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Cu would be doped and form deep level centers easily in CdTe solar cells. The deep level centers in ZnTe back contact and graphite back contact CdTe solar cells were studied by deep level transient spectroscopy(DLTS). The electronic density of states on zinc blende CdTe，VCd system and CdTe doping Cu were analyzed with density functional theory. The d-orbital splitting of Cu2+ in C3v and Td fields was obtained. The results show that two deep centers Ev+0206 eV and Ev+0122 eV，respectively，are attributed to substitutional Cu，energy of CdTe is reduced after Cu doping，and Cu could replace Cd.
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Keywords:
- deep level transient spectroscopy /
- first-principle /
- CdTe /
- Cu impurity
[1] ［1］Versluys J, Clauws P, Nollet P, Degrave S, Burgelman M 2004 Thin Solid Films 451-452 434
[2] ［2］He J X, Zheng J G, Li W, Feng L H, Cai W, Cai Y P, Zhang J Q, Li B, Lei Z, Wu L L, Wang W W 2007 Acta Phys. Sin. 56 5548 (in Chinese) ［贺剑雄、郑家贵、李卫、冯良桓、蔡伟、蔡亚平、张静全、黎兵、雷智、武莉莉、王文武 2007 56 5548］
[3] ［3］Balcioglu A, Ahrenkiel P K, Hasoon F 2000 J. Appl. Phys. 88 7176
[4] ［4］Komin V, Viswanathan V, Tetali B, Morel D L, Ferekides C S 2002 Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference 56 5548
[5] ［5］Bayhan H 2004 J. Phys. Chem. Solids 65 1817
[6] ［6］Du M H 2008 Phys. Rev. B 78 172105
[7] ［7］Li B, Liu C, Feng L H, Zhang J Q, Zheng J G, Cai Y P, Cai W, Wu L L, Li W, Lei Z, Zeng G G, Xia G P 2009 Acta Phys. Sin. 58 1987(in Chinese)黎兵、刘才、冯良桓、张静全、郑家贵、蔡亚平、蔡伟、武莉莉、李卫、雷智、曾广根、夏庚培 2009 58 1987］
[8] ［8］Zhang S B 2002 J. Phys. D: Condens. Matter 14 881
[9] ［9］Yan Y, Jones K M, 2007 Physica B 401—402 25
[10] ］Versluys J 2004 Thin Solid Films. 451—452 434
[11] ］Castaldini A 1998 J. Appl. Phys. 83 2121
[12] ］Stadler W 1995 Phys. Rev. B 51 10619
[13] ］Stampfl C, van de Walle C G 1999 Phys. Rev. B 59 5521
[14] ］Duan H, Chen X S, Sun L Z, Zhou X H, Lu W 2005 Acta Phys. Sin. 54 5293(in Chinese)［段鹤、陈效双、孙立忠、周孝好、陆卫 2005 54 5293］
[15] ］Corwine C R, Pudov A O, Gloeckler M, Demtsu S H, Sites J R 2004 Solar Energ. Mater. Solar Cells 82 481
[16] ］Dang S H, Li C X, Han P D 2009 Acta Phys. Sin. 58 4137 (in Chinese) ［党随虎、李春霞、韩培德 2009 58 4137］
[17] ］Milnes A G 1973 Deep Impurities in Semiconductors(Wiley-Interscience, NewYork) p109
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[1] ［1］Versluys J, Clauws P, Nollet P, Degrave S, Burgelman M 2004 Thin Solid Films 451-452 434
[2] ［2］He J X, Zheng J G, Li W, Feng L H, Cai W, Cai Y P, Zhang J Q, Li B, Lei Z, Wu L L, Wang W W 2007 Acta Phys. Sin. 56 5548 (in Chinese) ［贺剑雄、郑家贵、李卫、冯良桓、蔡伟、蔡亚平、张静全、黎兵、雷智、武莉莉、王文武 2007 56 5548］
[3] ［3］Balcioglu A, Ahrenkiel P K, Hasoon F 2000 J. Appl. Phys. 88 7176
[4] ［4］Komin V, Viswanathan V, Tetali B, Morel D L, Ferekides C S 2002 Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference 56 5548
[5] ［5］Bayhan H 2004 J. Phys. Chem. Solids 65 1817
[6] ［6］Du M H 2008 Phys. Rev. B 78 172105
[7] ［7］Li B, Liu C, Feng L H, Zhang J Q, Zheng J G, Cai Y P, Cai W, Wu L L, Li W, Lei Z, Zeng G G, Xia G P 2009 Acta Phys. Sin. 58 1987(in Chinese)黎兵、刘才、冯良桓、张静全、郑家贵、蔡亚平、蔡伟、武莉莉、李卫、雷智、曾广根、夏庚培 2009 58 1987］
[8] ［8］Zhang S B 2002 J. Phys. D: Condens. Matter 14 881
[9] ［9］Yan Y, Jones K M, 2007 Physica B 401—402 25
[10] ］Versluys J 2004 Thin Solid Films. 451—452 434
[11] ］Castaldini A 1998 J. Appl. Phys. 83 2121
[12] ］Stadler W 1995 Phys. Rev. B 51 10619
[13] ］Stampfl C, van de Walle C G 1999 Phys. Rev. B 59 5521
[14] ］Duan H, Chen X S, Sun L Z, Zhou X H, Lu W 2005 Acta Phys. Sin. 54 5293(in Chinese)［段鹤、陈效双、孙立忠、周孝好、陆卫 2005 54 5293］
[15] ］Corwine C R, Pudov A O, Gloeckler M, Demtsu S H, Sites J R 2004 Solar Energ. Mater. Solar Cells 82 481
[16] ］Dang S H, Li C X, Han P D 2009 Acta Phys. Sin. 58 4137 (in Chinese) ［党随虎、李春霞、韩培德 2009 58 4137］
[17] ］Milnes A G 1973 Deep Impurities in Semiconductors(Wiley-Interscience, NewYork) p109
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