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Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET. Acta Physica Sinica,
2013, 62(18): 188503.
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Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei. Gate current degradation model of the AlGaAs/InGaAs PHEMT. Acta Physica Sinica,
2013, 62(15): 157203.
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Li Fei, Xiao Liu, Liu Pu-Kun, Yi Hong-Xia, Wan Xiao-Sheng. A study on the cut-off amplification factor of the grid with film sphere and porous structure in grid- controlled electron gun. Acta Physica Sinica,
2012, 61(7): 078502.
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Chen Hai-Feng, Guo Li-Xin. Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's. Acta Physica Sinica,
2012, 61(2): 028501.
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Zhang Xian-Gao, Fang Zhong-Hui, Chen Kun-Ji, Qian Xin-Ye, Liu Guang-Yuan, Xu Jun, Huang Xin-Fan, He Fei. Coulomb oscillations effect in dual gate controlled silicon nanowire. Acta Physica Sinica,
2011, 60(2): 027304.
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Shi Juan, Li Jian, Qiu Bing, Li Hua-Bing. Lattice Boltzmann simulation of particles moving in a vortex flow. Acta Physica Sinica,
2009, 58(8): 5174-5178.
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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica,
2009, 58(1): 536-540.
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2008, 57(4): 2427-2431.
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2007, 56(9): 5323-5329.
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2005, 54(2): 511-516.
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2003, 52(10): 2363-2367.
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YUE LI-JUAN, CHEN YAN-YAN, PENG JIAN-HUA. A CIRCUIT EXPERIMENT FOR CONTROLLING HYPERCHAOS BY MEANS OF PROPORTIONAL PERIODIC PULSE PERTURBATION TO THE SYSTEM VARIABLES. Acta Physica Sinica,
2001, 50(11): 2097-2102.
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ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI. STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE. Acta Physica Sinica,
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2000, 49(12): 2507-2513.
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