[1] |
Li Feng, Xiao Chuan-Yun, Kan Er-Jun, Lu Rui-Feng, Deng Kai-Ming. Density functional study on the different behaviors of Pd and Pt coating on graphene. Acta Physica Sinica,
2014, 63(17): 176802.
doi: 10.7498/aps.63.176802
|
[2] |
Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming. STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica,
2012, 61(6): 066801.
doi: 10.7498/aps.61.066801
|
[3] |
Shi Gao-Ming, Zou Zhi-Qiang, Sun Li-Min, Li Wei-Cong, Liu Xiao-Yong. Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates. Acta Physica Sinica,
2012, 61(22): 227301.
doi: 10.7498/aps.61.227301
|
[4] |
Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
doi: 10.7498/aps.60.098108
|
[5] |
Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue. Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica,
2011, 60(6): 068102.
doi: 10.7498/aps.60.068102
|
[6] |
Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi. STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica,
2010, 59(1): 636-642.
doi: 10.7498/aps.59.636
|
[7] |
Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan. Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica,
2008, 57(2): 1266-1270.
doi: 10.7498/aps.57.1266
|
[8] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin. Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica,
2008, 57(2): 1236-1240.
doi: 10.7498/aps.57.1236
|
[9] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
|
[10] |
Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo. Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica,
2003, 52(6): 1465-1468.
doi: 10.7498/aps.52.1465
|
[11] |
Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun. . Acta Physica Sinica,
2002, 51(5): 1017-1021.
doi: 10.7498/aps.51.1017
|
[12] |
HU YING. SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica,
2001, 50(12): 2452-2455.
doi: 10.7498/aps.50.2452
|
[13] |
SHAO QING-YI, FANG RONG-CHUAN, LIAO YUAN, HAN SI-JIN. INFLUENCE OF COVERAGE ON NUCLEATION AND GROWTH OF THIN FILMS. Acta Physica Sinica,
1999, 48(8): 1509-1513.
doi: 10.7498/aps.48.1509
|
[14] |
LI MING, XU MING, LIU HUI-ZHOU. KINETICS OF ORDERING AND 2-DIMENSIONAL GROWTH OF Ag ON Si(111). Acta Physica Sinica,
1996, 45(8): 1380-1389.
doi: 10.7498/aps.45.1380
|
[15] |
ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN. THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1991, 40(2): 253-261.
doi: 10.7498/aps.40.253
|
[16] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
[17] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(10): 1607-1612.
doi: 10.7498/aps.37.1607
|
[18] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
doi: 10.7498/aps.36.524
|
[19] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|
[20] |
XU YONG-NIAN, ZHANG KAI-MING. THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica,
1984, 33(11): 1619-1623.
doi: 10.7498/aps.33.1619
|