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采用数学模拟方法分析了不同背接触势垒高度(φb) 对于CdS/CdTe薄膜电池的J-V(电流密度-电压)方程的影响, 得出了势垒高度与roll-over的变化对应关系. 采用相应Cu/Mo背电极的CdS/CdTe薄膜电池在220-300 K的变温J-V曲线的数值分析与理论分析相对照, 分析了背势垒对于J-V曲线拟合参数的影响. 修正了φb 与反向饱和电流(Jb0)关系式, 理论与实验符合得非常好.
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关键词:
- CdS/CdTe薄膜 /
- 伏安特性 /
- 肖特基势垒 /
- roll-over
Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (φb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (φb) and the reverse saturation current density (Jb0) is revised and the experimental data are consistent with the simulation results very well.-
Keywords:
- CdS/CdTe thin film solar cell /
- current-votage characteristics /
- Schottky barrier /
- roll-over
[1] Chu T, Chu S 1993 Res. Appl. 1 31
[2] Romeo N, Bosio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201
[3] Khrypunov G, Romeo A, Kurdesau F, Batzner D L, Zogg H, Tivari A N 2006 Sol. Energy Mater. Sol. Cells 90 664
[4] Asher S E, Hasoon F S, Gessert T A, Young M R, Sheldon P, Hiltner J, Sites J 2000 Photovoltaic Specialists Conference, Conference Record of the 28th IEEE PVSC Anchorage, AK, September 15-22, 2000 p479
[5] Pudov A O, Gloeckler M, Demtsu S H, Sites J R, Barth K L, Enzenroth R A, Sampath W S 2002 Photovoltaic Specialists Conference Conference Record of the 29th IEEE PVSC May 19-24, 2002 p760
[6] Ba Ètzner D L, Wendt R, Romeo A, Zogg H, Tiwari A N 2000 Thin Solid Films 361 463
[7] Arlund J, Ritala M, Leskelä M, Siponmaa E, Zilliacus R 1996 Sol. Energy Mater. Sol. Cells 44 177
[8] Bätznera D L, Romeoa A, Zogga H, Wendt R, Tiwari A N 2001 Thin Solid Films 387 151
[9] Bonnet D 2000 Thin Solid Films 361 547
[10] Kevin D D, Iris V F, Gary H, David C 2000 Sol. Energy Mater. Sol. Cells 62 295
[11] Janik E, Triboulet R 1983 J. Phys. D: Appl. Phys. 16 2333
[12] Hiltner J F, Sites J R 1998 Proceedings of the 15th NCPV Photovoltaics Program Review Meeting American Institute of Physics Conference Proceedings, Woodbury, New York, September 8-11 p170
[13] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (1st Ed.) (Xi’an: Xi’an Jiaotong University Press) p186 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1998半导体物理学(第一版) (西安: 西安交通大学出版社)第186页]
[14] Sze S M 2007 Physics of Semiconductor Devices (3rd Ed.) (New Jersey: John Wily & Sons) p134
[15] Sites J R 2003 Sol. Energy Mater. Sol. Cells 75 243
[16] Gloeckler M, Fahrenbruch A L, Site J R 2003 in Proc. 3rd World Conf. Photovoltaic Energy Conversion Osaka, Japan, May 18-18, 2003 p491
[17] Wu X Z, Dhere R G, Albin D S, Gessert T A, DeHart C, Keane J C, Duda A, Coutts T J, Asher S, Levi D H, Moutinho H R, Yan Y, Moriarty T, Johnston S, Emery K, Sheldon P 2001 The NCPV Program Review Meeting Lakewood Colorado, US, October 14-17, 2001 p14
[18] Ba Ètzner D L, Èszanb M E, Bonnet D, Bucher K 2000 Thin Solid Films 361 288
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[1] Chu T, Chu S 1993 Res. Appl. 1 31
[2] Romeo N, Bosio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201
[3] Khrypunov G, Romeo A, Kurdesau F, Batzner D L, Zogg H, Tivari A N 2006 Sol. Energy Mater. Sol. Cells 90 664
[4] Asher S E, Hasoon F S, Gessert T A, Young M R, Sheldon P, Hiltner J, Sites J 2000 Photovoltaic Specialists Conference, Conference Record of the 28th IEEE PVSC Anchorage, AK, September 15-22, 2000 p479
[5] Pudov A O, Gloeckler M, Demtsu S H, Sites J R, Barth K L, Enzenroth R A, Sampath W S 2002 Photovoltaic Specialists Conference Conference Record of the 29th IEEE PVSC May 19-24, 2002 p760
[6] Ba Ètzner D L, Wendt R, Romeo A, Zogg H, Tiwari A N 2000 Thin Solid Films 361 463
[7] Arlund J, Ritala M, Leskelä M, Siponmaa E, Zilliacus R 1996 Sol. Energy Mater. Sol. Cells 44 177
[8] Bätznera D L, Romeoa A, Zogga H, Wendt R, Tiwari A N 2001 Thin Solid Films 387 151
[9] Bonnet D 2000 Thin Solid Films 361 547
[10] Kevin D D, Iris V F, Gary H, David C 2000 Sol. Energy Mater. Sol. Cells 62 295
[11] Janik E, Triboulet R 1983 J. Phys. D: Appl. Phys. 16 2333
[12] Hiltner J F, Sites J R 1998 Proceedings of the 15th NCPV Photovoltaics Program Review Meeting American Institute of Physics Conference Proceedings, Woodbury, New York, September 8-11 p170
[13] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (1st Ed.) (Xi’an: Xi’an Jiaotong University Press) p186 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1998半导体物理学(第一版) (西安: 西安交通大学出版社)第186页]
[14] Sze S M 2007 Physics of Semiconductor Devices (3rd Ed.) (New Jersey: John Wily & Sons) p134
[15] Sites J R 2003 Sol. Energy Mater. Sol. Cells 75 243
[16] Gloeckler M, Fahrenbruch A L, Site J R 2003 in Proc. 3rd World Conf. Photovoltaic Energy Conversion Osaka, Japan, May 18-18, 2003 p491
[17] Wu X Z, Dhere R G, Albin D S, Gessert T A, DeHart C, Keane J C, Duda A, Coutts T J, Asher S, Levi D H, Moutinho H R, Yan Y, Moriarty T, Johnston S, Emery K, Sheldon P 2001 The NCPV Program Review Meeting Lakewood Colorado, US, October 14-17, 2001 p14
[18] Ba Ètzner D L, Èszanb M E, Bonnet D, Bucher K 2000 Thin Solid Films 361 288
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