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从模拟和实验两个方面对高迁移率In0.6Ga0.4As沟道金属氧化物半导体高电子迁移率晶体管(MOSHEMT)和金属氧化物半导体场效应晶体管(MOSFET)器件开展研究工作. 研究发现InAlAs势垒层对In0.6Ga0.4As MOSHEMT的特性具有重要影响. 与In0.6Ga0.4As MOSFET相比, In0.6Ga0.4As MOSHEMT表现出优异的电学特性. 实验结果表明, In0.6Ga0.4As MOSHEMT的有效沟道迁移率达到2812 cm2/V·s-1, 是In0.6Ga0.4As MOSFET的3.2倍. 0.02 mm栅长的MOSHEMT器件较相同栅长的MOSFET器件具有更高的驱动电流、更大的跨导峰值、更大的开关比、更高的击穿电压和更小的亚阈值摆幅.
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关键词:
- 金属氧化 物半导体高电子迁移率晶体管 /
- 金属氧化 物半导体场效应晶体管 /
- InGaAs /
- Al2O3
High-mobility In0.6Ga0.4As channel metal oxide semiconductor high electron mobility transistor (MOSHEMT) and metal oxide semiconductor field effect transistor (MOSFET) are investigated based on simulation and experiment in this paper. It is found that InAlAs barrier layer has a great influence on the characteristics of In0.6Ga0.4As MOSHEMT. In0.6Ga0.4As MOSHEMT exhibits excellent electrical characteristics compared with In0.6Ga0.4As MOSFET. The experimental results show that the effective channel mobility of MOSHEMT is 2812 cm2/V·s-1, which is 3.2 times that of MOSFET. A 0.02 mm gate length MOSHEMT shows higher drive current, peak transconductance, Ion/Ioff ratio and gate breakdown voltage and lower sub-threshold swing than the MOSFET with the same gate length.[1] Wu Y Q, Wang W K, Koybasi O, Zakharov D N, Stach E A, Nakahara S, Hwang J C M, Ye P D 2009 IEEE Electron Dev. Lett. 30 700
[2] Goel N, Majhi P, Chui C O, Tsai W 2006 Appl. Phys. Lett. 89 163517
[3] Morassi L, Padovani A, Verzellesi G, Veksler D, Ok I, Bersuker G 2011 IEEE Trans. Electron Dev. 58 107
[4] Yonai Y, Kanazawa T, Ikeda S, Miyamoto Y 2011 Tech. Dig. Int. Electron Devices Meet. Washington, US, Dec 3-7, 2011 p307
[5] Waldron N, Kim D H, Alamo J A D 2010 IEEE Trans. Electron Dev. 57 297
[6] Xue F, Jiang A, Zhao H, Chen Y T, Wang Y Z, Zhou F, Lee J 2012 IEEE Electron Dev. Lett. 33 32
[7] Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩,郝跃,岳远征 2008 57 1886]
[8] Lin H, Yang T, Sharifi H, Kim S, Xuan Y, Shen T, Mohammadi S, Ye P D 2007 Appl. Phys. Lett. 91 212101
[9] Zhou X, Tang C W, Li Q, Lau K M 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[10] Koomen J 1973 Solid-St. Electron. 16 801
[11] Morassi L, Verzellesi G, Larcher L, Zhao H, Lee J C 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[12] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE Trans. Electron Dev. 41 2357
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[1] Wu Y Q, Wang W K, Koybasi O, Zakharov D N, Stach E A, Nakahara S, Hwang J C M, Ye P D 2009 IEEE Electron Dev. Lett. 30 700
[2] Goel N, Majhi P, Chui C O, Tsai W 2006 Appl. Phys. Lett. 89 163517
[3] Morassi L, Padovani A, Verzellesi G, Veksler D, Ok I, Bersuker G 2011 IEEE Trans. Electron Dev. 58 107
[4] Yonai Y, Kanazawa T, Ikeda S, Miyamoto Y 2011 Tech. Dig. Int. Electron Devices Meet. Washington, US, Dec 3-7, 2011 p307
[5] Waldron N, Kim D H, Alamo J A D 2010 IEEE Trans. Electron Dev. 57 297
[6] Xue F, Jiang A, Zhao H, Chen Y T, Wang Y Z, Zhou F, Lee J 2012 IEEE Electron Dev. Lett. 33 32
[7] Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩,郝跃,岳远征 2008 57 1886]
[8] Lin H, Yang T, Sharifi H, Kim S, Xuan Y, Shen T, Mohammadi S, Ye P D 2007 Appl. Phys. Lett. 91 212101
[9] Zhou X, Tang C W, Li Q, Lau K M 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[10] Koomen J 1973 Solid-St. Electron. 16 801
[11] Morassi L, Verzellesi G, Larcher L, Zhao H, Lee J C 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[12] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE Trans. Electron Dev. 41 2357
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