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Silicon quantum dots fabricated by nanosecond pulse laser in nitrogen, oxygen or air environment have enhancement in photoluminescence emission. The stimulated emission was observed at about 700 nm. It is difficult to recognize the difference between the photoluminescence peaks from samples in different environments, which is because of the same structure of the electron states in the band gap for different samples. The calculation results show that the same structure of the localized states forms in the band gap when silicon dangling bonds on surface of quantum dots are passivated by nitrogen or oxygen. It is the localized states that could catch the electrons from the conduction band to form metastable states, which is the key factor to enhance photoluminescence emission.
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Keywords:
- silicon quantum dots /
- photoluminescence spectra /
- enhanced emission /
- electron localized states
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[1] Ashoori R C 1996 Nature 379 413
[2] Alivisatos A P 1996 Science 271 933
[3] Stephanie M R, Matti M 2002 Rev. Mod. Phys. 74 1283
[4] Pavesi L, Negro L D, Mazzoleni C, Franzo G, Priolo F 2000 Nature 408 440
[5] Serpengüzel A, Kurt A, Inan I, Cary J E, Mazur E 2008 J. Nanophotonics 2 021770
[6] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[7] Wolkin M V, Jorne J, Fauchet P M 1999 Phys. Rev. Lett. 82 197
[8] Qin G G, Li Y J 2003 Phys. Rev. B 68 085309
[9] Huang W Q, Liu S R, Xu L 2007 J. Appl. Phys. 102 053517
[10] Huang W Q, Wang X Y, Zhang R T, Yu S Q, Qin C J 2009 Acta Phys. Sin. 58 7 (in CHinese) [黄伟其、王晓允、张荣涛、于示强、秦朝建 2009 58 7]
[11] Huang W Q, Wang H X, Jin F, Qin C J 2008 Chin. Phys. B 17 10
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