TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE

XU YONG-NIAN

doi:10.7498/aps.30.1400

Abstract
In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.
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XU YONG-NIAN

1.
复旦大学物理系
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[11]	WANG XIAO, CAI JIAN-HUA. PLASMON THEORY OF THREE-DIMENSIONAL TIGHT-BINDING ELECTRON GAS. Acta Physica Sinica, 1993, 42(7): 1149-1156. doi: 10.7498/aps.42.1149
[12]	QIAO HAO, ZHANG KAI-MING. ADSORPTION OF ALKALI METAL ON GaAs(110) SURFACE. Acta Physica Sinica, 1991, 40(11): 1840-1845. doi: 10.7498/aps.40.1840
[13]	Wang Xiao;Cai Jiang-hua. PLASMON THEORY OF THREE-DIMENSIONAL TIGHT-BINDING ELECTRON GAS. Acta Physica Sinica, 1991, 40(7): 1149-1156. doi: 10.7498/aps.40.1149
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[15]	LAN TIAN, XU FEI-YUE. A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica, 1989, 38(3): 357-365. doi: 10.7498/aps.38.357
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[20]	ZHANG KAI-MING, YE LING. THE SURFACE STRUCTURE OF GaAs(110). Acta Physica Sinica, 1980, 29(6): 686-692. doi: 10.7498/aps.29.686

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Vol. 30, Issue 10 - 1981-05-20

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