光子石墨烯中赝磁场作用下的谷霍尔效应

邓富胜; 孙勇; 刘艳红; 董丽娟; 石云龙

doi:10.7498/aps.66.144204

摘要

将石墨烯中赝磁场的产生机理运用于光子石墨烯，通过在光子石墨烯中引入晶格有规律单轴形变的方式，理论分析得到了谷依赖的均匀赝磁场，并通过数值模拟的方法观察到明显的谷霍尔效应.这种谷霍尔效应的显著程度随晶格形变度的增加而加强.在具有一定损耗的电介质材料构成的形变光子石墨烯中仍可观察到明显的谷霍尔效应.随着电介质材料损耗的增加，谷霍尔效应导致的波束转弯效果依然能够保持，只是强度逐渐变弱.类似于自旋电子学中的自旋霍尔效应，这种光子石墨烯中等效赝磁场作用下的谷霍尔效应在未来谷极化器件的设计和应用中具有重要意义.

关键词:

Abstract

Like the spin in spintronics, the valley index in graphene can be viewed as a new carrier of information, which is useful for designing modern electronic devices. Recently, we have applied the concept of valleytronics to photonic graphene, revealed valley-dependent beam splitting effect and realized pseudomagnetic field. The pseudomagnetic field enables a novel manipulation of photons. In this paper, the photonic analogy of valley Hall effect in uniaxially distorted photonic graphene is investigated. It is found that photons in two valleys are subjected to pseudomagnetic fields that are equal in strength but opposite in sign. With the increasing of distortion, the valley Hall effect becomes stronger. In addition, it is found that the photonic valley Hall effect can still be maintained under the influence of loss, although the beam intensity decreases. The photonic analogy of valley Hall effect induced by pseudomagnetic field in uniaxially distorted photonic graphene may be very useful for controlling the flow of light in future valley-polarized devices.

Keywords:

作者及机构信息

1.
山西大同大学固体物理研究所, 大同 037009;

2.
山西大同大学, 微结构电磁功能材料省市共建山西省重点实验室, 大同 037009;

3.
山西大同大学, 新型微结构功能材料山西省高等学校重点实验室, 大同 037009;

4.
同济大学, 先进微结构材料教育部重点实验室, 上海 200092

通信作者: 邓富胜, dengfusheng2005@163.com

基金项目: 国家自然科学基金（批准号：11604186，11674247，11504211）、山西省自然科学基金（批准号：201601D202011）、山西省科技攻关项目（批准号：2015031002-2）和大同市科技攻关项目（批准号：2016021，2015015，201308）资助的课题.

Authors and contacts

1.
Institute of Solid State Physics, Shanxi Datong University, Datong 037009, China;

2.
Shanxi Provincial Key Laboratory of Microstructure Electromagnetic Functional Materials, Shanxi Datong University, Datong 037009, China;

3.
Key Laboratory of New Microstructure Function Materials in Shanxi Province, Shanxi Datong University, Datong 037009, China;

4.
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Tongji University, Shanghai 200092, China

Corresponding author: Deng Fu-Sheng, dengfusheng2005@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11604186, 11674247, 11504211), the Natural Science Foundation of Shanxi Province, China (Grant No. 201601D202011), the Science and Technology Project of Shanxi Province, China (Grant No. 2015031002-2), and the Science and Technology Project of Datong, Shanxi Province, China (Grant Nos. 2016021, 2015015, 201308).

参考文献

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施引文献

[1]	Neto A C, Guinea F, Peres N M, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[2]	Xiao D, Yao W, Niu Q 2007 Phys. Rev. Lett. 99 236809
[3]	Mak K F, McGill K L, Park J, McEuen P L 2014 Science 344 1489
[4]	Zhang L, Niu Q 2015 Phys. Rev. Lett. 115 115502
[5]	Lu J, Qiu C, Ke M, Liu Z 2016 Phys. Rev. Lett. 116 093901
[6]	Ju L, Shi Z, Nair N, Lv Y, Jin C, Velasco J Jr, Ojeda-Aristizabal C, Analytis J, Wang F 2015 Nature 520 650
[7]	Li J, Wang K, McFaul K J, Zern Z, Ren Y, Watanabe K, Taniguchi T, Qiao Z, Zhu J 2016 Nature Nano. 11 1060
[8]	Yin L J, Jiang H, Qiao J B, He L 2016 Nature Commun. 7 11760
[9]	Lu J, Qiu C, Ye L, Fan X, Ke M, Zhang F, Liu Z 2017 Nat. Phys. 13 369
[10]	Ken-ichi S, Yoshiyuki K, Riichiro P S 2005 Theor. Phys. 113 63
[11]	Guinea F, Katsnelson M I, Geim A K 2010 Nat. Phys. 6 30
[12]	Levy N, Burke S A, Meaker K L, Panlasigui M, Zettl A, Guinea F, Castro Neto A H, Crommie M F 2010 Science 329 544
[13]	Wu Z, Zhai F, Peeters F M, Xu H Q, Chang K 2011 Phys. Rev. Lett. 106 176802
[14]	Jiang Y, Low T, Chang K, Katsnelson M I, Guinea F 2013 Phys. Rev. Lett. 110 046601
[15]	Zhang D, Seifert G, Chang K 2014 Phys. Rev. Lett. 112 096805
[16]	Guinea F, Geim A K, Katsnelson M I, Novoselov K S 2010 Phys. Rev. B 81 035408
[17]	Low T, Guinea F 2010 Nano Lett. 10 3551
[18]	Zandbergen S R, de Dood M J A 2010 Phys. Rev. Lett. 104 043903
[19]	Plotnik Y, Rechtsman M C, Song D, Heinrich M, Zeuner J M, Nolte S, Lumer Y, Malkova N, Xu J, Szameit A, Chen Z, Segev M 2013 Nat. Mater. 13 57
[20]	Rechtsman M C, Plotnik Y, Zeuner J M, Song D, Chen Z, Szameit A, Segev M 2013 Phys. Rev. Lett. 111 103901
[21]	Zeuner J M, Rechtsman M C, Nolte S, Szameit A 2014 Opt. Lett. 39 602
[22]	Crespi A, Corrielli G, Valle G D, Osellame R, Longhi S 2013 New J. Phys. 15 013012
[23]	Wang X, Jiang H T, Yan C, Sun Y, Li Y H, Shi Y L, Chen H 2013 Europhys. Lett. 103 17003
[24]	Rechtsman M C, Zeuner J M, Tnnermann A, Nolte S, Segev M, Szameit A 2013 Nat. Photon. 7 153
[25]	Schomerus H, Halpern N Y 2013 Phys. Rev. Lett. 110 013903
[26]	Deng F S, Sun Y, Wang X, Xue R, Li Y, Jiang H T, Shi Y L, Chang K, Chen H 2014 Opt. Express 22 23605
[27]	Deng F, Sun Y, Dong L, Liu Y, Shi Y 2017 J. Appl. Phys. 121 074501
[28]	Deng F S, Li Y M, Sun Y, Wang X, Guo Z W, Jiang H T, Shi Y L, Chang K, Chen H 2015 Opt. Lett. 40 3380
[29]	Albert J P, Jouanin C, Cassagne D, Monge D 2002 Opt. Quant. Electron. 34 251
[30]	Wolff C, Mack P, Busch K 2013 Phys. Rev. B 88 075201
[31]	Garcia-Pomar J L, Cortijo A, Nieto-Vesperinas M 2008 Phys. Rev. Lett. 100 236801

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