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(1)华南建设学院西院基础部,广州510405; (2)香港大学物理系,香港; (3)中山大学物理系,广州510275
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[1] Li Jin-Jin, Li Duo-Sheng, Hong Yue, Zou Wei, He Jun-Jie. Growth of graphene on Al2O3 (0001) surface. Acta Physica Sinica, 2017, 66(21): 217101. doi: 10.7498/aps.66.217101 [2] Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica, 2017, 66(1): 017501. doi: 10.7498/aps.66.017501 [3] Deng Fa-Ming. Effect of intense laser irradiation on the electronic properties of 6H-SiC. Acta Physica Sinica, 2016, 65(10): 107101. doi: 10.7498/aps.65.107101 [4] Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong. Spectra study of He-irradiation induced defects in 6H-SiC. Acta Physica Sinica, 2014, 63(21): 216101. doi: 10.7498/aps.63.216101 [5] Yun Zhi-Qiang, Wei Ru-Sheng, Li Wei, Luo Wei-Wei, Wu Qiang, Xu Xian-Gang, Zhang Xin-Zheng. Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser. Acta Physica Sinica, 2013, 62(6): 068101. doi: 10.7498/aps.62.068101 [6] Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang, Kang Chao-Yang, Tang Jun. Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures. Acta Physica Sinica, 2011, 60(4): 047302. doi: 10.7498/aps.60.047302 [7] Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei. Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica, 2010, 59(9): 6390-6393. doi: 10.7498/aps.59.6390 [8] Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447. doi: 10.7498/aps.58.3443 [9] Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287. doi: 10.7498/aps.58.7282 [10] Tang Chao, Ji Lu, Meng Li-Jun, Sun Li-Zhong, Zhang Kai-Wang, Zhong Jian-Xin. Growth of graphene structure on 6H-SiC(0001): Molecular dynamics study. Acta Physica Sinica, 2009, 58(11): 7815-7820. doi: 10.7498/aps.58.7815 [11] Wu Yu-Yu, Chen Shi, Gao Xin-Yu, Andrew Thye Shen Wee, Xu Peng-Shou. Synchrotron radiation angle-resolved photoelectron spectroscopy studies of 6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）] R30° surface. Acta Physica Sinica, 2009, 58(6): 4288-4294. doi: 10.7498/aps.58.4288 [12] Yang Chun, Li Yan-Rong, Yan Qi-Li, Liu Yong-Hua. Effects of atomic defects of α-Al2O3(0001) on ZnO adsorption. Acta Physica Sinica, 2005, 54(5): 2364-2368. doi: 10.7498/aps.54.2364 [13] Li Zhen-Sheng, Cheng Juan, Wang Zhi-Hua, Luo Shi-Rong, Yang Jing-Guo. Investigation of amplification characteristics of SRS in acetone enhanced by DCM dye fluorescence. Acta Physica Sinica, 2005, 54(9): 4164-4168. doi: 10.7498/aps.54.4164 [14] Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi. Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715. doi: 10.7498/aps.53.3710 [15] Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833. doi: 10.7498/aps.52.830 [16] Yang Chun, Li Yan-Rong, Xue Wei-Dong, Tao Bai-Wan, Liu Xing-Zhao, Zhang Ying, Huang Wei. Study on the structure and energy of the (0001) surface of α-Al2O3 substrate. Acta Physica Sinica, 2003, 52(9): 2268-2273. doi: 10.7498/aps.52.2268 [17] Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2003, 52(10): 2553-2557. doi: 10.7498/aps.52.2553 [18] WANG YU-XIA, GUO ZHEN, HE HAI-PING, CAO YING, TANG HONG-GUO. EPITAXIAL GROWTH OF (0001)ORIENTED 6H-SiC FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING. Acta Physica Sinica, 2001, 50(2): 256-261. doi: 10.7498/aps.50.256 [19] SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC. Acta Physica Sinica, 2000, 49(9): 1786-1791. doi: 10.7498/aps.49.1786 [20] Chen Qun-qi; Lin Zhang-da; Ji Shang-xue;Xie Kan; Chang Ying-zhuan;Hou De-sen;Wang Tai-hong. STUDIES ON UPS AND XPS OF 0_2_ AND H_2_0 ABSORPTION ON SURFACES OF SrTi0_3_. Acta Physica Sinica, 1987, 36(8): 1075-1080. doi: 10.7498/aps.36.1075
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- Published Online:
22 December 2006
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