Lu3+掺杂对CdO陶瓷电、热输运性能的影响

董国义; 李龙江; 吕青; 王淑芳; 戴守愚; 王江龙; 傅光生

doi:10.7498/aps.63.178102

摘要

利用传统固相烧结法制备了Cd1-xLux O （x=0%，0.1%，0.5%，0.75%，1.0%，1.25%，1.5%，2%）陶瓷样品并研究了Lu3+掺杂对其电、热输运性能的影响. 随着Lu3 +掺杂浓度的增大，Cd1-xLux O样品的室温载流子浓度持续增大而其迁移率表现出先增大后减小的趋势. 在3001000 K测试温度区间内，Cd1-xLux O的电导率表现出金属电导行为且其电导率和热导率均随着Lu3+掺杂浓度的增大而升高；塞贝克系数在整个测试区间内均为负值，其随温度和载流子浓度的变化关系可用自由电子模型描述.

关键词:

Abstract

Cd1-xLuxO(x=0%, 0.1%, 0.5%, 0.75%, 1.0%, 1.25%, 1.5%, 2%) ceramics have been synthesized by the traditional solid phase sintering method; and the effects of Lu3+-doping on the electric and thermal transport properties of these samples are investigated. With the increase of Lu3+-doping concentration, the room temperature carrier concentration in Cd1-xLuxO increases while the mobility first increases and then decreases. In the measuring temperature range of 300 to 1000 K, the electric conductivity of Cd1-xLuxO exhibites a metallic conducting behavior, and both their electric conductivity and thermal conductivity increase with the Lu3+-doping concentration. The Seebeck coefficient S of Cd1-xLuxO is negative in the whole measuring temperature range, and the dependence of S on the carrier concentration can be describedby a free electron model.

Keywords:

CdO /
electric and thermal transport properties /
semiconductor doping

作者及机构信息

1.
河北省光电信息材料重点实验室, 河北大学物理科学与技术学院, 保定 071002

基金项目: 国家自然科学基金（批准号：51372064）﹑河北省杰出青年科学基金（批准号：2013201249）和河北自然科学基金（批准号：A2014201176）资助的课题.

Authors and contacts

1.
Hebei Key Laboratory of Optoelectronic Information Materials, the College of Physical Science and Technology, Hebei University, Baoding 071002, China

Funds: Project supported by the National Natural Science Foundation of China(Grant No. 51372064), the National Science Fund for Distinguished Young Scholars of Hebei Province (Grant No. 2013201249), and the Natural Science Foundation of Hebei Province (Grant No. A2014201176).

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施引文献

[1]	Ambrosini A, Palmer G B, Maignan A, Poeppelmeier K R 2002 Chem. Mater. 14 52
[2]
[3]	Badeker K 1907 Ann. Phys. 22 749
[4]	Bel Hadj Tahar R, Ban T, Ohya Y, Takahashi Y 1998 J. Appl. Phys. 83 2631
[5]
[6]
[7]	Yan M, Lane M, Kannewurf C R, Changa R P H 2001 Appl. Phys. Lett. 78 2342
[8]	Muhammad R, Fayyaz H, Muhammad I, Ahmad S A, Noor N A 2014 Chin. Phys. B 23 017304
[9]
[10]	Wang S F, L Q, Li L J, Fu G S, Liu F Q, Dai S Y, Yu W, Wang J L 2013 Scripta Mater. 69 533
[11]
[12]	Wang S F, Liu F Q, L Q, Dai S Y, Wang J L, Yu W, Fu G S 2013 J. Eur. Ceram. Soc. 33 1763
[13]
[14]
[15]	Ohta H 2007 Mater. Today 10 15
[16]	Zhang L H, Tosho T, Okinaka N, Akiyama T 2007 Mater. Trans. JIM 5 1079
[17]
[18]
[19]	Wang N, Li H W, Ba Y S, Wang Y F, Wan C L, Fujinami K, Koumoto K 2010 J. Electron. Mater. 39 1777
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[23]
[24]	Yan M, Lane M, Kannewurf C R, Chang R P H 2001 Appl. Phys. Lett. 78 2342
[25]
[26]
[27]	Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F T, Dout D R, Brillson L J 2011 Phys. Rev. B 84 115202
[28]
[29]	Liu Y, Lin Y H, Xu W, Cheng B, Lan J L, Chen D L 2012 J. Am. Ceram. 95 2568
[30]
[31]	Jung K H, Lee K H, Seo W S, Choi S M 2012 Appl. Phys. Lett. 100 253902
[32]
[33]	Tsujii N, Mori T 2013 Appl. Phys. Exp. 6 043001
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[35]
[36]
[37]	Tsubota T, Ohtaki M, Eguchi K, Arai H 1997 J. Mater. Chem. 7 85
[38]	Jood P, Mehta R J, Zhang Y L, Peleckis G, Wang X L, Siegel R W 2011 Nano. Lett. 11 4337
[39]

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