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The structure, the martensitic transformation and the magnetic properties of ferromagnetic shape memory alloy Mn2NiGa aged at low temperature are investigated. The lattice distortion and the internal stress are generated in the samples due to the fine precipitation generated during the aging treatment. When the precipitation concentration exceeds the tolerance limit of the parent phase lattice, it causes the martensitic transformation temperature to increase obviously, and thus the parent phase transforms to martensitic phase with a large coercivity up to 900 Oe. Because of the existence of internal stress, the reverse martensitic transformation is shifted toward high temperature up to 485 K. By extrapolating the experimental data, the Curie temperature of martensite is estimated at 530 K. The internal stress disappears and the martensite turns to be of the parent phase due to the coarsening of the precipitation at higher temperature. Two coarsening threshold temperatures are found to be 423 K and 485 K which are the temperature sensitive and the aging time sensitive, respectively.
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Keywords:
- ferromagnetic shape memory alloys /
- Mn2NiGa /
- aging effect /
- internal stress
[1] Ullakko K, Huang J K, Kantner C, Ohandley R C, Kokorin V V 1996 Appl. Phys. Lett. 69 1966
[2] O'Handley R C, Murray S J, Marioni M, Nembach H, Allen S M 2000 J. Appl. Phys. 87 4712
[3] Murray S J, Marioni M, Allen S M, O'Handley R C, Lograsso T A 2000 Appl. Phys. Lett. 77 886
[4] Xu G L, Chen J D, Chen D, Ma J Z, Yu B H, Shi D H 2009 Chin. Phys. B 18 744
[5] Meng F B, Guo H J, Liu G D, Liu H Y, Dai X F, Luo H Z, Li Y X, Chen J L, Wu G H 2009 Chin. Phys. B 18 3031
[6] Liu Z H, Zhang M, Cui Y T, Zhou Y Q, Wang W H, Wu G H, Zhang X X, Xiao G 2003 Appl. Phys. Lett. 82 424
[7] Wuttig M, Li J, Craciunescu C 2001 Scr. Mater. 44 2393
[8] Oikawa K, Wulff L, Iijima T, Gejima F, Ohmori T, Fujita A, Fukamichi K, Kainuma R, Ishida K 2001 Appl. Phys. Lett. 79 3290
[9] Sutou Y, Imano Y, Koeda N, Omori T, Kainuma R, Ishida K, Oikawa K 2004 Appl. Phys. Lett. 85 4358
[10] Liu G D, Chen J L, Liu Z H, Dai X F, Wu G H, Zhang B, Zhang X X 2005 Appl. Phys. Lett. 87 262504
[11] Cai W, Zhang J, Gao Z Y, Sui J H 2008 Appl. Phys. Lett. 92 252502
[12] Liu G D, Dai X F, Yu S Y, Zhu Z Y, Chen J L, Wu G H, Zhu H, Xiao J Q 2006 Phys. Rev. B 74 054435
[13] Barman S R, Banik S, Shukla A K, Kamal C, Chakrabarti A 2007 Epl 80 57002
[14] Qian Z N, Sui Y, Liu Y Q, Lu Z H, Lu G D, Zhang M, Cui Y T, Chen J L, Wu G H 2003 Acta Phys. Sin. 52 2304(in Chinese) [刘国栋、王新强、代学芳、柳祝红、于淑云、陈京兰、吴光恒 2003 52 2304]
