三维集成电路堆叠硅通孔动态功耗优化

董刚; 武文珊; 杨银堂

doi:10.7498/aps.64.026601

摘要

三维集成电路堆叠硅通孔结构具有良好的温度和热特性. 提出了一种协同考虑延时、面积与最小孔径的堆叠硅通孔动态功耗优化办法. 在提取单根硅通孔寄生电学参数的基础上, 分析了硅通孔的直径对多层硅通孔的功耗与延时性能的影响, 由此构建了分层逐级缩减堆叠硅通孔结构, 分析了硅通孔高度与氧化层厚度的影响. 结果表明, 该模型可在牺牲少许延时的情况下显著优化动态功耗, 在允许牺牲延时5%的情况下, 堆叠硅通孔的动态功耗最多可减少19.52%.

关键词:

Abstract

Stack-through silicon via (TSV) used in three-dimensional integrated circuit has good temperature and heat transfer characteristics. A novel model for optimizing the dynamic power consumption based on stacked-TSV is proposed in this paper, in which delay, area and minimum aperture are comprehensively considered. After extracting single TSV parasitic electrical parameters, we analyze the influences of TSV size on multilayer TSV power consumption and delay performance, thereby building the hierarchical reduction TSV structure step by step. Moreover, the influences of TSV height and thickness of oxide layer are discussed. Results show that the model can significantly improve the dynamic power consumption at the expense of little delay. The power consumption optimization reduction is up to 19.52% with 5% delay penalty.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子所, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071

基金项目: 国家自然科学基金(批准号: 61334003)资助的课题.

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xian 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61334003).

