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We report the magnetic-field effect (MFE) in Alq3 based organic light-emitting device (OLED) with the structure of ITO/NPB/LiF/Alq3/LiF/Al.When an external magnetic field of 50 mT and insertion of LiF thickness of 0.8 nm is applied, the current efficiency and the brightness of the device increase to 12.4% and 17%, respectively.The origin of the improvements could be attributed to the Zeeman effect,which reduces the hyperfine interactions of electrons and holes, inhibiting energy transfer from the singlet polaron pairs to triplet polaron pairs and increasing the population of singlets.Similar MFE was observed in phosphorescent organic light-emitting diodes(PhOLEDs).The current efficiency of ITO/NPB/LiF(0.8 nm)/CBP:6 wt% Ir(ppy)3/BCP/Alq3/LiF/Al increases to 12.1% at 50 mT.Magnetic-field-induced increase of singlet excitons in the CBP matrix reflects increase of triplet excitons in the dispersed Ir(ppy)3 molecules in the CBP+Ir(ppy)3 blend.
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Keywords:
- The role of magnetic fields on organic light-emitting devices based on aluminum tris(8-hydroxyquinoline) (Alq3) at room temperature /
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[1] ［1］Li C, Peng J B, Zeng W J 2009 Acta Phys.Sin. 58 1992(in Chinese )［李春、彭俊彪、曾文进 2009 58 1992］
[2] ［2］Hu Y， Rao H B 2009 Chin. Phys. B 18 1627
[3] ［3］Duan Y, He F, Chen P, Zhao Y, Liu S Y, Ma Y G 2008 Opt. Quant.Electron 40 573
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[9] ［9］Qian L, Teng F, Xu Z, Quan S Y, Liu D A, Wang Y M, Wang Y S, Xu X R 2006 Acta Phys. Sin. 55 929(in Chinese)［钱磊、滕枫、徐征、权善玉、刘德昂、王元敏、王永生、徐叙瑢 2006 55 929 ］
[10] ］Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[11] ］Groff R P, Merrifield R E, Suna A, Avakian P 1972 Phys. Rev. Lett. 29 429
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[15] ］Desai P, Shakya P, Kreouzis T, Gillin W P, Morley N A, Gibbs M R J 2007 Phys.Rev.B 75 4423
[16] ］Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J.Appl.Lett. 102 3710
[17] ］Shakya P, Desai P, Somerton M, Gannaway G, Kreouzis T, Gillin W P 2008 J. Appl. Phys. 103 3715
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[19] ］Wang Z, He Z H, Tang X W，Tao M L，Li G Q, Xiong Z H 2007 Acta Phys.Sin. 56 2979(in Chinese )［王振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979］
[20] ］Liu R, Lei Y L, Zhang Y，Wang Z，Xiong Z H 2009 Sci. China Ser. G 39 662(in Chinese ) ［刘荣、雷衍连、张勇、王振、熊祖洪 2009 中国科学 G辑 39 662］
[21] ］Wang G D，Cong L，Meng Z H，Meng F C，Zhang G，Gao Y H，Hua J，Wang J，Jiang W L 2008 J. Liq. Cryst. Disp. Sin. 23 716(in Chinese) ［王广德、丛林、孟昭晖、孟凡超、张刚、高永慧、华杰、汪津、姜文龙 2008 液晶与显示 23 716］
[22] ］Ihm K W, Kang T H, Kim K J, Hwang C C, Park Y J, Lee K B, Kim B S, Jeon C H, Park C Y, Kim K B, Tak Y H.2003 Appl.Phys.Lett. 83 2949
