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The x-ray phase grating made on silicon wafer was designed under considerations of the parameters of the phase contrast imaging system, the spatial coherence characteristics of x-ray source and its diffraction efficiency for x-ray of 40—100 keV, which is usually used for phase contrast imaging in laboratories and hospitals. The phase grating with diameter of 5 inch , pitch of 5.6 μm, wall width of 2.8 μm and depth of 40—70 μm depending on the energy of x-ray photon, was fabricated using the technique of photo-assisted electrochemical etching developed in our lab. Two special methods, namely, the enhancement of the voltage applied to the silicon wafer and modification of the current density defined by Lehmann formula, have been used to reduce the lateral etching. A reproducible technique has been developed for fabrication of precise and large x-ray phase grating on silicon wafer.
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Keywords:
- x-ray /
- phase contrast imaging /
- phase grating /
- silicon etching /
- photon-aided electrochemical etching
[1] Pfeiffer F, Weitkamp T, Bunk O, David C 2006 Nat. Phys. 2 258
[2] Pfeiffer F, Bech M, Bunk O,Kraft P, Eikenberry E F, Bronnimann C H, Grünzweig C, David C 2008 Nat. Mater. 7 134
[3] Zhu H F, Xie H L, Gao H Y, Chen J W, Li R X, Xu Z Z 2005 Chin. Phys. 14 796
[4] Zhang D, Li Z, Huang Z F, Yu A M, Sha W 2006 Chin. Phys. 15 1731
[5] Gao D C, Pogany A, Stevenson A W, Gureyev T, Wilkins S W 2000 Acta Phys. Sin. 49 2357 (in Chinese)[高大超、Pogany A,Stevenson A W,Gureyev T, Wilkins S W 2000 49 2357]
[6] Snigirev A, Snigireva I, Kohn V, Kuznetsov S, Schelokov I 1995 Rev. Sci. Instrum. 66 5486
[7] Cloetens P, Barrett R, Baruchel J, Guigay J P, Schlenker M 1996 J. Phys. D: Appl. Phys. 29 133
[8] Momose A, Takeda T, Itai Y, Hirano K 1996 Nat. Med. 2 473
[9] Chapman D, Thomlinson W, Johnston R E 1997 Phys. Med. Biol. 42 2015
[10] David C, Nohammer B, Solak H H, Ziegler E 2002 Appl. Phys. Lett. 81 3287
[11] Niu H B,Guo J C,Wang K G, Yang Q L 2006 China Patent 200610062487.1
[12] Zhao Z G, Bai C L, Guo J C, Niu H B 2007 Proc. SPIE 6836 68360W
[13] Zhao Z G, Niu H B, Guo J C 2009 China Patent 200910105069.X
[14] Liu X, Guo J C, Peng X, Niu H B 2006 Chin. Phys. 16 1632
[15] Lehmann V 1993 J. Electrochem. Soc. 140 2836
[16] Lehmann V 2002 Electrochemistry of Silicon (Weinheim: Wiley-VCH) p133
[17] Geppert T, Schweizer S L, Gsele U, Wehrspohn R B 2006 Appl. Phys. A 84 237
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[1] Pfeiffer F, Weitkamp T, Bunk O, David C 2006 Nat. Phys. 2 258
[2] Pfeiffer F, Bech M, Bunk O,Kraft P, Eikenberry E F, Bronnimann C H, Grünzweig C, David C 2008 Nat. Mater. 7 134
[3] Zhu H F, Xie H L, Gao H Y, Chen J W, Li R X, Xu Z Z 2005 Chin. Phys. 14 796
[4] Zhang D, Li Z, Huang Z F, Yu A M, Sha W 2006 Chin. Phys. 15 1731
[5] Gao D C, Pogany A, Stevenson A W, Gureyev T, Wilkins S W 2000 Acta Phys. Sin. 49 2357 (in Chinese)[高大超、Pogany A,Stevenson A W,Gureyev T, Wilkins S W 2000 49 2357]
[6] Snigirev A, Snigireva I, Kohn V, Kuznetsov S, Schelokov I 1995 Rev. Sci. Instrum. 66 5486
[7] Cloetens P, Barrett R, Baruchel J, Guigay J P, Schlenker M 1996 J. Phys. D: Appl. Phys. 29 133
[8] Momose A, Takeda T, Itai Y, Hirano K 1996 Nat. Med. 2 473
[9] Chapman D, Thomlinson W, Johnston R E 1997 Phys. Med. Biol. 42 2015
[10] David C, Nohammer B, Solak H H, Ziegler E 2002 Appl. Phys. Lett. 81 3287
[11] Niu H B,Guo J C,Wang K G, Yang Q L 2006 China Patent 200610062487.1
[12] Zhao Z G, Bai C L, Guo J C, Niu H B 2007 Proc. SPIE 6836 68360W
[13] Zhao Z G, Niu H B, Guo J C 2009 China Patent 200910105069.X
[14] Liu X, Guo J C, Peng X, Niu H B 2006 Chin. Phys. 16 1632
[15] Lehmann V 1993 J. Electrochem. Soc. 140 2836
[16] Lehmann V 2002 Electrochemistry of Silicon (Weinheim: Wiley-VCH) p133
[17] Geppert T, Schweizer S L, Gsele U, Wehrspohn R B 2006 Appl. Phys. A 84 237
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