[15] Wang W H, Liu Z H, Zhang J, Chen J L, Wu G H, Zhan W S, Chin T S, Wen G H, Zhang X X 2002 Phys. Rev. B 66 052411
[16] Li M, Zhu Z Y, Yu S D, Cui Q L, Zhou Q, Chen J L, Wu G H 2009 Acta Phys. Sin. 58 3479(in Chinese) [马 丽、朱志永、李 敏、于世丹、崔启良、周 强、陈京兰、吴光恒 2009 58 3497]
[17] Tao J, Yao Z J, Xue F 2006 Fundamentals of Materials Science (Beijing: Chemical Industry Press) p299 (in Chinese) [陶杰、姚正军、薛烽 2006 材料科学基础 (北京:化学工业出版社) 第299页]
[18] Popovic S, Grzeta B, Ilakovac V, Kroggel R, Wendrock G, Loffler H 1992 Phys. Stat. Sol. (a) 130 273
[19] Popovic S, Grzeta B, Loffler H, Wendrock G 1993 Phys. Stat. Sol. (a) 140 341
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[1] Ullakko K, Huang J K, Kantner C, Ohandley R C, Kokorin V V 1996 Appl. Phys. Lett. 69 1966
[2] O'Handley R C, Murray S J, Marioni M, Nembach H, Allen S M 2000 J. Appl. Phys. 87 4712
[3] Murray S J, Marioni M, Allen S M, O'Handley R C, Lograsso T A 2000 Appl. Phys. Lett. 77 886
[4] Xu G L, Chen J D, Chen D, Ma J Z, Yu B H, Shi D H 2009 Chin. Phys. B 18 744
[5] Meng F B, Guo H J, Liu G D, Liu H Y, Dai X F, Luo H Z, Li Y X, Chen J L, Wu G H 2009 Chin. Phys. B 18 3031
[6] Liu Z H, Zhang M, Cui Y T, Zhou Y Q, Wang W H, Wu G H, Zhang X X, Xiao G 2003 Appl. Phys. Lett. 82 424
[7] Wuttig M, Li J, Craciunescu C 2001 Scr. Mater. 44 2393
[8] Oikawa K, Wulff L, Iijima T, Gejima F, Ohmori T, Fujita A, Fukamichi K, Kainuma R, Ishida K 2001 Appl. Phys. Lett. 79 3290
[9] Sutou Y, Imano Y, Koeda N, Omori T, Kainuma R, Ishida K, Oikawa K 2004 Appl. Phys. Lett. 85 4358
[10] Liu G D, Chen J L, Liu Z H, Dai X F, Wu G H, Zhang B, Zhang X X 2005 Appl. Phys. Lett. 87 262504
[11] Cai W, Zhang J, Gao Z Y, Sui J H 2008 Appl. Phys. Lett. 92 252502
[12] Liu G D, Dai X F, Yu S Y, Zhu Z Y, Chen J L, Wu G H, Zhu H, Xiao J Q 2006 Phys. Rev. B 74 054435
[13] Barman S R, Banik S, Shukla A K, Kamal C, Chakrabarti A 2007 Epl 80 57002
[14] Qian Z N, Sui Y, Liu Y Q, Lu Z H, Lu G D, Zhang M, Cui Y T, Chen J L, Wu G H 2003 Acta Phys. Sin. 52 2304(in Chinese) [刘国栋、王新强、代学芳、柳祝红、于淑云、陈京兰、吴光恒 2003 52 2304]
[15] Wang W H, Liu Z H, Zhang J, Chen J L, Wu G H, Zhan W S, Chin T S, Wen G H, Zhang X X 2002 Phys. Rev. B 66 052411
[16] Li M, Zhu Z Y, Yu S D, Cui Q L, Zhou Q, Chen J L, Wu G H 2009 Acta Phys. Sin. 58 3479(in Chinese) [马 丽、朱志永、李 敏、于世丹、崔启良、周 强、陈京兰、吴光恒 2009 58 3497]
[17] Tao J, Yao Z J, Xue F 2006 Fundamentals of Materials Science (Beijing: Chemical Industry Press) p299 (in Chinese) [陶杰、姚正军、薛烽 2006 材料科学基础 (北京:化学工业出版社) 第299页]
[18] Popovic S, Grzeta B, Ilakovac V, Kroggel R, Wendrock G, Loffler H 1992 Phys. Stat. Sol. (a) 130 273
[19] Popovic S, Grzeta B, Loffler H, Wendrock G 1993 Phys. Stat. Sol. (a) 140 341
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