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由于台阶的出现, 应变SiGe p型金属氧化物半导体场效应管 (pMOSFET) 的栅电容特性与体Si器件的相比呈现出很大的不同, 且受沟道掺杂的影响严重. 本文在研究应变SiGe pMOSFET器件的工作机理及其栅电容C-V 特性中台阶形成机理的基础上, 通过求解器件不同工作状态下的电荷分布, 建立了应变SiGe pMOSFET栅电容模型, 探讨了沟道掺杂浓度对台阶的影响. 与实验数据的对比结果表明, 所建立模型能准确反映应变SiGe pMOSFET器件的栅电容特性, 验证了模型的正确性. 该理论为Si基应变金属氧化物半导体(MOS)器件的设计制造提供了重要的指导作用, 并已成功应用于Si基应变器件模型参数提取软件中, 为Si基应变MOS的仿真奠定了理论基础.
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关键词:
- 应变SiGe pMOSFET /
- 栅电容特性 /
- 台阶效应 /
- 沟道掺杂
The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the "plateau" which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.-
Keywords:
- strained SiGe pMOSFET /
- gate C-V characteristics /
- plateau /
- channel doping
[1] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057013]
[2] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 53 4314]
[3] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11] Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12] Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13] Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 60 077102]
[14] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 60 058502]
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[1] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 62 057013]
[2] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 53 4314]
[3] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11] Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12] Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13] Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 60 077102]
[14] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 60 058502]
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