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2024, 73(13): 138502.
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Zhang Xing, Liu Yu-Lin, Li Gang, Yan Shao-An, Xiao Yong-Guang, Tang Ming-Hua. Three-dimensional numerical simulation of single event upset effect based on 55 nm DICE latch unit. Acta Physica Sinica,
2024, 73(6): 066103.
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Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan. Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica,
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Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Liu Ye, Zhong Xiang-Li, Ouyang Xiao-Ping, Ding Li-Li, Lu Chao, Zhang Hong, Feng Ya-Hui. Simulation research on single event effect of N-well resistor. Acta Physica Sinica,
2023, 72(2): 026102.
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Cui Yi-Xin, Ma Ying-Qi, Shangguan Shi-Peng, Kang Xuan-Wu, Liu Peng-Cheng, Han Jian-Wei. Research on Single Event Burnout of GaN power devices with femtosecond pulsed laser. Acta Physica Sinica,
2022, 71(13): 136102.
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica,
2021, 70(11): 116102.
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2021, 70(8): 085203.
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2020, 69(9): 098502.
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2019, 68(5): 052901.
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2018, 67(23): 237803.
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2014, 63(19): 193601.
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2014, 63(1): 018501.
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2013, 62(17): 176106.
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2010, 59(1): 649-654.
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2009, 58(12): 8651-8656.
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2009, 58(3): 1510-1516.
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