参考文献

[1]	Lee Y J, Lim S K 2011 IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 30 1635
[2]	Zhao X, Minz J, Lim S K 2011 IEEE Trans. Compon. Packag. Manuf. Technol. 1 247
[3]	Zhu Z M, Wan D J, Yang Y T 2010 Acta Phys. Sin. 59 4837 (in Chinese) [朱樟明, 万达经, 杨银堂 2010 59 4837]
[4]	Khan N H, Alam S M, Hassoun S 2011 IEEE Trans. Very Large Scale Integr. Syst. (VLSI) 19 647
[5]	Liu W, Du H, Wang Y, Ma Y, Xie Y, Quan J, Yang H 2013 International Symposium on Quality Electronic Design Santa Clara, USA, March 4-6, 2013 p300
[6]	Wei S H, Lee Y M, Ho C T, Sun C T, Cheng L C 2013 International Symposium on VLSI Design, Automation and Test Hsinchu, China, April 22-24, 2013 p1
[7]	Kim J, Cho J, Pak J S, Song T 2010 International Conference on Electrical Performance of Electronic Packaging and Systems Austin, USA, October 25-27, 2010 p41
[8]	Zhao X, Lim S K 2010 Asia and South Pacific Design Automation Conference Taipei, China, January 18-21, 2010 p175
[9]	Sai M P D, Shang Y H, Tan C S, Lim S K 2013 IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 32 1734
[10]	Qian L B, Zhu Z M, Xia Y S, Ding R X, Yang Y T 2014 Chin. Phys. B 23 038402
[11]	Chen H T, Lin H L, Wang Z C, Hwang T T 2011 DATE Conference and Exhibition Grenoble, France, March 14-18, 2011 p1
[12]	Yang P, Chen H T, Hwang T T 2013 Asia and South Pacific Design Automation Conference Yokohama, Japan, January 22-25, 2013 p699
[13]	Zhao W S, Wang X P, Xu X L, Yin W Y 2010 Proc. IEEE Electrical Design of Advanced Packaging & Systems Symposium Singapore, December 7-9, 2010 p1
[14]	Chua T T, Ho S W, Li H Y, Khong C H, Liao E B, Chew S P, Lee W S, Lim L S, Pang X F, Kriangsak S L, Ng C, Nathapong S, Toh C H 2010 International Symposium on Quality Electronic Design Las Vegas, USA, June 1-4, 2010 p798
[15]	Han K J, Swaminathan M, Bandyopadhyay T 2010 IEEE Trans. Adv. Package 33 804
[16]	Todri A, Kundu S, Girard P, Bosio A, Dilillo L 2013 IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 21 306
[17]	Savidis I, Friedman E G 2009 IEEE Trans. Electron Dev. 56 1873
[18]	Kim J, Pak J S, Cho J, Song E 2011 IEEE Trans. Compon. Packag. Manuf. Technol. 1 181
[19]	Hall S H, Hall G W, McCall J A 2000 High-Speed Digital System Design: A Handbook of Interconnect Theory and Design Practices (New York: John Wiley & Sons) p205
[20]	Liu E X, Li E P, Ewe W B, Lee H M 2011 IEEE Trans. Microw. Theory Tech. 59 1454
[21]	Katti G, Stucchi M, Meyer K D, Dehaene W 2010 IEEE Trans. Electron Dev. 57 256
[22]	Kim D Y, Kim J H, Pak J S, Lee H D, Lee J H, Park K W, Kim J H 2012 IEEE Electronic Components and Technology Conference California, USA, May 29-30, 2012 p1945
[23]	Elmiligi H, El-Kharashi M W, Gebali F 2013 Microprocess. Microsy. 37 530
[24]	Dong G, Yang Y, Chai C C, Yang Y T 2010 Chin. Phys. B 19 110202
[25]	Qian L B, Zhu Z M, Yang Y T 2012 Acta Phys. Sin. 61 068001 (in Chinese) [钱利波, 朱樟明, 杨银堂 2012 61 068001]
[26]	Savidis I, Alamc S M, Jain A, Pozder S, Jones R E, Chatterjee R 2010 Microelectron. J. 41 9
[27]	Zhu Z M, Zuo P, Yang Y T 2011 Acta Phys. Sin. 60 118001 (in Chinese) [朱樟明, 左平, 杨银堂 2011 60 118001]
[28]	Kim J, Cho J, Kim J, Yook J M, Kim J C, Lee J, Park K, Pak J S 2014 IEEE Trans. Compon. Packag. Manuf. Technol. 4 697
[29]	Greakis V, Avdikou C, Liolios A, Hatzopoulos A 2014 International Symposium on Design and Diagnostics of Electronic Circuits & Systems Warsaw, Poland, April 23-25, 2014 p310

