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The active region of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser （THz QCL） is grown by gas-source molecular beam epitaxy. The device fabrication process of semi-insulating surface-plasmon THz QCL is studied in detail. The electrical and optical characteristics of the fabricated THz QCL device are measured using a far-infrared Fourier transform infrared spectrometer with a deuterated triglycerine sulfate far-infrared detector. At 10 K，the measured lasing frequency is 32 THz and the threshold current density is 275 A/cm2.
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Keywords:
- terahertz /
- quantum-cascade laser /
- waveguide /
- device process
[1] ［1］Semtsiv M P，Wienold M，Dressler S，Masselink W T 2007 Appl. Phys. Lett. 90 051111
[2] ［2］Walther C，Fischer M，Scalari G，Terazzi R，Hoyler N，Faist J 2007 Appl. Phys. Lett. 91 131122
[3] ［3］Faist J，Scalari G，Walther C，Fischer M 2007 Materials Research Society Spring Meeting，San Fransisco，California，April 2007
[4] ［4］Faist J，Capasso F，Sivco D L，Sirtori C，Hutchinson A L，Cho A Y 1994 Science 264 553
[5] ［5］Iotti R C，Rossi F 2001 Phys. Rev. Lett. 87 146603
[6] ［6］Cao J C 2003 Phys. Rev. Lett. 91 237401
[7] ［7］Zhang Y H，Wang C 2006 Chin. Phys. 15 649
[8] ［8］Wang C，Zhang Y H 2006 Chin. Phys. 15 2120
[9] ［9］Ma M R，Chen Y L，Wang L M，Wang C 2008 Chin. Phys. B 17 1854
[10] ］Khler R，Tredicucci A，Beltram F，Beere H E，Linfield E H，Davies A G，Ritchie D A，Iotti R C，Rossi F 2002 Nature 417 156
[11] ］Williams B S，Kumar S，Hu Q，Reno J L 2006 Electron. Lett. 42 89
[12] ］Williams B S，Kumar S，Hu Q，Reno J L 2005 Opt. Express 13 3331
[13] ］Kumar S，Hu Q，Reno J L 2009 Appl. Phys. Lett. 94 131105
[14] ］Li H，Cao J C，Lü J T，Han Y J 2008 Appl. Phys. Lett. 92 221105
[15] ］Li H，Cao J C and Lu J T 2008 J. Appl. Phys. 103 103113
[16] ］Barbieri S，Alton J，Beere H E，Fowler J，Linfield E H，Ritchie D A 2004 Appl. Phys. Lett. 85 1674
[17] ］Li H，Cao J C，Han Y J，Guo X G，Tan Z Y，Lü J T，Luo H，Laframboise S R，Liu H C 2008 J. Appl. Phys. 104 043101
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[1] ［1］Semtsiv M P，Wienold M，Dressler S，Masselink W T 2007 Appl. Phys. Lett. 90 051111
[2] ［2］Walther C，Fischer M，Scalari G，Terazzi R，Hoyler N，Faist J 2007 Appl. Phys. Lett. 91 131122
[3] ［3］Faist J，Scalari G，Walther C，Fischer M 2007 Materials Research Society Spring Meeting，San Fransisco，California，April 2007
[4] ［4］Faist J，Capasso F，Sivco D L，Sirtori C，Hutchinson A L，Cho A Y 1994 Science 264 553
[5] ［5］Iotti R C，Rossi F 2001 Phys. Rev. Lett. 87 146603
[6] ［6］Cao J C 2003 Phys. Rev. Lett. 91 237401
[7] ［7］Zhang Y H，Wang C 2006 Chin. Phys. 15 649
[8] ［8］Wang C，Zhang Y H 2006 Chin. Phys. 15 2120
[9] ［9］Ma M R，Chen Y L，Wang L M，Wang C 2008 Chin. Phys. B 17 1854
[10] ］Khler R，Tredicucci A，Beltram F，Beere H E，Linfield E H，Davies A G，Ritchie D A，Iotti R C，Rossi F 2002 Nature 417 156
[11] ］Williams B S，Kumar S，Hu Q，Reno J L 2006 Electron. Lett. 42 89
[12] ］Williams B S，Kumar S，Hu Q，Reno J L 2005 Opt. Express 13 3331
[13] ］Kumar S，Hu Q，Reno J L 2009 Appl. Phys. Lett. 94 131105
[14] ］Li H，Cao J C，Lü J T，Han Y J 2008 Appl. Phys. Lett. 92 221105
[15] ］Li H，Cao J C and Lu J T 2008 J. Appl. Phys. 103 103113
[16] ］Barbieri S，Alton J，Beere H E，Fowler J，Linfield E H，Ritchie D A 2004 Appl. Phys. Lett. 85 1674
[17] ］Li H，Cao J C，Han Y J，Guo X G，Tan Z Y，Lü J T，Luo H，Laframboise S R，Liu H C 2008 J. Appl. Phys. 104 043101
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