新型Si3N4层部分固定正电荷AlGaN/GaN HEMTs器件耐压分析

段宝兴; 杨银堂; Kevin J. Chen

doi:10.7498/aps.61.247302

摘要

为了优化传统AlGaN/GaN high electron mobility transistors结构表面电场分布, 提高器件击穿电压和可靠性, 本文利用不影响AlGaN/GaN异质结极化效应的Si3N4钝化层电荷分布, 提出了一种Si3N4钝化层部分固定正电荷AlGaN/GaN high electron mobility transistors新结构. Si3N4钝化层中部分固定正电荷通过电场调制效应使表面电场分布中产生新的电场峰而趋于均匀. 新电场峰使得新结构栅边缘和漏端高电场有效降低, 器件击穿电压从传统结构的296 V提高到新结构的650 V, 而且可靠性改善. 通过Si3N4与AlGaN界面横、纵向电场分布, 说明了产生表面电场峰的电场调制效应, 为设计Si3N4层部分固定正电荷新结构提供了科学依据. Si3N4钝化层部分固定正电荷的补偿作用, 使沟道二维电子气浓度增加, 导通电阻减小, 输出电流提高.

关键词:

Abstract

In order to optimize the surface electric field of the traditional AlGaN/GaN high electron mobility transistor and improve the breakdown voltage and reliability, a new AlGaN/GaN high electron mobility transistor is proposed with the partial fixed positive charges in the Si3N4 passivation layer in this paper. The partial fixed positive charges of the Si3N4 passivation layer do not affect the polarization effect of the AlGaN/GaN heterojunction. The surface electric field tends to the uniform distribution due to the new electric field peak formed by the partial fixed positive charges, which modulates the surface electric field by applying the electric field modulation effect. The high electric fields near the gate and drain electrode decrease due to the new electric field peak. The breakdown voltage is improved from the 296V for the traditional structure to the 650V for the new structure proposed. The reliability of the device is improved due to the uniform surface electric field. The effect of the electric field modulation is explained by the horizontal and vertical electric field distribution between the Si3N4 and AlGaN interface, which provides a scientific basis for designing the new structure with the partial fixed positive charges in the Si3N4 layer. Because of the fixed positive charge compensation, the two-dimensional electron gas concentration increases, and the on-resistance decreases. So, the output current of the new structure increases compared with that of the traditional AlGaN/GaN High Electron Mobility Transistor.

Keywords:

作者及机构信息

1.
西安电子科技大学, 微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071;

2.
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong

基金项目: 国家自然科学基金重点项目(批准号: 61234006)和国家自然科学基金青年科学基金(批准号: 61106076, 61006052)资助的课题.

Authors and contacts

1.
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

2.
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

Funds: Project supported by the State Key Program of National Natural Science of China (Grant No. 61234006), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61106076, 61006052).

参考文献

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[2]	Anderson T J, Ren F, Covert L, Lin J, Pearton S J, Dalrymple T W, Bozada C, Fitch R C, Moser N, Bedford R G, Schimpf M 2006 J. Electronic Materials 35 675
[3]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 J. Appl. Phys. 130 093529
[4]	Aubry R, Jacquet J C, Dessertenne B, Chartier E, Adam D, Cordier Y, Semond E, Massies J, Diforte M A, Romann A, Delage S L 2003 Eur. Phys. J. AP 22 77
[5]	Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[6]	Shreepad K, Michael S S, Grigory S 2005 Transactions on Electron Devices 52 2534
[7]	Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Transactions on Electron Devices 52 106
[8]	Duan B X, Yang Y T 2012 Micro & Nano Lett. 7 9
[9]	Duan B X, Yang Y T 2012 Sci China Inf. Sci. 55 473
[10]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201-1
[11]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[12]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[13]	Duan B X, Yang Y T 2011 IEEE Transactions on Electron Devices 58 2057
[14]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[15]	Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[16]	Zhang Y F, Singh J 1999 J. Appl. Phys. 85 587
[17]	Marso M, Bernat J, Javorka P, Kordos P 2004 Appl. Phys. Lett. 85 2928
[18]	Polyakov V M, Schwierz F 2005 J. Appl. Phys. 98 023709
[19]	Wang W F, Derluyn J 2006 Japanese J. Appl. Phys. 45 L224
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Solid State Electronics 51 130
[21]	Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[22]	Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan S C 2001 Appl. Phys. Lett. 78 757
[23]	Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth 251 481
[24]	Subramaniam A, Takashi E, Lawrence S, Hiroyasu I 2006 Japanese J. Appl. Phys. 45 L220
[25]	Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Lett. 10 H46
[26]	Duan B X,Yang Y T, Kevin J C 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]

施引文献

[1]	Chu R M, Zhou Y G, Liu J, Wang D L, Chen K J, Lau K M 2005 IEEE Transactions on Electron Devices 52 438
[2]	Anderson T J, Ren F, Covert L, Lin J, Pearton S J, Dalrymple T W, Bozada C, Fitch R C, Moser N, Bedford R G, Schimpf M 2006 J. Electronic Materials 35 675
[3]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 J. Appl. Phys. 130 093529
[4]	Aubry R, Jacquet J C, Dessertenne B, Chartier E, Adam D, Cordier Y, Semond E, Massies J, Diforte M A, Romann A, Delage S L 2003 Eur. Phys. J. AP 22 77
[5]	Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[6]	Shreepad K, Michael S S, Grigory S 2005 Transactions on Electron Devices 52 2534
[7]	Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Transactions on Electron Devices 52 106
[8]	Duan B X, Yang Y T 2012 Micro & Nano Lett. 7 9
[9]	Duan B X, Yang Y T 2012 Sci China Inf. Sci. 55 473
[10]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201-1
[11]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[12]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[13]	Duan B X, Yang Y T 2011 IEEE Transactions on Electron Devices 58 2057
[14]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[15]	Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[16]	Zhang Y F, Singh J 1999 J. Appl. Phys. 85 587
[17]	Marso M, Bernat J, Javorka P, Kordos P 2004 Appl. Phys. Lett. 85 2928
[18]	Polyakov V M, Schwierz F 2005 J. Appl. Phys. 98 023709
[19]	Wang W F, Derluyn J 2006 Japanese J. Appl. Phys. 45 L224
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Solid State Electronics 51 130
[21]	Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[22]	Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan S C 2001 Appl. Phys. Lett. 78 757
[23]	Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth 251 481
[24]	Subramaniam A, Takashi E, Lawrence S, Hiroyasu I 2006 Japanese J. Appl. Phys. 45 L220
[25]	Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Lett. 10 H46
[26]	Duan B X,Yang Y T, Kevin J C 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]

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