[1] |
Zhou Mei, Zhao De-Gang. Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode. Acta Physica Sinica,
2016, 65(7): 077802.
doi: 10.7498/aps.65.077802
|
[2] |
Tang Bin, Cao Chao, Yin Wei, Sun Yong, Liu Bin. Neutron holography simulation based on different sample rotations. Acta Physica Sinica,
2015, 64(24): 242801.
doi: 10.7498/aps.64.242801
|
[3] |
Yang Shuang-Bo. Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well. Acta Physica Sinica,
2014, 63(5): 057301.
doi: 10.7498/aps.63.057301
|
[4] |
Wang Wen-Juan, Wang Hai-Long, Gong Qian, Song Zhi-Tang, Wang Hui, Feng Song-Lin. External electric field effect on exciton binding energy in InGaAsP/InP quantum wells. Acta Physica Sinica,
2013, 62(23): 237104.
doi: 10.7498/aps.62.237104
|
[5] |
Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica,
2013, 62(15): 157301.
doi: 10.7498/aps.62.157301
|
[6] |
Yang Yong-Fu, Fu Rong-Guo, Zhang Yi-Jun, Wang Xiao-Hui, Zou Ji-Jun. Effect of surface potential barrier on electron escape probability of GaN photocathode. Acta Physica Sinica,
2012, 61(6): 068501.
doi: 10.7498/aps.61.068501
|
[7] |
Yang Yong-Fu, Fu Rong-Guo, Ma Li, Wang Xiao-Hui, Zhang Yi-Jun. Effect of surface potential barrier on quantum efficiency decay of reflection-mode GaN photocathode. Acta Physica Sinica,
2012, 61(12): 128504.
doi: 10.7498/aps.61.128504
|
[8] |
Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu, Lu Yun. Interface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica,
2010, 59(11): 7986-7990.
doi: 10.7498/aps.59.7986
|
[9] |
Zhu Hai-Na, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Kong Chao, Yan Guang, Gong Wei. Influence of well structure on efficiency of organic light-emitting diodes. Acta Physica Sinica,
2010, 59(11): 8093-8097.
doi: 10.7498/aps.59.8093
|
[10] |
Yin Ji-Wen, Xiao Jing-Lin, Yu Yi-Fu, Wang Zi-Wu. The effect of Coulomb potential to the decoherence of the parabolic quantum dot qubit. Acta Physica Sinica,
2008, 57(5): 2695-2698.
doi: 10.7498/aps.57.2695
|
[11] |
Wang Li, Zhang Xiao-An, Yang Zhi-Hu, Chen Xi-Meng, Zhang Hong-Qiang, Cui Ying, Shao Jian-Xiong, Xu Xu. The coulomb potential energy effect on the intensity of the characteristic lines at highly charged ion incendence on Al surface. Acta Physica Sinica,
2008, 57(1): 137-142.
doi: 10.7498/aps.57.137
|
[12] |
Yang Guang, P. V. Santos. Photoluminescence of GaAs(110) quantum wells modulated by surface acoustic waves. Acta Physica Sinica,
2006, 55(8): 4327-4331.
doi: 10.7498/aps.55.4327
|
[13] |
Zhu Li , Zheng Hou-Zhi, Tan Ping-Heng, Zhou Xia, Ji Yang, Yang Fu-Hua, Li Gui-Rong, Zeng Yu-Xin. Influence of level filling on optical properties of quantum well. Acta Physica Sinica,
2004, 53(12): 4334-4340.
doi: 10.7498/aps.53.4334
|
[14] |
Lin Shang-Jin. . Acta Physica Sinica,
2002, 51(9): 2057-2056.
doi: 10.7498/aps.51.2057
|
[15] |
LIN FENG, SHENG CHI, KE LIAN, ZHU JIAN-HONG, GONG DA-WEI, ZHANG SHENG-KUN, YU MIN-FENG, FAN YONG-LIANG, WANG XUN. GROUND STATE ENERGY LEVEL OF Si-BASE QUANTUM WELLS DETECTED BY ADMITTANCE SPECTROSCOPY. Acta Physica Sinica,
1998, 47(7): 1171-1179.
doi: 10.7498/aps.47.1171
|
[16] |
XU ZHI ZHONG. THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001). Acta Physica Sinica,
1997, 46(4): 775-782.
doi: 10.7498/aps.46.775
|
[17] |
JIN KAI-JUAN, PAN SHAO-HUA, YANG GUO-ZHEN. . Acta Physica Sinica,
1995, 44(10): 1615-1621.
doi: 10.7498/aps.44.1615
|
[18] |
LU FANG, JIANG JIA-YU, GONG DA-WEI, SUN HENG-HUI. MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY. Acta Physica Sinica,
1994, 43(2): 289-296.
doi: 10.7498/aps.43.289
|
[19] |
ZHU JIA-LIN. COUPLING EFFECT BETWEEN A SHALLOW-IMPURITY POTENTIAL AND A NARROW QUANTUM-WELL. Acta Physica Sinica,
1989, 38(7): 1093-1102.
doi: 10.7498/aps.38.1093
|
[20] |
ZHENG WEI-MOU, LIU JI-XIN. EXACTLY SOLVABLE MODELS FOR QUANTUM DOUBLE-WELL POTENTIALS. Acta Physica Sinica,
1985, 34(12): 1658-1664.
doi: 10.7498/aps.34.1658
|