| [1] |
Liu Qi-Neng. Analytic method of studying defect mode of 1D doped phononic crystal. Acta Physica Sinica,
2011, 60(4): 044302.
doi: 10.7498/aps.60.044302
|
| [2] |
Zhang Hai-Feng, Ma Li, Liu Shao-Bin. Defect mode properties of magnetized plasma photonic crystals. Acta Physica Sinica,
2009, 58(2): 1071-1076.
doi: 10.7498/aps.58.1071
|
| [3] |
Ma Li, Zhang Hai-Feng, Liu Shao-Bin. Study on the defect mode properties of unmagnetized plasma photonic crystals. Acta Physica Sinica,
2008, 57(8): 5089-5094.
doi: 10.7498/aps.57.5089
|
| [4] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica,
2008, 57(7): 4119-4124.
doi: 10.7498/aps.57.4119
|
| [5] |
Cai Xu-Hong, Lin Xu-Sheng, Shi Quan, Zhao Nian-Shun. Resonant frequency shift in coupled photonic crystal defects described by the tight-binding method. Acta Physica Sinica,
2007, 56(5): 2742-2746.
doi: 10.7498/aps.56.2742
|
| [6] |
Liu Hai-Lan, Gu Mu, Zhang Rui, Xu Rong-Kun, Li Guang-Wu, Ouyang Xiao-Ping. Electronic structure of intrinsic defects and mechanism of donor-acceptor pair luminescence in CuI crystal. Acta Physica Sinica,
2006, 55(12): 6574-6579.
doi: 10.7498/aps.55.6574
|
| [7] |
Liu Feng-Song, Gu Mu, Yao Ming-Zhen, Liang Ling, Chen Ming-Nan. Theoretical study on defects in PbWO4:Y crystal. Acta Physica Sinica,
2003, 52(9): 2274-2279.
doi: 10.7498/aps.52.2274
|
| [8] |
KANG JUN-YONG, HUANG QI-SHENG, T.OGAWA. DEFECTS IN GaN EPILAYERS. Acta Physica Sinica,
1999, 48(7): 1372-1380.
doi: 10.7498/aps.48.1372
|
| [9] |
LI LI-JUN, WANG ZUO-XIN, WU JIN-LEI. POSITRON ANNIHILATION TIME STUDY OF DEFECTS IN Hg1-xCdxTe SINGLE CRYSTALS. Acta Physica Sinica,
1998, 47(5): 844-850.
doi: 10.7498/aps.47.844
|
| [10] |
LU FANG, GONG DA-WEI, SUN HENG-HUI. A STUDY OF THE INTERFACIAL DEFECTS IN MOLECULAR BEAM EPITAXIAL SILICON. Acta Physica Sinica,
1994, 43(7): 1129-1136.
doi: 10.7498/aps.43.1129
|
| [11] |
GAO FEI, YANG SHUN-HUA. A STUDY ON MOVING SCREW DISLOCATION BY THE METHOD OF GAUGE FIELD THEORY FOR CRYSTAL DEFECTS. Acta Physica Sinica,
1990, 39(7): 81-87.
doi: 10.7498/aps.39.81
|
| [12] |
GAO FEI. EDGE DISLOCATION IN CRYSTAL DEFECT GAUGE FIELD. Acta Physica Sinica,
1990, 39(10): 1591-1598.
doi: 10.7498/aps.39.1591
|
| [13] |
YANG CUI-YING, ZHANG DAO-FAN, WU XING, ZHOU YU-QING, FENG GUO-GUANG. ANALYTICAL ELECTRON MICROSCOPY OF DEFECTS IN PHOTOREFRACTIVE BaTiO3 CRYSTAL. Acta Physica Sinica,
1989, 38(12): 2003-2007.
doi: 10.7498/aps.38.2003
|
| [14] |
FENG XI-QI, YING JI-EENG, WANG JIN-CHANG, LIU JIAN-CHENG. THE OH ABSORPTION SPECTRUM As A PROBE FOR DEFECT STRUCTURE OF LiNbO3 CRYSTAL. Acta Physica Sinica,
1988, 37(12): 2062-2067.
doi: 10.7498/aps.37.2062
|
| [15] |
WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI. STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS. Acta Physica Sinica,
1988, 37(7): 1203-1208.
doi: 10.7498/aps.37.1203
|
| [16] |
WANG TIAN-MIN, MICHIO SHIMOTOMAI, MASAO DOYAMA. STUDY OF THE LATTICE DEFECTS IN NiAl BY POSITRON ANNIHILATION. Acta Physica Sinica,
1986, 35(6): 704-708.
doi: 10.7498/aps.35.704
|
| [17] |
WANG SHU-YING, JI GUO-KUN, HOU YAO-YONG, LI LI. POSITRON ANNIHILATION STUDY OF CRYSTAL DEFECTS DEVELOPED DURING FATIGUE PROCESS OF PURE POLYCRYSTALLINE Ni. Acta Physica Sinica,
1985, 34(12): 1627-1633.
doi: 10.7498/aps.34.1627
|
| [18] |
GUO CHANG-LIN. DISLOCATIONS IN α-SILICON CARBIDE SINGLE CRYSTAL. Acta Physica Sinica,
1982, 31(11): 1511-1525.
doi: 10.7498/aps.31.1511
|
| [19] |
CAI TIAN-HAI. DEFECTS ETCHING PITS OBSERVATIONS AND ANALYSES ON EPITAXIAL SILICON CLEAVAGE SURFACE. Acta Physica Sinica,
1980, 29(2): 265-269.
doi: 10.7498/aps.29.265
|
| [20] |
FENG DUAN. PROGRESS IN THE STUDIES OF LATTICE DEFECTS. Acta Physica Sinica,
1979, 28(2): 141-151.
doi: 10.7498/aps.28.141
|
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