施引文献

[1]	Lee Y J, Lim S K 2011 IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 30 1635
[2]	Zhao X, Minz J, Lim S K 2011 IEEE Trans. Compon. Packag. Manuf. Technol. 1 247
[3]	Zhu Z M, Wan D J, Yang Y T 2010 Acta Phys. Sin. 59 4837 (in Chinese) [朱樟明, 万达经, 杨银堂 2010 59 4837]
[4]	Khan N H, Alam S M, Hassoun S 2011 IEEE Trans. Very Large Scale Integr. Syst. (VLSI) 19 647
[5]	Liu W, Du H, Wang Y, Ma Y, Xie Y, Quan J, Yang H 2013 International Symposium on Quality Electronic Design Santa Clara, USA, March 4-6, 2013 p300
[6]	Wei S H, Lee Y M, Ho C T, Sun C T, Cheng L C 2013 International Symposium on VLSI Design, Automation and Test Hsinchu, China, April 22-24, 2013 p1
[7]	Kim J, Cho J, Pak J S, Song T 2010 International Conference on Electrical Performance of Electronic Packaging and Systems Austin, USA, October 25-27, 2010 p41
[8]	Zhao X, Lim S K 2010 Asia and South Pacific Design Automation Conference Taipei, China, January 18-21, 2010 p175
[9]	Sai M P D, Shang Y H, Tan C S, Lim S K 2013 IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 32 1734
[10]	Qian L B, Zhu Z M, Xia Y S, Ding R X, Yang Y T 2014 Chin. Phys. B 23 038402
[11]	Chen H T, Lin H L, Wang Z C, Hwang T T 2011 DATE Conference and Exhibition Grenoble, France, March 14-18, 2011 p1
[12]	Yang P, Chen H T, Hwang T T 2013 Asia and South Pacific Design Automation Conference Yokohama, Japan, January 22-25, 2013 p699
[13]	Zhao W S, Wang X P, Xu X L, Yin W Y 2010 Proc. IEEE Electrical Design of Advanced Packaging & Systems Symposium Singapore, December 7-9, 2010 p1
[14]	Chua T T, Ho S W, Li H Y, Khong C H, Liao E B, Chew S P, Lee W S, Lim L S, Pang X F, Kriangsak S L, Ng C, Nathapong S, Toh C H 2010 International Symposium on Quality Electronic Design Las Vegas, USA, June 1-4, 2010 p798
[15]	Han K J, Swaminathan M, Bandyopadhyay T 2010 IEEE Trans. Adv. Package 33 804
[16]	Todri A, Kundu S, Girard P, Bosio A, Dilillo L 2013 IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 21 306
[17]	Savidis I, Friedman E G 2009 IEEE Trans. Electron Dev. 56 1873
[18]	Kim J, Pak J S, Cho J, Song E 2011 IEEE Trans. Compon. Packag. Manuf. Technol. 1 181
[19]	Hall S H, Hall G W, McCall J A 2000 High-Speed Digital System Design: A Handbook of Interconnect Theory and Design Practices (New York: John Wiley & Sons) p205
[20]	Liu E X, Li E P, Ewe W B, Lee H M 2011 IEEE Trans. Microw. Theory Tech. 59 1454
[21]	Katti G, Stucchi M, Meyer K D, Dehaene W 2010 IEEE Trans. Electron Dev. 57 256
[22]	Kim D Y, Kim J H, Pak J S, Lee H D, Lee J H, Park K W, Kim J H 2012 IEEE Electronic Components and Technology Conference California, USA, May 29-30, 2012 p1945
[23]	Elmiligi H, El-Kharashi M W, Gebali F 2013 Microprocess. Microsy. 37 530
[24]	Dong G, Yang Y, Chai C C, Yang Y T 2010 Chin. Phys. B 19 110202
[25]	Qian L B, Zhu Z M, Yang Y T 2012 Acta Phys. Sin. 61 068001 (in Chinese) [钱利波, 朱樟明, 杨银堂 2012 61 068001]
[26]	Savidis I, Alamc S M, Jain A, Pozder S, Jones R E, Chatterjee R 2010 Microelectron. J. 41 9
[27]	Zhu Z M, Zuo P, Yang Y T 2011 Acta Phys. Sin. 60 118001 (in Chinese) [朱樟明, 左平, 杨银堂 2011 60 118001]
[28]	Kim J, Cho J, Kim J, Yook J M, Kim J C, Lee J, Park K, Pak J S 2014 IEEE Trans. Compon. Packag. Manuf. Technol. 4 697
[29]	Greakis V, Avdikou C, Liolios A, Hatzopoulos A 2014 International Symposium on Design and Diagnostics of Electronic Circuits & Systems Warsaw, Poland, April 23-25, 2014 p310

