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研究了金属有机化学气相沉积设备生长条件对AlN 薄膜质量的影响. 应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、 载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响. 实验结果表明, 随着氮化时间减小, 缓冲层生长时间增加, 载气流量减少, AlN薄膜的侧向生长和岛的合并能力增强, 面内晶粒尺寸增大, 从而晶体质量也变好.
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关键词:
- AlN /
- Williamson-Hall /
- 面内晶粒尺寸
In this paper, we investigate the effect of growth conditions on the quality of AlN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AlN buffer layer and the flow rate of carrier gas, on the lateral grain size of AlN film. It is found that the redution of nitridation time, the increase of growth time of AlN buffer layer, and the reduction of the flow rate of carrier gas can enhance the lateral growth of AlN film and coalescence of islands and increase the lateral grain size of AlN film. So the quality of AlN film is improved.-
Keywords:
- AlN /
- Williamson-Hall /
- lateral grain size
[1] Kung P, McClintock R, Vizcaino J L P, Minder K, Bayram C, Razeghi M 2007 Quantum Sensing and Nanophotonic Devices III 6479 J4791
[2] McClintock R, Pau J L, Minder K, Bayram C, Kung P, Razeghi M 2007 Appl. Phys. Lett. 90 141112
[3] Pau J L, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Munoz E, Silversmith D 2007 Appl. Phys. Lett. 91 041104
[4] McClintock R, Pau J L, Bayram C, Fain B, Giedraitis P, Razeghi M 2009 Proc. SPIE 7222 72220U
[5] Razeghi M, Bayram C 2009 Proc. SPIE 7366 73661F
[6] Carrano J C, Lambert D J H, Eiting C J, Collins C J, Li T, Wang S, Yang B, Beck A L, Dupuis R D, Campbell J C 2000 Appl. Phys. Lett. 76 924
[7] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽, 赵德刚, 刘宗顺, 朱建军, 张书明, 王玉田, 段俐宏, 刘文宝, 江德生, 杨辉 2009 58 7952]
[8] Williamson G K, Hall W H 1953 Acta Metall. 1 22
[9] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 93 8918
[10] Zhang J C, Zhao D G, Wang J F, Wang Y T, Chen J, Liu J P, Yang H 2004 J. Cryst. Growth 268 24
[11] Xu Z J 2007 Measurement and Analysis of Semiconductor (2nd Ed.) (Beijing:Science Press) p164 (in Chinese) [许振嘉 2007 半导体的检测与分析 (第二版) (北京:科学出版社) 第164页]
[12] Paduano Q S, Weyburne D W, Jasinski J, Liliental-Weber Z 2004 J. Cryst. Growth 261 259
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[1] Kung P, McClintock R, Vizcaino J L P, Minder K, Bayram C, Razeghi M 2007 Quantum Sensing and Nanophotonic Devices III 6479 J4791
[2] McClintock R, Pau J L, Minder K, Bayram C, Kung P, Razeghi M 2007 Appl. Phys. Lett. 90 141112
[3] Pau J L, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Munoz E, Silversmith D 2007 Appl. Phys. Lett. 91 041104
[4] McClintock R, Pau J L, Bayram C, Fain B, Giedraitis P, Razeghi M 2009 Proc. SPIE 7222 72220U
[5] Razeghi M, Bayram C 2009 Proc. SPIE 7366 73661F
[6] Carrano J C, Lambert D J H, Eiting C J, Collins C J, Li T, Wang S, Yang B, Beck A L, Dupuis R D, Campbell J C 2000 Appl. Phys. Lett. 76 924
[7] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽, 赵德刚, 刘宗顺, 朱建军, 张书明, 王玉田, 段俐宏, 刘文宝, 江德生, 杨辉 2009 58 7952]
[8] Williamson G K, Hall W H 1953 Acta Metall. 1 22
[9] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 93 8918
[10] Zhang J C, Zhao D G, Wang J F, Wang Y T, Chen J, Liu J P, Yang H 2004 J. Cryst. Growth 268 24
[11] Xu Z J 2007 Measurement and Analysis of Semiconductor (2nd Ed.) (Beijing:Science Press) p164 (in Chinese) [许振嘉 2007 半导体的检测与分析 (第二版) (北京:科学出版社) 第164页]
[12] Paduano Q S, Weyburne D W, Jasinski J, Liliental-Weber Z 2004 J. Cryst. Growth 261 259
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