基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真

容佳玲; 陈赟汉; 周洁; 张雪; 王立; 曹进

doi:10.7498/aps.62.228502

摘要

探索了ITO/PMMA/Al器件的阻变机理及其SPICE电路仿真, 通过优化聚甲基丙烯酸甲酯(PMMA)层退火温度, 器件可实现连续擦-读-写-读操作. 基于不同退火温度PMMA薄膜的表面形貌研究, 构建了单层有机阻变器件的非线性电荷漂移模型, 以及描述该模型掺杂区界面移动的状态方程, 并通过反馈控制积分器建立了SPICE仿真电路. 最后, 代入器件实际测量参数, 得到与器件实际结果基本一致的电流-电压模拟曲线. 结果验证了单层有机器件的阻变机理, 说明该非线性电荷漂移模型的SPICE仿真在有机阻变器件仿真中同样适用.

关键词:

Abstract

In this paper the resistive mechanism of the device with structure of ITO/PMMA/Al and the relevant SPICE simulation circuit are investigated. By optimizing the annealing temperature of PMMA, the devices can achieve continuous erasable-readable-writeable-readable operation. Based on the surface morphology researches of PMMA with different annealing temperatures, a physics model of nonlinear charge-drift mechanism in doping system is established to explain the resistance characteristics of the organic device. And the state equations are established to describe the interface movement of different doping regions in the model. Then, the SPICE simulation circuit is set up with feedback control integrator. Finally, substituting the measured parameters of device into the simulation circuit, we obtain the current-voltage simulation curve which is in good agreement with the actual results of the device. The results verify the resistance mechanism of nonlinear charge-drift in our device, and the applicability of the SPICE simulation of nonlinear charge-drift model based on inorganic memristors to the organic resistive memory.

Keywords:

作者及机构信息

1.
上海大学材料科学与工程学院, 上海 200072;

2.
上海大学, 新型显示技术及应用集成教育部重点实验室, 上海 200072

基金项目: 上海自然科学基金(批准号: 09ZR1411900)、上海市科委(批准号: 11100703200)和上海大学创新基金(批准号: sdcx2012063)资助的课题.

Authors and contacts

1.
Shanghai University School of Materials Science and Engineering, Shanghai 200072, China;

2.
Key Laborary of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, China

Funds: Project supported by the Shanghai Natural Science Funds, China (Grant No. 09ZR1411900), the Shanghai Science and Technology Commission Project, China (Grant No. 11100703200), and the Shanghai University Innovation Funds, China (Grant No. sdcx2012063).

参考文献

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[22]	Song Y, Tan Y P, Teo E Y H, Zhu C X, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508
[23]	Wang M L, Zhou J, Gao X D, Ding B F, Shi Z, Sun X Y, Ding X M, Hou X Y 2007 Appl. Phys. Lett. 91 143511
[24]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[25]	Zdenek B, Biolek D, Biolková V 2009 Radioengineering 18 210
[26]	Chua L O 2011 Appl. Phys. A: Mater. Sci. Process 102 765
[27]	Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137701 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137701]
[28]	Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 60 120502]
[29]	Liang Y, Yu D S, Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese) [梁燕, 于东升, 陈昊 2013 62 158501]
[30]	Bao B C, Xu J P, Zhou G H, Ma Z H, Zou L 2011 Chin. Phys. B 20 120502

施引文献

[1]	Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2011 Acta Phys. Sin. 61 120502 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[2]	Liu S, Li Y T, Wang Y, Long S B, L H B, Liu Q, Wang Q, Zhang S, Lian W T, Liu M 2011 Chin. Phys. B 20 017305
[3]	Zhang T, Bai Y, Jia C H, Zhang W F 2012 Chin. Phys. B 21 107304
[4]	Hu H, Cai J M, Zhang C D, Gao M, Pan Y, Du S X, Sun Q F, Gao H J, Xie X C, Niu Q 2010 Chin. Phys. B 19 037202
[5]	Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[6]	Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[7]	Mahapatro A K, Agrawal R, Ghosh S 2004 J. Appl. Phys. 96 3583
[8]	Majumdar H S, Baral J K, Österbacka R, Ikkalab O, Stubba H 2005 Org. Electron. 6 188
[9]	Ma L P, Liu J, Yang Y 2002 Appl. Phys. Lett. 80 2997
[10]	Möller S, Perlov C, Jackson W, Taussig C, Forrest S R 2003 Nature 426 166
[11]	Ji Y, Cho B, Song S, Kim T W, Choe M, Kahng Y H, Lee T 2010 Adv. Mater. 22 3071
[12]	Joo W J, Choi T L, Lee K H, Chung Y S 2007 J. Phys. Chem. B 111 7756
[13]	Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[14]	Reddy V S, Karak S, Ray S K, Dhar A 2009 Org. Electron. 10 138
[15]	Baral J K, Majumdar H S, Laiho A, Jiang H, Kauppinen E I, Ras R H A, Ruokolainen J, Ikkala O, Öesterbacka R 2008 Nanotechnology 19 035203
[16]	Carbone A, Kotowska B K, Kotowski D 2005 Phys. Rev. Lett. 95 236601
[17]	Mark P, Helfrich W 1962 J. Appl. Phys. 33 205
[18]	Lin H T, Pei Z, Chan Y J 2007 IEEE Electron. Dev. Lett. 28 569
[19]	Ling Q D, Song Y, Ding S J, Zhu C X, Chan D S H, Kwong D L, Kang E T, Neoh K G 2005 Adv. Mater. 17 455
[20]	Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S H, Kang E T, Neoh K G 2007 Langmuir 23 312
[21]	Song Y, Ling Q D, Zhu C, Kang E T, Chan D S H, Wang Y H, Kwong D L 2006 IEEE Electron. Dev. Lett. 27 154
[22]	Song Y, Tan Y P, Teo E Y H, Zhu C X, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508
[23]	Wang M L, Zhou J, Gao X D, Ding B F, Shi Z, Sun X Y, Ding X M, Hou X Y 2007 Appl. Phys. Lett. 91 143511
[24]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[25]	Zdenek B, Biolek D, Biolková V 2009 Radioengineering 18 210
[26]	Chua L O 2011 Appl. Phys. A: Mater. Sci. Process 102 765
[27]	Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137701 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137701]
[28]	Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 60 120502]
[29]	Liang Y, Yu D S, Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese) [梁燕, 于东升, 陈昊 2013 62 158501]
[30]	Bao B C, Xu J P, Zhou G H, Ma Z H, Zou L 2011 Chin. Phys. B 20 120502

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