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The negative differential resistance (NDR) characteristic equation of single electron transistor and metal oxide semiconductor (SETMOS) hybrid structure is simplified by a fitting method. And a new approach to designing multi-scroll chaotic circuit with SETMOS is proposed. The effect of NDR characteristic on the equilibrium point of multi-scroll Chua’s circuit is analyzed both qualitatively and quantitatively. The results show that the unidirectional motions of radial contract and axial tension occur in the negative sections of multi-scroll Chua’s circuit, whereas in the positive sections appear the scroll motions of radial tension and axial contract. The result provides theoretical basis for the construction of multi-scroll chaotic circuits and the further study of their complex dynamical behaviors.
[1] Yu S M, Lin Q H, Qiu S S 2003 Acta Phys. Sin. 52 25 (in Chinese) [禹思敏、林清华、丘水生 2003 52 25]
[2] Luo X H, Li H Q, Dai X G 2008 Acta Phys. Sin. 57 7511 (in Chinese) [罗小华、李华青、代祥光 2008 57 7511]
[3] Tang W K S, Zhong G Q, Chen G, Man K F 2001 IEEE Trans. Circuits Syst. Ⅰ 48 1369
[4] Yalcin M E, Suykens J A K, Vandewalle J, Ozoguz S 2002 Int. J. Bifur. Chaos 12 23
[5] Lü J H, Han F L, Yu X H, Chen G R 2004 Automatica 40 1677
[6] Zhang C X, Yu S M 2009 Chin. Phys. B 18 119
[7] Lü J H, Chen G R, Yu X H, Leung H 2004 IEEE Trans. Circuits Syst. Ⅰ 51 2476
[8] Chen L, Peng H J, Wang D S 2008 Acta Phys. Sin. 57 3337 (in Chinese)[谌 龙、彭海军、王德石 2008 57 3337]
[9] Zhang C X, Yu S M 2009 Acta Phys. Sin. 58 120 (in Chinese)[张朝霞、禹思敏 2009 58 120]
[10] Wang F Q, Liu C X 2007 Acta Phys. Sin. 56 1983 (in Chinese)[王发强、刘崇新 2007 56 1983]
[11] Thompson S E, Parthasarathy S 2006 Mater. Today 9 20
[12] Mahapatra S, Ionescu A M 2005 IEEE Trans. Nanotechnol. 4 705
[13] Arena P, Baglio S, Fortuna L, Manganaro G 1995 IEEE Trans. Circuits Syst. Ⅰ 42 123
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[1] Yu S M, Lin Q H, Qiu S S 2003 Acta Phys. Sin. 52 25 (in Chinese) [禹思敏、林清华、丘水生 2003 52 25]
[2] Luo X H, Li H Q, Dai X G 2008 Acta Phys. Sin. 57 7511 (in Chinese) [罗小华、李华青、代祥光 2008 57 7511]
[3] Tang W K S, Zhong G Q, Chen G, Man K F 2001 IEEE Trans. Circuits Syst. Ⅰ 48 1369
[4] Yalcin M E, Suykens J A K, Vandewalle J, Ozoguz S 2002 Int. J. Bifur. Chaos 12 23
[5] Lü J H, Han F L, Yu X H, Chen G R 2004 Automatica 40 1677
[6] Zhang C X, Yu S M 2009 Chin. Phys. B 18 119
[7] Lü J H, Chen G R, Yu X H, Leung H 2004 IEEE Trans. Circuits Syst. Ⅰ 51 2476
[8] Chen L, Peng H J, Wang D S 2008 Acta Phys. Sin. 57 3337 (in Chinese)[谌 龙、彭海军、王德石 2008 57 3337]
[9] Zhang C X, Yu S M 2009 Acta Phys. Sin. 58 120 (in Chinese)[张朝霞、禹思敏 2009 58 120]
[10] Wang F Q, Liu C X 2007 Acta Phys. Sin. 56 1983 (in Chinese)[王发强、刘崇新 2007 56 1983]
[11] Thompson S E, Parthasarathy S 2006 Mater. Today 9 20
[12] Mahapatra S, Ionescu A M 2005 IEEE Trans. Nanotechnol. 4 705
[13] Arena P, Baglio S, Fortuna L, Manganaro G 1995 IEEE Trans. Circuits Syst. Ⅰ 42 123
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