. Surf. Sci. 220 12
[25] Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞、傅竹西、贾云波、廖桂红 2001 50 2208]
[26] Posada E, Tobin G, McGlynn E, Lunney J G 2003 Appl. Surf. Sci. 208 589
[27] Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Sci. Chin. Ser. A 31 358 (in Chinese) [徐彭寿、孙玉明、施朝淑、徐法强、潘海斌 2001 中国科学, A辑 31 358]
[28] Liu J D, Wang Y H 2010 Acta Phys. Sin. 59 3558 (in Chinese) [刘吉地、王育华 2010 59 3558]
[29] Zhao Y Z, Chen C L, Gao G M, Yang X G, Yuan X, Song Z M 2006 Acta Phys. Sin. 55 3132 (in Chinese) [赵跃智、陈长乐、高国棉、杨晓光、袁 孝、宋宙模 2006 55 3132]
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[1] Rodgriguez J A, Jirsak T, Dvorak J, Sambasivan S, Fischer D 2000 J. Phys. Chem. B 104 319
[2] Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399
[3] Zhang X J, Ma H L, Li Y X, Wang Q P, Ma J, Zong F J, Xiao H D 2006 Chin. Phys. 15 2385
[4] Cao H, Xu J Y, Zhang D Z, Chang S H, Ho S X, Seelig E W, Liu X, Chang R P H 2000 Phys. Revl. Lett. 84 5584
[5] Li Y, Meng G W, Zhang L D, Phillipp F 2000 Appl. Phys. Lett. 76 2011
[6] Jiao S J, Lü Y M, Shen D Z, Zhang Z Z, Li B H, Zhang J Y, Zhao D X 2006 Chin. J. Lumin 27 499 (in Chinese) [矫淑杰、吕有明、申德振、张振中、李炳辉、张吉英、 赵东旭 2006 发光学报 27 499]
[7] Yang J J, Fang Q Q, Wang B M, Wang C P, Zhou J, Li Y, Liu Y M, Lü Q R 2007 Acta Phys. Sin. 56 1116 (in Chinese) [杨景景、方庆清、王保明、王翠平、周 军、李 雁、刘艳美、吕庆荣 2007 56 1116]
[8] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440 (in Chinese) [沈益斌、周 勋、徐 明、丁迎春、段满益、令狐荣锋、祝文军 2007 56 3440]
[9] Gong M G, Xu X L, Yang Z, Liu Y S, Liu L 2010 Chin. Phys. B 19 056701
[10] Duan M Y, Xu M, Zhou H P, Shen Y B, Chen Q Y, Ding Y C, Zhu W J 2007 Acta Phys. Sin. 56 5359 (in Chinese) [段满益、徐 明、周海平、沈益斌、陈青云、丁迎春、祝文军 2007 56 5359]
[11] Liu B, Wu Y S, Wu L L, Tian F, Dou Z W, Mao H Z 2008 Chin. J. Lumin 29 532 (in Chinese) [刘 宝、吴佑实、吴莉莉、田 芳、窦珍伟、毛宏志 2008 发光学报 29 532]
[12] Shan F K, Kim B I, Liu G X, Liu Z R, Sohn J Y, Lee W J, Shin B C, Yu Y S 2004 J. Appl. Phys. 95 4772
[13] Wen J, Chen C L 2008 Journal of Sichuan Normal University (Natural Science) 31 732 (in Chinese) [文 军、陈长乐 2008 四川师范大学学报(自然科学版) 31 732]
[14] Wang D Y, Gao S X, Li G, Zhao M 2010 Acta Phys. Sin. 59 3473 (in Chinese) [王德义、高书霞、李 刚、赵 鸣 2010 59 3473]
[15] Xu M, Zhao H, Ostrikov K, Duan M Y, Xu L X 2009 J. Appl. Phys. 105 043708
[16] Hu Z G, Duan M Y, Xu M, Zhou X, Chen Q Y, Dong C J, Linghu R F 2009 Acta Phys. Sin. 58 1166 (in Chinese) [胡志刚、段满益、徐 明、周 勋、陈青云、董成军、令狐荣峰 2009 58 1166]
[17] Vaezi M R, Sadrnezhaad S K 2007 Materials and Design 28 1065
[18] Bougrine A, El Hichou A, Addou M, Ebothe J, Kachouane A, Troyon M 2003 Materials Chemistry and Physics 80 438
[19] Holmelund E, Schou J, Tougaard S, Larsen N B 2002 Appl. Surf. Sci. 197 467
[20] Guo J L, Chang Y Q, Wang M W, Lu Y D, Long Y 2009 Functional Materials 40 332 (in Chinese) [郭佳林、常勇勤、王明文、陆映东、龙 毅 2009 功能材料 40 332]
[21] Meng H, Wang C 2007 Chinese Journal of Semiconductors 28 267 (in Chinese) [孟 慧、王 聪 2007 半导体学报 28 267]
[22] Li H, Wang W, Jiang G S 2008 Chinese Journal of Spectroscopy Laboratory 25 742 (in Chinese) [李 惠、汪 雯、江国顺 2008 光谱实验室 25 742]
[23] Wu D C, Hu Z G, Duan M Y, Xu L X, Liu F S, Dong C J, Wu Y N, Ji H X, Xu M 2009 Acta Phys. Sin. 58 7261 (in Chinese) [吴定才、胡志刚、段满益、徐禄祥、刘方舒、董成军、吴艳南、纪红萱、徐 明 2009 58 7261]
[24] Wang Q P, Zhang D H, Ma H L, Zhang X H, Zhang X J 2003 Appl. Surf. Sci. 220 12
[25] Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞、傅竹西、贾云波、廖桂红 2001 50 2208]
[26] Posada E, Tobin G, McGlynn E, Lunney J G 2003 Appl. Surf. Sci. 208 589
[27] Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Sci. Chin. Ser. A 31 358 (in Chinese) [徐彭寿、孙玉明、施朝淑、徐法强、潘海斌 2001 中国科学, A辑 31 358]
[28] Liu J D, Wang Y H 2010 Acta Phys. Sin. 59 3558 (in Chinese) [刘吉地、王育华 2010 59 3558]
[29] Zhao Y Z, Chen C L, Gao G M, Yang X G, Yuan X, Song Z M 2006 Acta Phys. Sin. 55 3132 (in Chinese) [赵跃智、陈长乐、高国棉、杨晓光、袁 孝、宋宙模 2006 55 3132]
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