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Using high temperature scanning tunneling microscopy (STM) and XPS, we investigated the dynamic process of SrO/Si(100) changing to Sr/Si(100) reconstructed surface, which plays a critical role in the growth of crystalline oxide on silicon substrate. During this process we find some interesting phenomenan: there appears crystalline SrO on Si(100) substrate at low annealing temperature of 500 ℃; at higher annealing temperature of 550—590 ℃, the oxygen in the SrO/Si(100) interface will react with silicon and form volatile SiO, leading the surface with a large quantity of line vacancies. In the later case, there appears abnormal metallic property of this surface, which results from dangling bonds of silicon atoms in the surface.
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Keywords:
- SrO/Si surface /
- Sr/Si surface /
- scanning tunneling microscopy /
- deoxidation process
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[1] ［1］Herrera-Gómez A, Aguirre-Tostado F S, Sun Y, Pianetta P, Yu Z, Maeshall D, Droopad R, Spicer W E 2001 J. Appl. Phys. 90 6070
[2] ［2］Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402
[3] ［3］Liang Y, Gan S, Engelhard M 2001 Appl. Phys. Lett. 79 3591
[4] ［4］Hu X M, Li H, Liang Y, Wei Y, Yu Z, Marshall D, Edwards J, Droopad R, Zhang X, Demkov A A, Moore K, Kulik J 2003 Appl. Phys. Lett. 82 203
[5] ［5］Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53
[6] ［6］Delhaye G, El Kazzi M, Gendry M, Hollinger G, Robach Y 2007 Thin Solid Films 515 6332
[7] ［7］Reiner J W, Garrity K F, Walker F J, Ismail-Beigi S, Ahn C H 2008 Phys. Rev. Lett. 101 105503
[8] ［8］Kingon A I, Maria J P, Streiffer S K 2000 Nature 406 1032
[9] ［9］Fitting Kourkoutis L, Stephen C H, Vaithyanathan V, Li H, Parker M K, Andersen K E, Schlom D G, Muller D A 2008 Phys. Rev. Lett. 100 036101
[10] ］McKee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014
[11] ］McKee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726
[12] ］Niu F, Wessels B W 2007 Journal of Crystal Growth 300 509
[13] ］Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 146707
[14] ］Liu Z W, Gu J F, Sun C W 2006 Acta Phys. Sin. 55 1965 (in Chinese) ［刘志文、 谷建峰、 孙成伟等 2006 55 1965］
[15] ］Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H 2005 Acta Phys. Sin. 54 1390 (in Chinese) ［马建华、 孙璟兰、 孟祥建、 林铁、 石富文、 褚君浩 2005 54 1390］
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