[23] ］Han K，Yi Y，Song W J，Cho S W，Jeon P E，Lee H，Whang C N，Jeong K 2008 Org. Electron. 9 30
[24] ］Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattor V 2003 Chem.Phy.Lett. 380 710
[25] ］Wu Y, Hu B, Howe J 2007 Phys. Rev. B 75 5214
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[1] ［1］Li C, Peng J B, Zeng W J 2009 Acta Phys.Sin. 58 1992(in Chinese )［李春、彭俊彪、曾文进 2009 58 1992］
[2] ［2］Hu Y， Rao H B 2009 Chin. Phys. B 18 1627
[3] ［3］Duan Y, He F, Chen P, Zhao Y, Liu S Y, Ma Y G 2008 Opt. Quant.Electron 40 573
[4] ［4］Li Q，Yu J S， Li L，Jiang Y D，Suo F，Zhan X W 2008 Acta Phys. Chim. Sin. 24 133(in Chinese)［李青、于军胜、李璐、蒋亚东、锁钒、占肖卫 2008 物理化学学报 24 133］
[5] ［5］Hua Y L, Wang Y, Wu X M, Yin S G, Zhang L J 2008 Chin. Phys. B 17 3097
[6] ［6］Xie Y Q, Guo J H, Peng J B, Cao Y, Wang Y 2005 Acta Phys. Sin. 54 3424(in Chinese)［谢玉卿、郭建华、彭俊彪、曹镛、王悦 2005 54 3424］
[7] ［7］Yeh S J, Chen H Y, Wu M F, Chan L H, Chiang C L, Yeh H C, Chen C T, Lee J H 2006 Org. Electron. 7 137
[8] ［8］Sun Y R, Giebink N C, Kanno H, Ma B W,Thompson M E, Forrest S R 2006 Nature 440 908
[9] ［9］Qian L, Teng F, Xu Z, Quan S Y, Liu D A, Wang Y M, Wang Y S, Xu X R 2006 Acta Phys. Sin. 55 929(in Chinese)［钱磊、滕枫、徐征、权善玉、刘德昂、王元敏、王永生、徐叙瑢 2006 55 929 ］
[10] ］Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[11] ］Groff R P, Merrifield R E, Suna A, Avakian P 1972 Phys. Rev. Lett. 29 429
[12] ］Groff R P, Suna A, Avakian P, Merrifield R E 1974 Phys. Rev. B 9 2655
[13] ］Kalinowski J, Cocchi M, Virgili D, Fattori V, Di Marco P 2004 Phys.Rev. B 70 5303
[14] ］Odaka H,Okimoto Y,Yamada T, Okamoto H, Kawasaki M, Tokura Y 2006 Appl.Phys.Lett. 88 3501
[15] ］Desai P, Shakya P, Kreouzis T, Gillin W P, Morley N A, Gibbs M R J 2007 Phys.Rev.B 75 4423
[16] ］Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J.Appl.Lett. 102 3710
[17] ］Shakya P, Desai P, Somerton M, Gannaway G, Kreouzis T, Gillin W P 2008 J. Appl. Phys. 103 3715
[18] ］Veeraraghavan G, Nguyen T D, Sheng Y, Mermer O, Wohlgenannt M J. 2007 Phys.Condes.Matter. 19 6209
[19] ］Wang Z, He Z H, Tang X W，Tao M L，Li G Q, Xiong Z H 2007 Acta Phys.Sin. 56 2979(in Chinese )［王振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979］
[20] ］Liu R, Lei Y L, Zhang Y，Wang Z，Xiong Z H 2009 Sci. China Ser. G 39 662(in Chinese ) ［刘荣、雷衍连、张勇、王振、熊祖洪 2009 中国科学 G辑 39 662］
[21] ］Wang G D，Cong L，Meng Z H，Meng F C，Zhang G，Gao Y H，Hua J，Wang J，Jiang W L 2008 J. Liq. Cryst. Disp. Sin. 23 716(in Chinese) ［王广德、丛林、孟昭晖、孟凡超、张刚、高永慧、华杰、汪津、姜文龙 2008 液晶与显示 23 716］
[22] ］Ihm K W, Kang T H, Kim K J, Hwang C C, Park Y J, Lee K B, Kim B S, Jeon C H, Park C Y, Kim K B, Tak Y H.2003 Appl.Phys.Lett. 83 2949
[23] ］Han K，Yi Y，Song W J，Cho S W，Jeon P E，Lee H，Whang C N，Jeong K 2008 Org. Electron. 9 30
[24] ］Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattor V 2003 Chem.Phy.Lett. 380 710
[25] ］Wu Y, Hu B, Howe J 2007 Phys. Rev. B 75 5214
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