[1]	张沐安, 王进卿, 吴睿, 冯致, 詹明秀, 徐旭, 池作和. 多孔介质内气泡Ostwald熟化特性三维孔网数值模拟. , 2023, 72(16): 164701. doi: 10.7498/aps.72.20230695
[2]	赵天择, 杨苏辉, 李坤, 高彦泽, 王欣, 张金英, 李卓, 赵一鸣, 刘宇哲. 频域反射法光纤延时精密测量. , 2021, 70(8): 084204. doi: 10.7498/aps.70.20201075
[3]	张宁, 徐开凯, 陈彦旭, 朱坤峰, 赵建明, 于奇. 金属-氧化物-半导体硅发光器件在集成电路中的应用前景. , 2019, 68(16): 167803. doi: 10.7498/aps.68.20191004
[4]	林书庆, 江宁, 王超, 胡少华, 李桂兰, 薛琛鹏, 刘雨倩, 邱昆. 基于动态混沌映射的三维加密正交频分复用无源光网络. , 2018, 67(2): 028401. doi: 10.7498/aps.67.20171246
[5]	危波, 蔡理, 杨晓阔, 李成. 基于多铁纳磁体的择多逻辑门三维磁化动态特性研究. , 2017, 66(21): 217501. doi: 10.7498/aps.66.217501
[6]	肖廷辉, 于洋, 李志远. 石墨烯-硅基混合光子集成电路. , 2017, 66(21): 217802. doi: 10.7498/aps.66.217802
[7]	董刚, 刘荡, 石涛, 杨银堂. 多个硅通孔引起的热应力对迁移率和阻止区的影响. , 2015, 64(17): 176601. doi: 10.7498/aps.64.176601
[8]	曾超, 高洪跃, 刘吉成, 于瀛洁, 姚秋香, 刘攀, 郑华东, 曾震湘. 动态全息三维显示研究最新进展. , 2015, 64(12): 124215. doi: 10.7498/aps.64.124215
[9]	钱利波, 朱樟明, 杨银堂. 一种考虑硅通孔电阻-电容效应的三维互连线模型. , 2012, 61(6): 068001. doi: 10.7498/aps.61.068001
[10]	白岩, 赵卫疆, 任德明, 曲彦臣, 刘闯, 袁晋鹤, 钱黎明, 陈振雷. 基于有源Fabry-Perot腔的激光脉冲延时自外差研究. , 2012, 61(9): 094218. doi: 10.7498/aps.61.094218
[11]	朱樟明, 左平, 杨银堂. 考虑硅通孔的三维集成电路热传输解析模型. , 2011, 60(11): 118001. doi: 10.7498/aps.60.118001
[12]	张金松, 吴懿平, 王永国, 陶媛. 集成电路微互连结构中的热迁移. , 2010, 59(6): 4395-4402. doi: 10.7498/aps.59.4395
[13]	朱樟明, 郝报田, 李儒, 杨银堂. 一种基于延时和带宽约束的纳米级互连线优化模型. , 2010, 59(3): 1997-2003. doi: 10.7498/aps.59.1997
[14]	朱樟明, 钟波, 杨银堂. 基于RLCπ型等效模型的互连网络精确焦耳热功耗计算. , 2010, 59(7): 4895-4900. doi: 10.7498/aps.59.4895
[15]	李江城, 梅冬成. 集合种群的延时效应. , 2008, 57(11): 6792-6798. doi: 10.7498/aps.57.6792
[16]	韩立波. 延时对色关联噪声诱导的逻辑生长过程的影响. , 2008, 57(5): 2699-2703. doi: 10.7498/aps.57.2699
[17]	仪桂云, 董　鹏, 王晓冬, 刘丽霞, 陈胜利. 三维有序大孔聚苯乙烯的制备及表征. , 2004, 53(10): 3311-3315. doi: 10.7498/aps.53.3311
[18]	邵元智, 钟伟荣, 林光明. 三维X-Y模型的滞后标度和动态相变行为. , 2003, 52(9): 2309-2313. doi: 10.7498/aps.52.2309
[19]	邵元智, 蓝图, 林光明. 三维动态Ising模型中的非平衡相变:三临界点的存在. , 2001, 50(5): 942-947. doi: 10.7498/aps.50.942
[20]	邢修三. 延时断裂统计理论. , 1990, 39(10): 1602-1613. doi: 10.7498/aps.39.1602

计量

文章访问数: 6736
PDF下载量: 447
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板