脉冲激光辐照液滴锡靶等离子体极紫外辐射的实验研究

陈鸿; 兰慧; 陈子琪; 刘璐宁; 吴涛; 左都罗; 陆培祥; 王新兵

doi:10.7498/aps.64.075202

摘要

采用波长13.5 nm的极紫外光作为曝光光源的极紫外光刻技术是最有潜力的下一代光刻技术之一, 它是半导体制造实现10 nm及以下节点的关键技术. 获得极紫外辐射的方法中, 激光等离子体光源凭借转换效率高、收集角度大、碎屑产量低等优点而被认为是最有前途的极紫外光源. 本文开展了脉冲TEA-CO2激光和Nd:YAG激光辐照液滴锡靶产生极紫外辐射的实验, 对极紫外辐射的谱线结构以及辐射的时空分布特性进行了研究.实验发现: 与TEA-CO2激光相比, 较高功率密度的Nd:YAG激光激发的极紫外辐射谱存在明显的蓝移; 并且激光等离子体光源可以认为是点状光源, 其极紫外辐射强度随空间角度变化近似满足Lambertian分布.

关键词:

Abstract

Extreme ultraviolet lithography (EUVL), which uses the extreme ultraviolet radiation at a wavelength of 13.5 nm, is the leading candidate of next generation lithography addressing not only the 10 nm half-pitch nodes, but several nodes beyond that. Among all the methods for getting EUV radiation, laser-produced plasma (LPP) light source is the most promising EUV light source because of its high conversion efficiency (CE), large collect angle and low debris output. In this paper, pulsed TEA-CO2 laser and Nd:YAG laser are used to irradiate tin droplets to obtain plasma EUV emission, and the properties of EUV radiation from the plasma are studied. Results show that the EUV emission spectra induced by Nd:YAG laser have an obvious blueshift as compared with those by CO2 laser. In addition, the LPP sources are point light sources, so that the angular distribution of EUV emission from LPP can be described by Lambertian distribution.

Keywords:

作者及机构信息

1.
华中科技大学, 光学与电子信息学院, 武汉 430074;

2.
华中科技大学, 武汉光电国家实验室, 武汉 430074;

3.
武汉工程大学, 理学院, 武汉 430073

基金项目: 国家自然科学基金青年科学基金(批准号: 11304235)资助的课题.

Authors and contacts

1.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

2.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;

3.
School of Science, Wuhan Institute of Technology, Wuhan 430073, China

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11304235).

参考文献

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[16]	Bob R, Luna B, Nadia G, Abhari R S 2012 Extreme Ultraviolet Lithography III 83222P San Jose, California United States, February 12 2012
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施引文献

[1]	Bakshi V 2009 EUV lithography (Bellingham: Spie Press) pp104
[2]	Brandt D C, Fomenkov I V, Farrar N R, Fontaine B L, Myers D W, Brown D J, Ershov A I, Böwering N R, Riggs D J, Rafac R J, Dea S D, Peeters R, Meiling H, Harned N, Smith D, Pirati A, Kazinczi R 2014 Extreme Ultraviolet (EUV) Lithography V90480C San Jose, California, United States, February 23-27 2014
[3]	Mizoguchi H, Nakarai H, Abe T, Ohta T, Nowak K M, Kawasuji Y, Tanaka H, Watanabe Y, Hori T, Kodama T, Shiraishi Y, Yanagida T, Yamada T, Yamazaki T, Okazaki S, Saitou T 2014 Extreme Ultraviolet (EUV) Lithography V 90480D San Jose, California, United States, February 23-27 2014
[4]	Abhari R S, Rollinger B, Giovannini A Z, Morris O, Henderson I, Ellwi S S 2012 Journal of MicroNanolithography, MEMS, MOEMS 11 021114
[5]	Giovannini A Z, Abhari R S 2013 Journal of Applied Physics 114 033303
[6]	Masnavi M, Szilagyi J, Parchamy H, Richardson M C 2013 Applied Physics Letters 102 164102
[7]	Ni Q L 2003 Ph. D. Dissertation (Changchun: University of Chinese Academy of Sciences) (in Chinese) [尼启良 2003 博士学位论文 (长春: 中国科学院研究生院, 长春光学精密机械与物理研究所)]
[8]	Jin C S, Wang Z S, Cao J L 2000 Optics and Precision Engineering 8 66 (in Chinese) [金春水, 王占山, 曹健林 2000 光学精密工程 8 66]
[9]	Cai Y, Wang W T, Yang M, Liu H S, Lu P X, Li R X, Xu Z Z 2008 Acta Phys. Sin. 57 5100 (in Chinese) [蔡懿, 王文涛, 杨明, 刘建胜, 陆培祥, 李儒新, 徐至展 2008 57 5100]
[10]	Zhao Y P, Xu Q, Xiao D L, Ding N, Xie Y, Li Q, Wang Q 2013 Acta Phys. Sin. 62 245204 (in Chinese) [赵永蓬, 徐强, 肖德龙, 丁宁, 谢耀, 李琦, 王骐 2013 62 245204]
[11]	Dou Y P, Sun C K, Liu C Z, Gao J, Hao Z Q, Lin J Q 2014 Chin. Phys. B 23 075202
[12]	Wang H C, Wang Z S, Li F S, Qin S J, Du Y, Wang L, Zhang Z, Chen L Y 2004 Acta Phys. Sin. 53 2368 (in Chinese) [王洪昌, 王占山, 李佛生, 秦树基, 杜芸, 王利, 张众, 陈玲燕 2004 53 2368]
[13]	Wu T, Wang X B, Wang S Y, Tang J, Lu P X, Lu H 2012 Journal of Applied Physics 111 063304
[14]	Wu T, Wang X B, Tang J, Rao Z M, Wang S Y 2011 Laser Technology 35 800 (in Chinese) [吴涛, 王新兵, 唐建, 饶志明, 王少义 2011 激光技术 35 800]
[15]	Wu H Y, Wu Y G, Wang Z H, Lu G, Ling L J, Xia Z H, Chen N B 2011 Acta Photonica Sinica 40 0001 (in Chinese) [伍和云, 吴永刚, 王振华, 吕刚, 凌磊婕, 夏子奂, 陈乃波 2011 光子学报 40 0001]
[16]	Bob R, Luna B, Nadia G, Abhari R S 2012 Extreme Ultraviolet Lithography III 83222P San Jose, California United States, February 12 2012
[17]	Wang J L, Chen W W, Cai L, Ma Y R, Liu Y S, Lv G S, Shao M J, Jin Y Q, Sang F T 2006 High Power Laser and Particle Beams 18 935 (in Chinese) [王景龙, 陈文武, 蔡龙, 马月仁, 刘宇时, 吕国盛, 邵明君, 金玉奇, 桑凤亭 2006 强激光与粒子束 18 935]
[18]	Cui Y Q, Wang W M, Sheng Z M, Li Y T, Zhang J 2013 Plasma Physics and Controlled Fusion 55 085008
[19]	Bakshi V 2006 EUV Sources for Lithography (Bellingham, WA: Spie Press) p113

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