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- Yang Yu2,
- Lu Xue-Kun2,
- Huang Da-Ming2,
- Jiang Zui-Min2,
- Yang Min2,
- Zhan Yi2,
- Gong Da-Wei2,
- Chen Xiang-Jun2,
- Hu Ji-Huang2,
- Zhang Xiang-Jiu2,
- Zhao Guo-Qing1
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(1)复旦大学物理二系,上海200433; (2)复旦大学应用表面物理国家重点实验室,上海200433
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[1] Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217. doi: 10.7498/aps.64.154217 [2] Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica, 2013, 62(15): 157301. doi: 10.7498/aps.62.157301 [3] Liu Li-Xiang, Dong Li-Juan, Liu Yan-Hong, Yang Cheng-Quan, Shi Yun-Long. Properties of photonic quantum well structures containing left-handed materials. Acta Physica Sinica, 2012, 61(13): 134210. doi: 10.7498/aps.61.134210 [4] Lü You-Ming, Mei Ting, Su Shi-Chen. Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates. Acta Physica Sinica, 2011, 60(9): 096801. doi: 10.7498/aps.60.096801 [5] Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue. Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102. doi: 10.7498/aps.60.068102 [6] Huang Rui, Wang Dan-Qing, Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan. Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer. Acta Physica Sinica, 2010, 59(8): 5823-5827. doi: 10.7498/aps.59.5823 [7] Huang Rui, Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan. Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica, 2009, 58(3): 2072-2076. doi: 10.7498/aps.58.2072 [8] Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong. Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study. Acta Physica Sinica, 2009, 58(12): 8612-8616. doi: 10.7498/aps.58.8612 [9] Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica, 2005, 54(11): 5344-5349. doi: 10.7498/aps.54.5344 [10] Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954. doi: 10.7498/aps.54.2950 [11] Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao. Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909. doi: 10.7498/aps.54.3905 [12] Wang Hua. Studies on the preparation and characterization of Bi4Ti3O12 thin films on p-Si substrates. Acta Physica Sinica, 2004, 53(4): 1265-1270. doi: 10.7498/aps.53.1265 [13] Ji Ai-Ling, Ma Li-Bo, Liu Cheng, Wang Yong-Qian. Low temperature fabrication of nanostructured Si-SiOx and Si-SiNx composite films and their photoluminescence features. Acta Physica Sinica, 2004, 53(11): 3818-3822. doi: 10.7498/aps.53.3818 [14] WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU. C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465. doi: 10.7498/aps.50.2461 [15] LIN FENG, SHENG CHI, KE LIAN, ZHU JIAN-HONG, GONG DA-WEI, ZHANG SHENG-KUN, YU MIN-FENG, FAN YONG-LIANG, WANG XUN. GROUND STATE ENERGY LEVEL OF Si-BASE QUANTUM WELLS DETECTED BY ADMITTANCE SPECTROSCOPY. Acta Physica Sinica, 1998, 47(7): 1171-1179. doi: 10.7498/aps.47.1171 [16] YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN. Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984. doi: 10.7498/aps.47.978 [17] YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN. INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746. doi: 10.7498/aps.46.740 [18] WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE. ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING. Acta Physica Sinica, 1994, 43(5): 823-828. doi: 10.7498/aps.43.823 [19] WANG SHAN-ZHONG, LI DAO-HUO. A STUDY ON LASER-PREPARATION AND ENERGY- LEVEL STRUCTURE OF NANOMETER SIZED a-Si3N4 PARTICLES. Acta Physica Sinica, 1994, 43(4): 627-631. doi: 10.7498/aps.43.627 [20] LI XIAN-HUANG, LU FANG, SUN HENG-HUI. VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159. doi: 10.7498/aps.42.1153
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Publishing process
- Received Date:
13 January 1994
- Published Online:
05 March 1995
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