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拓扑半金属中的手性反常通常是用负磁阻来检测. 然而, 手性反常导致的负磁阻对磁场和电流的夹角比较敏感, 这给测量带来了挑战. 最近, 作为一种新兴实验手段, 面内霍尔效应被越来越多地应用于拓扑半金属中手性反常的探测. 本文通过将拓扑Nodal-line半金属ZrSiSe块体机械剥离制备成的介观器件, 对其面内霍尔效应进行了测量并探究其起源. 尽管测量数据与拓扑半金属中手性反常导致的面内霍尔效应理论公式拟合得很好, 但各向异性磁电阻的分析结果表明, 负磁阻并不存在. 更进一步地, 根据最近报道提出手性反常存在的判据, 在一个手性反常主导的系统中, 以磁场和电流夹角为参数的Rxx – Ryx 关系曲线呈现为随磁场变化的一系列同心圆, 而在本文ZrSiSe器件的输运实验中, 表现为非同心圆的形式. 结合分析, 本文排除了手性反常的存在, 并推断各向异性磁电阻才是其面内霍尔效应的起因.Planar Hall effect(PHE) is a newly emerging experimental tool to detect chiral anomaly and nontrivial Berry curvature in topological semimetals, as chiral-anomaly-induced negative magnetoresistance is sensitive to the angle between magnetic field B and current I. Here we demonstrate the PHE in a topological nodal-line semimetal ZrSiSe device by electric transport measurement. According to our analysis, we conclude that the PHE results from the trivial anisotropic magnetoresistance (AMR). We argue that there is no inevitability between PHE and chiral anomaly, and some other mechanisms can induce PHE. This work indicates that PHE cannot be considered as evidence of chiral anomaly and one may seek for non-topological origin in such studies.
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Keywords:
- topological semimetal /
- planar Hall effect /
- chiral anomaly
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图 1 ZrSiSe单晶及纳米片的表征 (a) ZrSiSe的晶体结构; (b) ZrSiSe晶体的EDS谱; (c) ZrSiSe晶体(00n)面的X射线衍射谱; (d) 零磁场下ZrSiSe纳米片电阻随温度的变化曲线. 内插图是纳米片器件的光学图, 其中白色基准尺为5 μm
Fig. 1. The characterization of the ZrSiSe single crystals and nanoflakes: (a) The crystal structure of ZrSiSe; (b) the EDS spectrum of ZrSiSe crystal; (c) the single crystal X-ray-diffraction data of the (00n) surfaces of the sample; (d) the resistance varies with temperature at zero field. The inset is the optical graph of ZrSiSe flake device, and the white scale bar is 5 μm.
图 2 ZrSiSe纳米片的SdH振荡 (a) 垂直磁场下ZrSiSe纳米片在不同温度下的磁阻; (b) 提取到的磁阻关于1/B的SdH振荡; (c) 图(b)中振荡的快速傅里叶变换; (d) 图(c)中随温度变化的FFT振幅. 实线是利用Lifshitz-Kosevich公式进行的拟合, 得到有效质量为0.13 me
Fig. 2. The SdH oscillations of ZrSiSe nanoflakes: (a) Magnetoresistance of ZrSiSe nanoflakes under perpendicular magnetic field at different temperatures; (b) the extracted SdH oscillations of magnetoresistance verus 1/B; (c) fast Fourier transformation spectra of the oscillation in (b); (d) the temperature dependence of FFT amplitude in (c). The solid line is a fit to the Lifshitz-Kosevich formula and gives the cyclotron effective mass of 0.13 me.
图 3 ZrSiSe纳米片中PHE的观测 (a) T = 2 K时, 不同磁场下的PHE以及相应的拟合曲线; (b) T = 2 K时, PHE振幅随磁场强度大小的变化. 内插图是PHE测量的器件示意图; (c) B = 9 T时, 不同温度下的PHE以及相应的拟合曲线; (d) B = 9 T时, PHE振幅随温度的变化
Fig. 3. PHE measurement in ZrSiSe nanoflakes: (a) The measured PHE and the corresponding fitting curves under different B fields when the temperature is 2 K; (b) the amplitude of PHE varies with magnetic field when temperature is 2 K. The inset displays the schematic of the device configuration for PHE measurement; (c) angle dependence of the planar Hall resistance taken at different temperatures when the field is 9 T; (d) the amplitude of PHE varies with temperature when the field is 9 T.
图 4 ZrSiSe中PHE的起源 (a) T = 2 K时, 不同磁场下的平面AMR. 红色实线是利用公式拟合得到的曲线; (b) T = 2 K时, 平面AMR振幅随磁场的变化. 青色实线是对实验数据点进行的幂函数拟合曲线; (c) 从图(a)中提取的R⊥和R||随磁场的变化; (d) 不同磁场下, 以θ为参量得到的Rxx-Ryx关系曲线
Fig. 4. Origin of the measured PHE: (a) In-plane AMR verus angle θ at various fields when temperature is 2 K. Solid red curves represent the fitting curves; (b) the amplitude of AMR varies with field at 2 K. The cyan curve is the power law fit curve for the experimental data points; (c) R⊥ and R|| extracted from the experimental date in panel (a). the red and blue solid curves represent the power law fit curves for R⊥ and R||, respectively; (d) the orbits obtained by plotting Rxx and Ryx with θ as the parameter at specific magnetic field.
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[1] 李兆国, 张帅, 宋凤麒 2015 64 097202
Google Scholar
Li Z G, Zhang S, Song F Q 2015 Acta Phys. Sin. 64 097202
Google Scholar
[2] 王青, 盛利 2015 9 097302
Google Scholar
Wang Q, Sheng L 2015 Acta Phys. Sin. 9 097302
Google Scholar
[3] 王怀强, 杨运友, 鞠艳, 盛利, 邢定钰 2013 62 037202
Wang H Q, Yang Y Y, Ju Y, Sheng L, Xing D Y 2013 Acta Phys. Sin. 62 037202
[4] 伊长江, 王乐, 冯子力, 杨萌, 闫大禹, 王翠香, 石友国 2015 67 128102
Google Scholar
Yin C J, Wang L, Feng Z L, Yang M, Yan D Y, Wang C X, Sin Y G 2015 Acta Phys. Sin. 67 128102
Google Scholar
[5] Gong Y, Guo J W, Li J H, Zhu K J, Liao M H, Liu X Z, Zhang Q H, Gu L, Tang L, Feng X, Zhang D, Li W, Song C L, Wang L L, Yu P, Chen X, Wang Y Y, Yao H, Duan W H, Xu Y, Zhang S C, Ma X C, Xue Q K, He K 2019 Chin. Phys. Lett. 36 076801
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[36] Smit J 1951 Physica 17 612
Google Scholar
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Google Scholar
[38] Nandy S, Sharma G, Taraphder A, Tewari S 2017 Phys. Rev. Lett. 119 176804
Google Scholar
[39] West F G 1963 J. Appl. Phys. 34 1171
Google Scholar
[40] Marsocci V A, Chen T T 1969 J. Appl. Phys. 40 3361
Google Scholar
[41] Taskin A A, Legg H F, Yang F, Sasaki S, Kanai Y, Matsumoto K, Rosch A, Ando Y 2017 Nat. Commun. 8 1340
Google Scholar
[42] Wu B, Pan X C, Wu W K, Fei F C, Chen B, Liu Q Q, Bu H J, Cao L, Song F Q, Wang B G 2018 Appl. Phys. Lett. 113 011902
Google Scholar
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Google Scholar
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