ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP

HU WEI-MIN; MAO DE-QIANG; REN SHANG-YUAN; LI MING-FU

doi:10.7498/aps.36.1330

Abstract
The wavefunctions of the A1 and E states of the ideal divacancy in GaAs, GaP are calculated using the basic equations given in ref. [1] and the tight-binding Hamiltonian given by P. Vogl et al. It is shown that the largest part of the wavefunctions of divacancy states is on the three nearest Ga atoms of the As or P vacancy, the rest part of the wavefunction decreases slowly and non-monotonically as the distance from the defect increases.
Authors and contacts
HU WEI-MIN¹,

MAO DE-QIANG¹,

REN SHANG-YUAN¹,

LI MING-FU²

(1)中国科学技术大学物理系; (2)中国科学技术大学研究生院
References

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Vol. 36, Issue 10 - 1987-05-20

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ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP

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ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP

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