Ge掺杂n型Sn基Ⅷ型单晶笼合物的制备及热电传输特性

孟代仪; 申兰先; 晒旭霞; 董国俊; 邓书康

doi:10.7498/aps.62.247401

摘要

采用Sn自熔剂法制备了具有n型传导的Ⅷ型Ba8Ga16-xGexSn30 （0 ≤ x ≤ 1.0）单晶笼合物，并对其结构和热电特性进行研究. 研究结果表明：Ge在单晶中的实际含量较少，随着掺杂量的增加样品的晶格常数略有减小，Ge掺杂后样品的载流子浓度较掺杂前低，迁移率增加；所有样品的Seebeck系数均为负值，且绝对值较未掺杂样品低，但Ge掺杂后样品的电导率提高了62%；x=0.5的样品在500 K附近取得最大ZT值1.25.

关键词:

Abstract

Single crystalline samples of type-Ⅷ Ba8Ga16-xGexSn30 (0 ≤ x ≤ 1.0) clathrates are fabricated by the Sn flux method. The structures and thermoelectric properties of the samples at temperatures ranging from 300 to 600 K are studied. Research results show that the actual content of Ge is relatively small in single crystal. The lattice parameters of the samples decrease slightly with the increase of the doping composition of Ge. The Ge doped samples have lower carrier density and higher carrier mobility than undoped samples. The Seebeck coefficients of all the doped samples are negative, and their absolute values are smaller than those of the undoped one. However, the electrical conductivity of the sample is increased by 62% after doping Ge and the sample of x=0.5 obtains a maximum value of ZT (1.25) at about 500 K.

Keywords:

作者及机构信息

1.
云南师范大学, 太阳能研究所, 可再生能源材料先进技术与制备教育部重点实验室, 昆明 650092

基金项目: 国家自然科学基金（批准号：51262032）资助的课题.

Authors and contacts

1.
Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education, Solar Energy Research Institution, Yunnan Normal University, Kunming 650092, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51262032).

参考文献

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[5]	Zhai P C, Zhao W Y, Li Y, Liu L S, Tang X F, Zhang Q J, Niino M 2006 Appl. Phys. Lett. 89 052111
[6]	Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109
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[17]	Deng S K 2008 Ph. D. Dissertation (Hubei: Wuhan University of Technology) (in Chinese) [邓书康 2008 博士学位论文(湖北: 武汉理工大学)]
[18]	Sales B C, Mandrus D, Williams R K 1996 Science 272 1325
[19]	Nolas G S, Cohn J L, Slack G A, Schjuman S B 1998 Appl. Phys. Lett. 73 178
[20]	Kono Y, Ohya N, Taguchi T, Suekuni K, Takabatake T, Yamamoto S, Akai K 2010 J. Appl. Phys. 107 123720
[21]	Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N, Takabatake T 2010 J. Alloy. Compd. 507 1
[22]	Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704
[23]	Kishimoto K, Yamamoto H, Akai K, Koyanagi T 2012 J. Appl. Phys. 45 445306
[24]	Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302
[25]	Xiong C, Deng S K, Tang X F, Qi Q, Zhang Q J 2008 Acta Phys. Sin. 57 1190 [熊聪, 邓书康, 唐新峰, 祁琼, 张清杰 2008 57 1190]
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施引文献

[1]	Slack G A 1995 CRC Handbook of Thermoelectrics CRC
[2]	Li H, Tang X F, Zhao W Y, Zhang Q J 2006 Acta Phys. Sin. 55 6506 (in Chinese) [李涵, 唐新峰, 赵文俞, 张清杰 2006 55 6506]
[3]	Zhao W Y, Wei P, Zhang Q J, Dong C L, Liu L S, Tang X F 2009 J. Am. Chem. Soc. 131 3713
[4]	Zhao W Y, Dong C L, Wei P, Guan W, Liu L S, Zhai P C, Tang X F, Zhang Q J 2007 Appl. Phys. Lett. 102 113708
[5]	Zhai P C, Zhao W Y, Li Y, Liu L S, Tang X F, Zhang Q J, Niino M 2006 Appl. Phys. Lett. 89 052111
[6]	Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109
[7]	Suekuni K, Avila M A, Umeo K, Fukuoka H, Yamanaka S, Nakagawa T, Takabatake T 2008 Phys. Rev. B 77 235119
[8]	Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113
[9]	Bentien A, Pacheco V, Paschen S, Grin Y, Steglich F 2005 Phys. Rev. B 71 165206
[10]	Phan M H, Woods G T, Chaturvedi A, Stefanoski S, Nolas G S, Srikant H 2008 Appl. Phys. Lett. 93 252505
[11]	Pacheco V, Bentien A, Carrillo-Cabrera W, Paschen S, Steglich F, Grin Y 2005 Phys. Rev. B 71 165205
[12]	Sasaki Y, Kishimoto K, Koyanagi T, Asada H, Akai K 2009 Appl. Phys. Lett. 105 073702
[13]	Kishimoto K, Ikeda N, Akai K, Koyanagi T 2008 Appl. Phys. Express 1 031201
[14]	Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113
[15]	Xiong C, Tang X F, Qi Q, Deng S K, Zhang Q J 2006 Acta Phys. Sin. 55 6630 (in Chinese) [熊聪, 唐新峰, 祁琼, 邓书康, 张清杰 2006 55 6630]
[16]	Huo D, Sakata T, Sasakawa T, Avila M A, Tsuboat M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113
[17]	Deng S K 2008 Ph. D. Dissertation (Hubei: Wuhan University of Technology) (in Chinese) [邓书康 2008 博士学位论文(湖北: 武汉理工大学)]
[18]	Sales B C, Mandrus D, Williams R K 1996 Science 272 1325
[19]	Nolas G S, Cohn J L, Slack G A, Schjuman S B 1998 Appl. Phys. Lett. 73 178
[20]	Kono Y, Ohya N, Taguchi T, Suekuni K, Takabatake T, Yamamoto S, Akai K 2010 J. Appl. Phys. 107 123720
[21]	Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N, Takabatake T 2010 J. Alloy. Compd. 507 1
[22]	Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704
[23]	Kishimoto K, Yamamoto H, Akai K, Koyanagi T 2012 J. Appl. Phys. 45 445306
[24]	Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302
[25]	Xiong C, Deng S K, Tang X F, Qi Q, Zhang Q J 2008 Acta Phys. Sin. 57 1190 [熊聪, 邓书康, 唐新峰, 祁琼, 张清杰 2008 57 1190]
[26]	Caillt T, Borahchevsky A, Fleurial J P 1997 Mater. Res. Soc. Symp. Proc. 478 103

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