IMPROVEMENT IN ELECTRICAL PROPERTIES OF SIMNI FILMS BY MULTIPLE-STEPS IMPLANTATION

LU DIAN-TONG; HUANG DONG; HEINER RYSSEL

doi:10.7498/aps.50.185

Abstract

SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiplestep implantation methods. The Hal-l effects measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects E_t=0.152eV in the standard SIMNI films, and no deep level defects in the multiple-step implanted SIMNI films, which have good electrical properties.

Keywords:

Authors and contacts

1. Institute of Low Energy Nuclear Physics Beijing Normal University Beijing 100875 China;
2. Fraungofer-Arbeitsgruppe, fur Integrierte Schaitungem, Abteilung fur Bauelementetechnologie, Artilleriestrabe 12, D-8520 Erlangen, Germany

References

[1]	J.P. Colinge, Silicon-On-Insulator Technology, Materials To VLSI, Kluwer Academic Publishers, 1991 1-10.
[2]	M. Fujishima et al., IEEE SSC 28(1993), 510.
[3]	Ru Huang et al., IEEE Transaction on Electron Devices, 45(1998), 2079.
[4]	W. P. Maszara, SOI Material:Ready to Take over Mainstream Bulk Si, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 716-719.
[5]	Dian-Tong Lu and H. Ressel, Properties of SOI-SIMNI Films, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 307-310.
[6]	L.J. Van der Pauw, Philips.Research Reports, 13(1958), 1.

Cited By

[1]	J.P. Colinge, Silicon-On-Insulator Technology, Materials To VLSI, Kluwer Academic Publishers, 1991 1-10.
[2]	M. Fujishima et al., IEEE SSC 28(1993), 510.
[3]	Ru Huang et al., IEEE Transaction on Electron Devices, 45(1998), 2079.
[4]	W. P. Maszara, SOI Material:Ready to Take over Mainstream Bulk Si, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 716-719.
[5]	Dian-Tong Lu and H. Ressel, Properties of SOI-SIMNI Films, 5th International Conference On Solid-State and Integrated Circuit Technology, Beijing, 1998, 307-310.
[6]	L.J. Van der Pauw, Philips.Research Reports, 13(1958), 1.

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Vol. 50, Issue 1 - 2001-01-05

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