条形畴结构的FeCoAlON薄膜磁性的研究

王锐; 郑富; 罗飞龙; 娄元付; 王颖; 曹江伟; 白建民; 魏福林; 阿谢卡姆津

doi:10.7498/aps.62.217503

摘要

用磁控射频溅射法制备了FeCoAlON薄膜, 研究了Al-O和N元素的添加对FeCo合金薄膜的软磁性的影响. 研究结果表明: 随着Al, O, N元素添加量的增加, 薄膜微结构从多晶转化到纳米晶再转化到非晶态, 薄膜表现为软磁性; 在N的含量较高时, 薄膜呈现条形畴结构, 本文对条形畴结构出现的机理和条件作了详细讨论, 并发现具有条形畴结构的薄膜的磁导率频率特性具有多峰共振的特点.

关键词:

铁钴基合金 /
薄膜 /
条形畴

The FeCoAlON thin films were prepared by magnetron sputtering. Effect of element addition of Al, O, and N on magnetic materials was studied. Experiment demonstrated that with increasing Al, O and N, the film structure changed from polycrystalline to amorphous, and the films showed soft magnetism. When N content in the film is high, the films show stripe domain structure. The condition and mechanism for the occurrence of stripe domain structure were discussed in detail, and we found that the frequency response of permeability of the films show characteristics of multi-peak resonance.

Keywords:

作者及机构信息

1.
兰州大学磁学与磁性材料教育部重点实验室, 磁性材料研究所, 兰州 730000;

2.
俄罗斯科学院约飞物理-技术研究所, 圣彼德堡 194021

基金项目: 国家自然科学基金(批准号: 51171086, 61272076)资助的课题.

Authors and contacts

1.
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education Research Institute of Magnetic Materials, Lanzhou University, Lanzhou 730000, China;

2.
Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021, Russian Federation

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51171086, 61272076).

参考文献

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[8]	Chikazumi S 1978 Physics of Magnetism ([M] Boca Raton, FL: Krieger)
[9]	Wang X, Zheng F, Lu J, Bai J M, Wang Y, Wei F L 2011 Acta Phys. Sin. 60 017505 (in Chinese) [王璇, 郑富, 芦佳, 白建民, 王颖, 魏福林 2011 60 017505]
[10]	Ding Y F, Byeon S C, Alexander C 2001 IEEE Trans Magn. 37 1776
[11]	Prosen R J, Holmen J O, Gran B E 1961 Appl. Phys. Lett. 32 92S
[12]	Shimada Y, Shimoda M, Kitakami O 1995 Jpn. J. Appl. Phys. 34 4786
[13]	Hehn M, Padovani S, Ounadjela K, Bucher J P 1996 Phys. Rev. B 54 3428
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施引文献

[1]	Soohoo R F 1979 IEEE Trans Magn. 15 1830
[2]	Kim C S, Bea S, Kim H J, Nam S E, Kim H J 2001 IEEE Trans Magn. 37 2894
[3]	Kim K H, Kim J Y, Kim H J, Suk H H, Kim H J 2002 IEEE Trans Magn. 38 3162
[4]	Zhang L R, LV H, Liu X, Bai J M, Wei F L 2012 Chin. Phys. B 21 037502
[5]	Bozorth R M 1998 Ferromagnetism (Vol.148) (New York: Wiley-IEEE Press)
[6]	Wang S X, Sun N X, Yamaguchi M, Yabukami S 2000 Nature (London) 40 7150
[7]	Löffler J F, Braun H B, Wagner W, Kostorz G, Wiedenmann A 2001 Materials Science and Engineering A 304 1050
[8]	Chikazumi S 1978 Physics of Magnetism ([M] Boca Raton, FL: Krieger)
[9]	Wang X, Zheng F, Lu J, Bai J M, Wang Y, Wei F L 2011 Acta Phys. Sin. 60 017505 (in Chinese) [王璇, 郑富, 芦佳, 白建民, 王颖, 魏福林 2011 60 017505]
[10]	Ding Y F, Byeon S C, Alexander C 2001 IEEE Trans Magn. 37 1776
[11]	Prosen R J, Holmen J O, Gran B E 1961 Appl. Phys. Lett. 32 92S
[12]	Shimada Y, Shimoda M, Kitakami O 1995 Jpn. J. Appl. Phys. 34 4786
[13]	Hehn M, Padovani S, Ounadjela K, Bucher J P 1996 Phys. Rev. B 54 3428
[14]	Viala B, Minor M K, Barnard J A 1996 J. Appl. Phys. 80 3941
[15]	Murayama Y 1966 J. Phys. Soc. Japan. 21 2253
[16]	Abanov A, Kalatsky V, Pokrovsky V L, Saslow W M 1995 Phys. Rev. B 51 1023
[17]	Samson Y, Marty A, Hoffmann R, Gehanno V, Gilles B 1999 J. Appl. Phys. 85 4604
[18]	Marty A, Samson Y, Gilles B, Belakhovsky M, Dudzik E, Drr H, Dhesi S S, Van der Laan G, Goedkoop J B 2000 J. Appl. Phys. 87 5472
[19]	Zou P, Yu W, James A B 2002 IEEE Trans. Magn. 38 3501
[20]	Yafer Y, Gyorgy E M 1988 Phys. Rev. B 38 9145
[21]	Wu Y Z, Won C, Scholl A, Doran A, Zhao H W, Jin X F, Qiu Z Q 2004 Phys. Rev. Lett. 93 117205
[22]	Cates J C, Alexander C 1994 J. Appl. Phys. 75 6754
[23]	Acher O, Boscher C, Brulé B, Perrin G, Vukadinovic N, Suran G, Joister H 1997 J. Appl. Phys. 81 4057
[24]	Vukadinovic N, Youssef J B, Gall H L 1995 J. Magn. Magn Mater. 150 213

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